Sychip Inc.

Murata Manufacturing Co., Ltd.

Kunquan Sun

Yinon Degani

Charley Chunlei Gao

Yanbing Yu

Yu Fan

Yujie Zhu

Liguo Sun

Liquo Sun

Anthony M Chiu

Chao Wang

Jian Cheng

Meng Zhao

Maureen Lau

Feng Mo

Kangzheng Wang

Joe Ryan

Yinchao Chen

Tatsuo Rao Bizen

Wei Liu

Moses Asom

A method for testing characteristics of a communication device that includes a plurality of modules using a test fixture includes the steps of connecting the communication device to the test fixture, determining if tests to be performed on the plurality of modules can be simultaneously performed, performing the tests to be performed on the plurality of modules for any tests that are determined can be simultaneously performed, calculating a numerical value for each of the plurality of modules if it is determined that the tests to be performed cannot be simultaneously performed, selecting one of the tests based on the calculated numerical value, and performing the selected one of the tests based on the calculated numerical value and suspending the test or tests on the remaining modules of the plurality of modules other than the selected one of the tests.

Multi-radio test method and test fixture

A flip-bonded dual-substrate inductor includes a base substrate, a first inductor body portion provided on a surface of the base substrate, a cover substrate, a second inductor body portion provided on a surface of a cover substrate, and a nanoparticle bonding material provided between the base substrate surface and the cover substrate surface to electrically connect the first inductor body portion and the second inductor body portion. A method for fabricating a flip-bonded dual-substrate inductor including forming a first inductor body portion on a surface of a base substrate, forming a second inductor body portion on a surface of a cover substrate, and attaching the base substrate surface to the cover substrate surface using a nanoparticle bonding material that electrically connects the first inductor body portion and the second inductor body portion.

Flip-bonded dual-substrate inductor, flip-bonded dual-substrate inductor, and integrated passive device including a flip-bonded dual-substrate inductor

The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.

Integrated passive device substrates

Balun transformers are described wherein multiple transformer loops are implemented in a stacked design with the primary and secondary loops overlying one another. By aligning the loops in a vertical direction, instead of offsetting the loops, the area of the device is reduced. Multiple transformer loops are nested on each level, and the transformer loops on a given level are connected together using a crossover located on a different level.

Compact balun transformers

The specification describes a multi-chip module (MCM) that contains an integrated passive device (IPD) as the carrier substrate (IPD MCM). Parasitic electrical interactions are controlled at one or both interfaces of the IPD either by eliminating metal from the interfaces, or by selective use of metal in parts of the MCM that are remote from the sensitive device components. The sensitive device components are primarily analog circuit components, especially RF inductor elements. In the IPD layout, the sensitive components are segregated from other components. This allows implementation of the selective metal approach. It also allows parasitic interactions on top of the IPD substrate to be reduced by selective placement of IC semiconductor chips and IC chip ground planes. In preferred embodiments of the IPD MCM of the invention, the IPD substrate is polysilicon, to further minimize RF interactions. The various methods of assembling the module may be adapted to keep the overall thickness within 1.0 mm.

Integrated passive devices

The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.

Integrated passive devices with high Q inductors

Multi-media Memory Card (MMC) devices, Secure Digital (SD) devices, and Secure Digital Input Output (SDIO) devices connected to a single host controller with signals multiplexed to allow simultaneous activation of more than one device at a time.

Sharing single host controller with multiple functional devices

The specification describes SDIO devices and SDIO cards wherein the SDIO devices are provided with enhanced functionality, and the SDIO cards are provided with enhanced IC capacity. A variety of multi-chip-module (MCM) approaches are used to increase the IC capacity of the SDIO card.

Growing community of inventors

Plano, TX, United States of America

Kunquan Sun