Boe Technology Group Co., Ltd.

Chongqing Boe Optoelectronics Technology Co., Ltd.

Kunkun Gao

Chao Zhang

Xu Wu

Zhonghao Huang

Hongru Zhou

Zhaojun Wang

Zhiyong Ning

Can Wang

Rui Wang

Kai Wang

Maokun Tian

Xiaonan Dong

Yutong Yang

A half via hole structure, a method for manufacturing the same, an array substrate, and a display panel are provided. The half via hole structure includes: a spacer layer arranged on an underlaying substrate; a passivation layer arranged on the spacer layer and provided with a first via hole, an orthographic projection of the first via hole on the underlaying substrate being within that of the spacer layer on the underlaying substrate; a first conductive layer arranged on the spacer layer and having a width smaller than a diameter of the first via hole; an insulating layer arranged between the spacer layer and the passivation layer and provided with a second via hole; and a second conductive layer arranged on the passivation layer and overlapped with the first conductive layer through the first via hole.

Half via hole structure, manufacturing method thereof, array substrate, and display panel

A shift register, a gate drive circuit, and a display panel are provided. The shift register includes an input sub-circuit configured to pre-charge a pull-up node using an input signal; an output sub-circuit configured to output a clock signal through an signal output terminal; a pull-down control sub-circuit configured to control a potential of a pull-down node using a power supply voltage signal; a first pull-down sub-circuit configured to pull down a potential of the pull-down node using a first preset voltage signal; and a first control sub-circuit configured to control the potential of the pull-up node using a second preset voltage signal in response to the potential of the pull-down node; a potential of the first preset voltage signal is lower than a potential of a non-operating level signal of the first pull-down sub-circuit, but higher than a potential of the second preset voltage signal.

Shift register, gate drive circuit and display panel

There is provided a thin film transistor including: a substrate; a gate electrode and a first electrode in a single layer on the substrate; an active layer above the first electrode, an orthographic projection of the active layer on the substrate at least partially covers an orthographic projection of the first electrode on the substrate; a first insulation layer covering the gate electrode, the first electrode, the active layer, a portion of the substrate exposed between the gate electrode and the active layer, and another portion of the substrate exposed between the gate electrode and the first electrode; and a second electrode above the first insulation layer, an orthographic projection of the second electrode on the substrate at least partially covers the orthographic projection of the active layer on the substrate, and the second electrode is connected to the active layer through a via-hole in the first insulation layer.

Thin film transistor and method for manufacturing the same, display panel and method for manufacturing the same

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Beijing, China

Kunkun Gao