Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Kuo Chang Chiang

Sheng-Chih Lai

Yu-Wei Jiang

Hung-Chang Sun

TsuChing Yang

Feng-Cheng Yang

Neil Quinn Murray

Ching Yu Chang

Chi Wen Liu

Tsuching Yang

A method of forming a three-dimensional (3D) memory device includes: forming, over a substrate, a layer stack having alternating layers of a first conductive material and a first dielectric material; forming trenches extending vertically through the layer stack from an upper surface of the layer stack distal from the substrate to a lower surface of the layer stack facing the substrate; lining sidewalls and bottoms of the trenches with a memory film; forming a channel material over the memory film, the channel material including an amorphous material; filling the trenches with a second dielectric material after forming the channel material; forming memory cell isolation regions in the second dielectric material; forming source lines (SLs) and bit lines (BLs) that extend vertically in the second dielectric material on opposing sides of the memory cell isolation regions; and crystallizing first portions of the channel material after forming the SLs and BLs.

Three-dimensional memory device and method

A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a layer stack over a substrate, where the layer stack includes alternating layers of a first dielectric material and a word line (WL) material; forming first trenches extending vertically through the layer stack; filling the first trenches, where filling the first trenches includes forming, in the first trenches, a ferroelectric material, a channel material over the ferroelectric material, and a second dielectric material over the channel material; after filling the first trenches, forming second trenches extending vertically through the layer stack, the second trenches being interleaved with the first trenches; and filling the second trenches, where filling the second trenches includes forming, in the second trenches, the ferroelectric material, the channel material over the ferroelectric material, and the second dielectric material over the channel material.

Three-dimensional ferroelectric random access memory devices and methods of forming

A transistor including a channel layer including an oxide semiconductor material and methods of making the same. The transistor includes a channel layer having a first oxide semiconductor layer having a first oxygen concentration, a second oxide semiconductor layer having a second oxygen concentration and a third oxide semiconductor layer having a third oxygen concentration. The second oxide semiconductor layer is located between the first semiconductor oxide layer and the third oxide semiconductor layer. The second oxygen concentration is lower than the first oxygen concentration and the third oxygen concentration.

Oxide semiconductor transistor structure in 3-D device and methods of forming the same

The invention introduces a method for preventing or detecting computer attacks in a cloud-based environment, performed by a processing unit of an apparatus, which contains at least the following steps. A first IP (Internet Protocol) packet is received from a client system through the Internet. A service request is acquired from the first IP packet, which requests service to a protected computer asset. It is determined whether the service request contains a computer attack. An attack prevention/detection operation is performed to prevent an attack from damaging the protected computer asset when the service request contains a computer attack.

Methods for preventing or detecting computer attacks in a cloud-based environment and apparatuses using the same

A portable device can transmit information through one of a mobile phone network and an Internet, wherein the portable device includes a text-based communication module to allow a user may synchronously transmit or receive data through a local area network, wherein the data is text, audio, video or the combination thereof. The text-based communication module of the portable device includes a text-to-speech recognition module used to convert a text data for outputting the text data by vocal, and a read determination module for determining read target terminals and unread target terminals when a user of the portable phone device activates the read determination module.

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Hsinchu, Taiwan

Kuo Chang Chiang