United Microelectronics Corp.

Kuo-Cheng Chou

Cheng-Hsiao Lai

Ying-Ting Lin

Yung-Tsai Hsu

Ming-Jen Chang

Cheng-Chieh Cheng

Ming-Shan Ho

Chung-Yi Luo

A memory sector with trimmed reference currents, including eight unit cells corresponding to an even word line and eight unit cells corresponding to an odd word line, and each unit cell has erased state and programmed state, wherein the logic state of unit cell corresponding to the odd word line is determined by a first reference current based on cell currents of the 8 unit cells corresponding to the even word line in programmed state and cell currents of the eight unit cells corresponding to the odd word line in erased state, and the logic state of unit cell corresponding to the even word line is determined by a second reference current based on cell currents of the eight unit cells corresponding to the even word line in erased state and cell currents of the 8 unit cells corresponding to the odd word line in programmed state.

Memory sector with trimmed reference currents and method of improving memory reading window thereof

Growing community of inventors

Hsinchu County, Taiwan

Kuo-Cheng Chou