Screen Holdings Co., Ltd.

Kunio Yamada

Takashi Ota

Noriyuki Kikumoto

Tomomi Iwata

Hiromichi Kaba

Toru Edo

Kazuki Inoue

Akihiko Taki

Tetsuo Ito

Taiki Hinode

Masayuki Hayashi

Kazuhide Saito

Tomoaki Aihara

Jiro Okuda

A substrate processing apparatus includes a substrate holder, a processing liquid supplying unit with a liquid nozzle discharging a processing liquid to an upper surface of the substrate. A moving unit moves the supplying unit between a process position at which the liquid nozzle faces the upper surface of the substrate and a retreat position. The supplying unit includes a first flow path in the processing liquid nozzle. The first flow path has one end part and the other end part that face a central region of the substrate and a peripheral region of the substrate, respectively, in a state where the supplying unit is positioned at the process position. It has a second flow path that supplies the processing liquid to the one end part, and a plurality of discharge ports in the processing liquid nozzle that are arranged along the first flow path direction and discharge the processing liquid in the first flow path to the substrate's upper surface.

Substrate processing apparatus

In a substrate processing apparatus, a transport robot which transports a substrate between an indexer part and a substrate processing part is installed in a substrate transport part. The transport fan filter unit is provided in an upper part of the substrate transport part. An exhaust port is provided in the substrate transport part. The circulation piping allows the exhaust port of the substrate transport part and the transport fan filter unit to communicate with each other. The exhaust pipe is connected to the circulation piping. The inert gas supply part supplies an inert gas to the circulation piping. The circulation fan filter unit is disposed downstream of a connecting portion of the circulation piping with the exhaust pipe to be parallel to a flow path of the circulation piping.

A substrate processing device is provided. A chamber has a side wall part and a top wall part and contains a substrate holding part. A first gas supply part is disposed in the top wall part and supplies a first gas toward a side on which the substrate holding part is positioned. A second gas supply part is contained in the chamber and supplies a second gas to an inside of the chamber. A control unit controls the first and second gas supply part. The second gas is a gas different from oxygen and an allotrope of oxygen. The second gas supply part has an air feeding port part which is positioned on an upward side of a holding position of a substrate by the substrate holding part in a vertical direction and is positioned on an outward side of the substrate holding part in a horizontal direction.

Substrate processing device and substrate processing method

A substrate processing apparatus includes a driving magnet that is disposed correspondingly to a movable pin and that has a predetermined polar direction with respect to a radial direction of a rotary table, a pressing magnet that has a magnetic pole that gives an attractive magnetic force or a repulsive magnetic force between the driving magnet and the pressing magnet and that presses a support portion against a peripheral edge of a substrate by urging the support portion toward a contact position by means of the attractive magnetic force or the repulsive magnetic force, and a pressing-force changing unit that changes a magnitude of a pressing force against the peripheral edge of the substrate pressed by the support portion while keeping the magnitude higher than zero in response to rotation of the rotary table.

In a substrate processing apparatus, a phosphoric acid aqueous solution is supplied to a processor, and a liquid collection from the processor is concurrently performed. Further, a silicon concentration is adjusted, to supply an adjusted processing liquid to the processor. Thus, a phosphoric acid aqueous solution film is formed on the substrate. The liquid film is heated by a heating device. The heating device has lamp heaters in a casing made of a silica glass. The phosphoric acid aqueous solution on the substrate is irradiated with infrared rays. A nitrogen gas flowing in a gas passage formed in the casing is discharged towards a position outside an outer periphery of the substrate.

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Kyoto, Japan

Kunio Yamada