Toray Industries, Inc.

Toray Coatex Co., Ltd.

Kuniyasu Shiro

Tetsuo Oka

Shinichi Yamada

Masaru Kurihara

Tadahiro Uemura

Hiroyasu Kato

Yoshio Himeshima

Yukihiro Matsuzaki

Satoshi Yanagisawa

Hajime Nishimura

Tetsuo Watanabe

Hisashi Minamiguchi

Kazuhiko Hashisaka

Masaharu Wada

Tomoyuki Honda

Miyuki Hanamoto

A polishing pad is provided with a compression elastic modulus of 0.17 MPa or more and 0.32 MPa or less produced by preparing a nonwoven fabric formed of bundles of ultrafine fibers with an average monofilament diameter of 3.0 &#x3bc;m or more and 8.0 &#x3bc;m or less, preparing a polishing pad base by impregnating the nonwoven fabric with a polyurethane based elastomer in an amount of 20 mass % or more and 50 mass % or less relative to the mass of the polishing pad base, and laminating the polishing pad base with a porous polyurethane layer containing wet-solidified polyurethane as primary component which has openings with an average opening diameter of 10 &#x3bc;m or more and 90 &#x3bc;m or less in its surface to serve as polishing surface layer.

Polishing pad

A polishing pad forms a planar surface on glass, semiconductors, dielectric material/metal composites and integrated circuits, as well as a polishing apparatus where it is difficult for the surface of the substrate to be scratched, the state of polishing can be accurately measured optically during polishing, and whether or not the entire surface of the workpiece is uniformly polished can be measured. The polishing pad includes a through hole that connects the polishing surface and the rear surface in such a location as to pass through the center of the wafer during polishing, the end of the through hole closer to the center of the polishing pad is at a distance of no less than 35% of the radius from the center of the polishing pad, the length of the through hole in the direction of the center of the polishing pad is the same as or shorter than the length in the direction perpendicular to the direction of the center of the polishing pad, the length of the through hole in the direction of the center of the polishing pad is no more than 10% of the radius, and the length of the through hole in the direction perpendicular to the direction of the center of the polishing pad is no more than 12.5% of the radius.

Polishing pad and polishing apparatus

The present invention relates to a polishing pad which is characterized in that it is of micro rubber A-type hardness at least 80&deg;, has closed cells of average cell diameter no more than 1000 &mgr;m, is of density in the range 0.4 to 1.1 and contains polyurethane and polymer produced from a vinyl compound. When planarizing local unevenness on a semiconductor substrate with the polishing pad relating to the present invention, the polishing rate is high, the global step height is low, dishing does not readily occur at the metallic interconnects, clogging and permanent set of the surface layer region do not readily occur and the polishing rate is stable.

Polishing pad and polishing device

Composite membrane

A gas separation membrane with excellent gas separation properties is disclosed. The gas separation membrane is substantially free from pinholes and consists essentially of a crosslinked polyolefin or a crosslinked polyarylene oxide. This gas separation membrane is produced by evaporating a solution containing a polyolefin or a polyarylene oxide having an active functional group which can form crosslinking site therebetween or which can react with a crosslinking agent to form a crosslinking site.

Gas separation membrane

Growing community of inventors

Shiga, Japan

Kuniyasu Shiro