Tokyo Electron Limited

Fujikin Inc.

Kuniyasu Sakashita

Hiroki Iriuda

Michio Yamaji

Shigeru Nakajima

Tsuneyuki Okabe

Tsuyoshi Tanikawa

Keisuke Ishibashi

Yoshihiro Takezawa

Takashi Funakoshi

Hidenori Kiso

Reita Igarashi

Satoru Ogawa

Hiroaki Kikuchi

A gas nozzle extending vertically inward of an inner wall of a processing container having a substantially cylindrical shape, includes a plurality of first gas holes provided at intervals in a longitudinal direction; and a second gas hole provided at a tip of the gas nozzle and oriented toward a side opposite to a side in which the plurality of first gas holes are provided in a plan view from the longitudinal direction, wherein the second gas hole has an opening area larger than an opening area of each of the first gas holes.

Gas nozzle, substrate processing apparatus, and substrate processing method

A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.

Gas introduction structure and processing apparatus

A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.

Processing apparatus and processing method

A film forming apparatus includes: a substrate holding member for vertically holding target substrates at predetermined intervals in multiple stages; a process vessel for accommodating the substrate holding member; a processing gas introduction member each having gas discharge holes which discharge a processing gas for film formation in a direction parallel to each target substrate and introduce the processing gas into the process vessel; an exhaust mechanism for exhausting the interior of the process vessel; and a plurality of gas flow adjustment members installed to face the target substrates, respectively. Each of the gas flow adjustment members adjusts a gas flow of the processing gas discharged horizontally above each of the target substrates from the gas discharge holes of the processing gas introduction member, to be directed from above the respective target substrate located below the respective gas flow adjustment member toward the surface of the respective target substrate.

Film forming apparatus and film forming method

A first on-off valve () and a second on-off valve () each are a two-port valve. A first passage block () is provided with a first on-off valve-corresponding inflow passage () and a first on-off valve-corresponding outflow passage (). A second passage block () is provided with a second on-off valve-corresponding inflow passage () and a second on-off valve-corresponding outflow passage (). The second on-off valve-corresponding outflow passage () is in communication with an upstream side portion of the first on-off valve-corresponding outflow passage () via a communicating passage () formed in the first passage block (). An orifice () is provided between the second on-off valve-corresponding outflow passage () and the communicating passage ().

Shutoff-opening device

Growing community of inventors

Nirasaki, Japan

Kuniyasu Sakashita