Rohm Co., Ltd.

Other

Kureha Elastomer Co., Ltd.

Kuniyoshi Okamoto

Hiroaki Ohta

Taketoshi Tanaka

Yoshinori Tanaka

Seiki Chiba

Mikio Waki

Kazuya Nagase

Naoaki Tsurumi

Masashi Kubota

Syo Kurita

Nobuhiro Miyagi

Makoto Takasugi

A dielectric elastomer driving mechanism includes a driver, a follower, and a power transmitter. The driver includes a dielectric elastomer driving element made up of a dielectric elastomer layer and two electrode layers sandwiching the dielectric elastomer layer. The driver also includes a tension maintaining element maintaining, in a no-voltage state, the dielectric elastomer driving element in a state in which tension occurs, and includes an output portion capable of moving along with the expanding or contracting of the dielectric elastomer driving element. The follower includes a following element actuating in accordance with a driving force inputted. The power transmitter is connected to the output portion of the driver for transmitting a driving force of the driver to the follower.

Dielectric elastomer driving mechanism

A dielectric elastomer motor includes an artificial muscle and a conversion mechanism cooperating with the artificial muscle. The artificial muscle includes a dielectric elastomer film or layer having a first surface and a second surface opposite to the first surface. First and second electrodes are attached to the first surface and the second surface of the dielectric elastomer film, respectively. First and second bases are attached to the dielectric elastomer so as to be spaced apart from each other. The first base and the second base are capable of reciprocation relative to each other upon change in size of the dielectric elastomer. The conversion mechanism converts the reciprocation of the bases to pivotal or rotational movement. The dielectric elastomer receives voltage application with a predetermined timing via the first and the second electrodes.

Dielectric elastomer motor

Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiringis formed on a supporting substrate. A green LDand a red LDare bonded to the metal wiring. Each of the green LDand the red LDis a laser diode element formed of a semiconductor having a layered structure. One of a positive electrode and a negative electrode of the element is bonded to the metal wiring, and the other electrode is connected to a lead wireor a lead wire. The green LDis formed of a GaN-based semiconductor laser diode having a nonpolar plane or a semipolar plane as a main surface for crystal growth. The red LDis formed of an AlInGaP-based semiconductor laser diode.

Laser light emitting device

The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle &#x3b8; in the c-axis direction preferably satisfies &#x2212;1&#xb0;&#x3c;&#x3b8;&#x3c;0&#xb0;.

Semiconductor light-emitting element and method for fabrication the same

A light-emitting device includes a group III nitride semiconductor layer of a multilayer structure consisting of a group III nitride semiconductor having a major surface defined by a nonpolar plane or a semipolar plane and having at least an n-type layer and a p-type layer. A surface of the group III nitride semiconductor layer on a light extraction side is a mirror surface. The light-emitting device may further include a transparent electrode in contact with the surface of the group III nitride semiconductor layer on the light extraction side. In this case, a surface of the transparent electrode on the light extraction side is preferably a mirror surface.

Light-emitting device

A semiconductor light emitting device has a device body made of a group III nitride semiconductor having a major surface defined by a nonpolar plane. In the device body, a contact portion with an n-type electrode includes a crystal plane different from the major surface. For example, the contact portion may include a corrugated surface. More specifically, the contact portion may include a region having a plurality of protrusions parallel to a polar plane formed in a striped manner.

Semiconductor light emitting device

A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the cavity respectively. In each of the distributed Bragg reflectors, a central wavelength &#x3bb;of a reflectance spectrum satisfies the relation &#x3bb;&#x2212;10 nm&#x2266;&#x3bb;&#x2266;&#x3bb;+10 nm with respect to an emission peak wavelength &#x3bb;of spontaneous emission in the active layer.

Semiconductor laser device

An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing n-type guide layer held between the p-type cladding layer and the n-type cladding layer; and an In-containing light emitting layer held between the p-type guide layer and the n-type guide layer.

Growing community of inventors

Kyoto, Japan

Kuniyoshi Okamoto