Other

Konica Minolta, Inc.

Renesas Electronics Corporation

Renesas Technology Corp.

Konica Minolta Medical and Graphic, Inc.

Kunio Tani

Tomohisa Iba

Hiroyuki Kimura

Toshihiro Sezaki

Makoto Yamamoto

Tsutomu Tanaka

Katsunobu Hongo

Kiyohiko Sakakibara

Susumu Takeuchi

Tetsu Tashiro

Mikio Kamiya

Yukio Nakamoto

Satoru Inoue

Hiroshi Nishimura

Eisaku Katoh

Yasushi Okubo

Shinya Otsu

Rie Katakura

Kunimasa Hiyama

Hiroto Ito

Masashi Miyano

Ryo Aoyama

Yasuhiro Ami

Tomomi Sugai

Ai Katsuda

Tomoe Kawanami

A resin composition includes a resin or a resin precursor, and a nitrogen-containing aromatic heterocyclic compound. The nitrogen-containing aromatic heterocyclic compound has a structure represented by the following general formula (1), the following general formula (6) or the following general formula (7): In the general formula (1), A1 and A2 each represent a 6-membered nitrogen-containing aromatic heterocyclic ring together with a nitrogen atom, and the 6-membered nitrogen-containing aromatic heterocyclic ring optionally forms a fused ring; and L represents a single bond, or a linking group derived from an aromatic hydrocarbon ring, an aromatic heterocyclic ring, or an alkyl group. The resin composition includes the nitrogen-containing aromatic heterocyclic compound in a range from 0.10 to 30% by mass relative to the resin or the resin precursor.

Resin composition and electronic device

When a control circuit has received a first erase command, the control circuit controls performing a first pre-write process to allow a first storage device and a second storage device to have threshold voltages, respectively, both increased, and the control circuit thereafter controls performing an erase process to allow the first storage device and the second storage device to have their respective threshold voltages both decreased to be smaller than a prescribed erase verify level. When the control circuit has received a second erase command, the control circuit controls performing a second pre-write process to allow one of the first storage device and the second storage device to have its threshold voltage increased, and control circuit subsequently controls performing the erase process.

Semiconductor device, pre-write program, and restoration program

An organic electroluminescent element includes a hole injection layer (HI), a first hole transport layer (HT1), a second hole transport layer (HT2), and a light-emitting layer containing a host compound (H) and a phosphorescence emitting dopant compound (D), which are laminated in this order, between and an anode and a cathode. The phosphorescence emitting dopant compound has a partial structure represented by Formula (1):  The 'highest occupied molecular orbital' HOMO of the second hole transport layer satisfies the expression: &#x2212;5.4&#x3c;HOMO (HT2)&#x3c;&#x2212;4.8; and the relationship of triplet excitation energies (T1) between the phosphorescence emitting dopant compound and a hole transport material contained in the second hole transport layer satisfies the expression: T1 (HT2)&#x2212;T1 (D)&#x3e;0.1.

Organic electroluminescent element

Disclosed is an organic photoelectric conversion element which has a reverse layer structure wherein at least a first electrode, a photoelectric conversion layer and a second electrode are arranged on a substrate in this order. The organic photoelectric conversion element is characterized in that: the photoelectric conversion layer is a bulk heterojunction layer that is composed of a p-type organic semiconductor material and an n-type organic semiconductor material; and a compound that has a linear or branched fluorinated alkyl group having 6-20 carbon atoms is contained as the p-type organic semiconductor material.

Organic photoelectric conversion element and solar cell using same

The purpose of the present invention is to provide: an organic electroluminescence element having a plurality of light-emitting dopants of different light-emitting wavelengths and emitting white light, the white-light-emitting organic electroluminescence element having excellent longevity, low-voltage driving, and chromatic stability, and also having a few dark spots; as well as an illumination device and a display device that use the element. This organic electroluminescence element contains at least one light-emitting layer sandwiched between a positive electrode and a negative electrode, the organic electroluminescence element characterized in that the light-emitting layer contribution ratio, defined as the ratio &#x394;PL/&#x394;EL of the photoluminescence intensity decay rate to the electroluminescence intensity decay rate, is 0.3 to 1.0.

Organic electroluminescence element, illumination device, and display device

An objective is to provide a planographic printing plate material exhibiting excellent developability, printing durability, together with excellent oxygen-shielding layer adhesion and moisture dependence after exposure. Disclosed is a planographic printing plate material possessing a support provided thereon, a photosensitive layer, wherein the photosensitive layer comprises (A) at least two binder polymers comprising different glass transition points (Tg) from each other, (B) a polymerizable ethylenic double bond-containing compound, and (C) a photopolymerization initiator.

Planographic printing plate material

A microcomputer with a built-in non-volatile semiconductor memory, which can automatically perform a work of temporarily interrupting automatic writing or automatic erase and accepting an interruption process when an interruption occurs during the automatic writing or automatic erase by using an interrupt request signal for a microcomputer as an external input for controlling automatic writing or automatic erase of a flash memory.

Microcomputer having a flush memory that can be temporarily interrupted during an erase process

A microcomputer comprises: a flash memory for storing rewriting control F/W and user S/F; a command register for specifying content of rewriting control; a address register to be subjected to rewriting-control; a data register for specifying data to be written; a power-supply pump circuit in the flash memory; and a control signal register for specifying/outputting a control signal to a memory decoder. A CPU of the microcomputer is capable of accessing these four registers to perform writing or reading. A given bit of the control signal register corresponds to a given control signal. A value written to the register becomes a control signal that will be directly supplied to both of the power supply circuit and the memory decoder, in the flash memory, to control them. By rewriting a set value of this control signal register using the rewriting control F/W according to a specified sequence, processing such as &ldquo;erase&rdquo; and &ldquo;program&rdquo; of the flash memory is performed. As a result, a layout area of an automatic sequence circuit is decreased, and a change in a sequence is also facilitated.

Microcomputer with built-in programmable nonvolatile memory

A nonvolatile semiconductor memory device selects a bit line while a word line is in a non-selected state, and self-selectively writes back only a cell in an overerased state on the selected bit line. The nonvolatile semiconductor memory device performs this write-back operation after completion of erase verification. At this time, current sensitivity of a sense current amplifier defining the threshold of a memory cell is set in view of an off-state leakage current of a memory cell transistor.

Nonvolatile semiconductor memory device capable of suppressing reduction of bit line potential in write-back operation and erase method

A nonvolatile semiconductor memory includes a memory block composed of a memory array having a plurality of memory cells arranged in a matrix form, each of the memory cells being composed of a nonvolatile transistor; a memory decoder necessary for erasing/writing/reading data of the nonvolatile transistor in the memory array; a charge pump necessary for erasing/writing/reading the data of the nonvolatile transistor in the memory array; a register having each of a plurality of control signals for controlling the memory decoder and the charge pump allocated to register 1 bit; and an updating device for updating a content of the register by a data processor coupled to the register. By using this updating device to update the content of the register, the memory decoder and the charge pump are controlled, the data of the memory block is erased, and data is written in/read from the nonvolatile transistor. Thus a selecting device other than a laser can be applied for suppressing the increase of an LSI circuit size in the same chip as that for a dedicated control circuit, verifying the disconnected state of a FUSE circuit in the memory, and trimming the FUSE circuit.

Nonvolatile semiconductor memory and automatic erasing/writing method thereof

Growing community of inventors

Tokyo, Japan

Kunio Tani