Samsung Electronics Co., Ltd.

Semes Co., Ltd.

Cornell University

Imec

Kuntack Lee

Hyosan Lee

Jihoon Jeong

Young-Hoo Kim

Sangjine Park

Yongsun Ko

Yong-Jhin Cho

Jung-Min Oh

Younghoo Kim

Kyoungseob Kim

Yongmyung Jun

Byoungho Kwon

Seohyun Kim

Sang Won Bae

Yonghee Lee

Sunghyun Park

Sukhoon Kim

Boun Yoon

Jihwan Park

Taemin Earmme

Hae-Won Choi

Ingi Kim

Donghyun Kim

Youngseok Kim

Christopher Kemper Ober

Seokhoon Kim

SeokHoon Kim

Yungjun Kim

Seungmin Shin

Kyoung Hwan Kim

Kwangsu Kim

Mihyun Park

Hongjin Kim

Youngok Kim

Seungchul Han

Taehong Kim

Bo Yun Kim

Imsoo Park

Sol Han

Seungho Kim

Hunjae Jang

Daehyuk Kang

Sungoh Park

Ui-soon Park

Minkyu Park

Kihoon Choi

Hayoung Jeon

Jaeseong Lee

Anton Koriakin

Jeongnam Han

Ji Hoon Cha

Chawon Koh

Wonho Jang

Changki Hong

Keonyoung Kim

Beomseok Kim

Soo Young Choi

Frank Holsteyns

Junyeong Lee

Kwangwook Lee

Jihoon Cha

Kihong Cho

Kyongseob Kim

Yongjhin Cho

Sungho Shin

Hyunjoon Park

Insun Yi

Chen Lin

A substrate processing method includes supplying a first developer at a first temperature onto a substrate in a development device, thereby performing a development process, supplying a process fluid at a second temperature lower than the first temperature onto the substrate, thereby replacing a residue of the first developer remaining after the development process with a second developer, transferring the substrate from the development device to a supercritical drying device, and supplying, by the supercritical drying device, at least one of a supercritical fluid and a subcritical fluid onto the substrate, thereby drying the second developer.

Substrate processing method using low temperature developer and semiconductor device manufacturing apparatus using the same

A wafer drying apparatus is disclosed. The wafer drying apparatus may include a drying chamber housing providing a drying space, in which a wafer is disposed, a supercritical fluid supplying part configured to supply a supercritical fluid into the drying space, a wafer heating part configured to heat the wafer disposed in the drying space, and a wafer cooling part configured to cool the wafer disposed in the drying space. The wafer cooling part may include a cooling plate disposed below a place, on which the wafer is loaded, and a cooling conduit inserted in the cooling plate.

Wafer drying apparatus, wafer processing system including the same, and wafer processing method using the same

A substrate processing apparatus including a processing container including a processing space, a substrate support extending in a first direction and a second direction perpendicular to the second direction, and configured to support a substrate in the processing container, a fluid supply device configured to supply a processing fluid in a supercritical state to the processing space through a container supply pipe, and a shower head assembly configured to diffuse the processing fluid supplied from the fluid supply device into the processing space. The shower head assembly includes a first shower head having a first diameter, and a second shower head arranged between the first shower head and the substrate and having a second diameter. The processing container is separated from the shower head assembly in a third direction perpendicular to the first direction and the second direction, such that a flow path is formed between the processing container and the shower head assembly.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

Substrate processing apparatus, semiconductor manufacturing equipment, and substrate processing method

Provided is a substrate drying apparatus. The substrate drying apparatus may include an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space, a lower chamber body including an outlet configured to discharge the supercritical fluid outside the chamber space, and a stage configured to be loaded with a wet substrate and arranged in the chamber space, wherein the upper chamber body and the lower chamber body are configured such that the chamber space is closed by bringing the upper chamber body into contact with the lower chamber body, and the chamber space is opened by separating the upper chamber body from the lower chamber body, and the stage comprises a heater configured to heat the substrate and the supercritical fluid.

Apparatus and method for drying substrate

A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

Substrate transferring unit, substrate processing apparatus, and substrate processing method

A substrate heating apparatus includes: a plurality of heating lamps disposed on a chuck stage; a window disposed on the chuck stage and including a window base and a central lens, wherein the chuck stage and the window are each configured to support a substrate above the heating lamps; and a mirror disposed between the heating lamps and the chuck stage, the mirror including a mirror base, a central reflector, and an edge reflector, wherein the plurality of heating lamps are configured to heat the substrate by emitting light through the window onto the substrate and emitting light onto the mirror, wherein the mirror is configured to reflect the light through the window onto the substrate, including reflecting portions of the light via the central and edge reflectors, and wherein the central lens is configured to focus the light onto the central portion of the substrate.

Substrate heating apparatus and method for processing a substrate

An apparatus for drying a wafer, includes: a drying chamber; a supercritical fluid supply module configured to supply supercritical fluid to the drying chamber; a main exhaust line connected to the drying chamber and in which a main valve is installed; and an auxiliary exhaust unit connected to the main exhaust line. The auxiliary exhaust unit includes: an auxiliary exhaust line connected to the main exhaust line and configured to exhaust the supercritical fluid from the drying chamber when the main valve is closed; a negative pressure tank installed in the auxiliary exhaust line; a first valve, installed in the auxiliary exhaust line, that is configured to be opened when the main valve is closed; and a second valve, installed in the auxiliary exhaust line, that is configured to be opened in conjunction with the first valve.

Apparatus for drying wafer and method for drying wafer

A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

Substrate processing method and substrate processing system

A substrate processing method includes providing a surface tension reducing agent as a gas onto a substrate, the substrate having an exposed photoresist layer and layer of developer on the exposed photoresist layer, and causing a bulk flow of the developer in order to remove the developer from the substrate.

Substrate processing method, micropattern forming method, and substrate processing apparatus

A conditioner of a chemical mechanical polishing (CMP) apparatus includes a disk to polish a polishing pad of the CMP apparatus, a driver to rotate the disk, a lifter to lift the driver, an arm to rotate the lifter, and a connector to connect the driver to the lifter, the driver being tiltable with respect to the lifter.

Conditioner, chemical mechanical polishing apparatus including the same and method of manufacturing a semiconductor device using the apparatus

An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.

Apparatus for processing a substrate

A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.

Apparatus including light source supplying light to wafer and window protector receiving a portion of chemical liquid

Growing community of inventors

Suwon-si, South Korea

Kuntack Lee