Asm IP Holding B.v.

Asm International N.v.

Asm Japan K.k.

Kunitoshi Namba

Antti Niskanen

Hideaki Fukuda

Ryu Nakano

Suvi P Haukka

Atsuki Fukazawa

Dai Ishikawa

Shang Chen

Noboru Takamure

Takahiro Onuma

Toshiharu Watarai

Viljami J Pore

Jan Willem Maes

Qi Xie

Delphine Longrie

Han Wang

Toshiya Suzuki

Ryoko Yamada

Akira Shimizu

Hiroshi Shinriki

Woo-Jin Lee

Daekyun Jeong

Dieter Pierreux

Bert Jongbloed

Werner Knaepen

Naoki Inoue

Akinori Nakano

Yosuke Kimura

Wataru Adachi

Yuya Nonaka

Kuo-Wei Hong

Richika Kato

Shigeyuki Onizawa

Seiji Okuro

Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyl halide, such as HSiI. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Formation of SiN thin films

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

Methods for forming doped silicon oxide thin films

Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as HSiI. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

Reaction chamber passivation and selective deposition of metallic films

Selective deposition of metallic films

A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Method for protecting layer by forming hydrocarbon-based extremely thin film

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Tokyo, Japan

Kunitoshi Namba