Hitachi, Ltd.

Hitachi Vlsi Engineering Corp.

Kunizo Sahara

Kanji Otsuka

Shigeo Kuroda

Takashi Nakao

Hisashi Nakamura

Masao Kawamura

Toshiyuki Sakuta

Ikuo Yoshida

Kazuya Ito

Akiomi Kohno

Masaya Horino

Hideaki Kamohara

Makoto Homma

Hiroshi Akasaki

Masanori Tazunoki

Yoshiaki Emoto

Hinoko Kurosawa

Toshihiko Satoh

Minoru Enomoto

Hiromitsu Mishimagi

Masayuki Iketani

Koichiro Sekiguchi

Shouichi Irie

Keiji Sasaki

Takeo Yamada

Mitsuo Usami

Takayuki Okinaga

Masao Kato

Yuuji Shirai

Seiji Miyamoto

Takashi Kumagai

Hiroshi Tachi

Hisashi Ishida

Kazutoshi Kubo

Masayuki Kawashima

To achieve higher packaging density and one wafer level for a full-sized wafer memory, or wafer-scale integration memory system, the wafers are vertically stacked with each other at a predetermined interval. A packaging technique is improved in such a way that a memory system layout can be precisely realized and a precise through hole can be formed. Moreover, other chips are fixed on the wafer so as to achieve furthermore the high packaging density.

Wafer scale or full wafer memory system, packaging method thereof, and

Wafer scale of full wafer memory system, packaging method thereof, and

A technique for producing a chip mount type package or a TAB package with high reliability, without use of a flux which would cause environmental pollution or would hinder an enhancement of reliability, more particularly pertains to a method of irradiating bonding surfaces, for which a solder is used, and solder bump electrodes of a package with an atomic or ion energy beam, and bonding the bonding surfaces to each other under normal pressure (about 1 atm) in a continuous apparatus.

Method of bonding metals, and method and apparatus for producing

An invention relating to a technique for producing a chip mount type package or a TAB package with high reliability, without use of a flux which would cause environmental pollution or would hinder an enhancement of reliability, and more particularly pertaining to a method of irradiating bonding surfaces, for which a solder is used, and solder bump electrodes of a package with an atomic or ion energy beam and bonding the bonding surfaces to each other under normal pressure (about 1 atm) in a continuous apparatus.

Attempts have been made to increase the number of pins of packages accompanying the trend toward fabricating integrated circuits highly densely and in smaller sizes. The present invention provides technology for improving reliability in fabricating packages of the surface-mounted type that have increased number of pins. That is, when the packages are mounted on the wiring substrate, the lead pins that receive load from the axial direction exhibit bending strength which is smaller than the junction strength of solder at the junction portions. To achieve this object, the lead pins are made of a material having large resiliency such as a fiber-reinforced material, a transformation pseudo elastic material, an ultra-high tension material, or a heat-resistant ultra-high tension material.

Semiconductor device having leads for mounting to a surface of a printed

A semiconductor device having improved heat-dissipating characteristics employs a thin insulator film made of diamond, which has excellent thermal conductivity, as an insulator film which is formed on a chip immediately below a heat-dissipating bump electrode. Since the thin diamond film has excellent insulating properties and high thermal conductivity, it is possible to improve heat-dissipating characteristics of even a high-power semiconductor device such as a multichip module. In the case of, particularly, a multichip module, the insulation between a mother chip and a child chip can also be ensured by the presence of the thin diamond film.

Semiconductor device and process for producing the same

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Nishitama, Japan

Kunizo Sahara