Sanyo Electric Co., Ltd.

Kunio Takeuchi

Yasuhiko Nomura

Masayuki Hata

Ryoji Hiroyama

Daijiro Inoue

Yasumitsu Kunoh

Shigeyuki Okamoto

Seiichi Tokunaga

Nobuhiko Hayashi

Yasuyuki Bessho

Takashi Kano

Tsutomu Yamaguchi

Hiroki Ohbo

Kiyoshi Oota

Koutarou Furusawa

Shingo Kameyama

Koji Tominaga

Kouji Tominaga

Noriaki Matsuoka

Ryouji Hiroyama

Such a semiconductor light-emitting device () that emitted light has small directivity of light intensity and a color tone and a light output is hardly reduced is obtained. This semiconductor light-emitting device includes a semiconductor light-emitting element () and a thin-film light diffusion portion () arranged on a light-emitting direction side of the semiconductor light-emitting element.

Semiconductor light-emitting device

A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus

A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farther from the ridge portion and holding the groove between the support portion and the ridge portion and a support substrate bonded to the semiconductor laser diode portion through a fusion layer, wherein the fusion layer is formed so as to be embedded in the groove, a space from the ridge portion to the support substrate and a space from the support portion to the support substrate.

Semiconductor laser diode element and method of manufacturing the same

A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (), a first bonding layer () formed on the support substrate (), a second bonding layer () formed on the first bonding layer (), a third bonding layer () formed on the second bonding layer (), and a semiconductor element layer () formed on the third bonding layer (). The melting point of the second bonding layer () is lower than the melting points of the first bonding layer () and the third bonding layer ().

Semiconductor light-emitting device, illuminator and method of manufacturing semiconductor light-emitting device

A semiconductor laser device capable of improving planarity of cleavage planes of an optical waveguide thereof is obtained. This semiconductor laser device includes a support substrate, a semiconductor laser element portion having a pair of cavity facets provided with ends of an optical waveguide extending in a first direction and a bonding layer bonding the support substrate and the semiconductor laser element portion to each other, while the bonding layer has void portions formed on regions close to at least the ends of the optical waveguide in the vicinity of the cavity facets.

Semiconductor laser device and method of manufacturing the same

A method of manufacturing a nitride semiconductor device includes the steps of; forming a stripping layer including In on a substrate; forming a nitride semiconductor layer on the stripping layer; causing a decomposition of the stripping layer by increasing a temperature of the stripping layer; irradiating the stripping layer with laser light; and separating the nitride semiconductor layer from the substrate.

Method of manufacturing nitride semiconductor device

A principal surface at one side of a support substrate has thereon an adjustment layer made of material having a higher thermal expansion coefficient than that of the support substrate. Then, a nitride-base semiconductor element layer and the support substrate on a growth substrate are joined via an adhesion layer. Next, the support substrate is joined to the nitride-base semiconductor element layer via the adhesion layer. Next, the growth substrate is separated from the joined nitride-base semiconductor element layer and the support substrate.

Method for manufacturing nitride-base semiconductor element and nitride-base semiconductor element

A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

Semiconductor laser device and method of fabricating the same

A semiconductor laser device is characterized in that an angle &#x3b8; of inclination formed by the side surfaces of a ridge portion and a lower part of the ridge portion is at least 70&#xb0; and not more than 117&#xb0;, a p-type cladding layer is made of AlGaAs, a first current blocking layer is made of AlGaAs, the distance between an emission layer and the first current blocking layer satisfies the relation of t&#x2266;0.275/(1&#x2212;(X2&#x2212;X1)) assuming that t represents the distance, and a lower width W of the ridge portion is at least 2 &#x3bc;m and not more than 5 &#x3bc;m.

A semiconductor laser device having a real refractive index guided structure capable of obtaining a high kink light output and a high maximum light output also when a vertical beam divergence angle is at a small level of at least 12.5&deg; and not more than 20.0&deg; is provided. This semiconductor laser device comprises an n-type cladding layer of AlGaInP formed on an n-type GaAs substrate, an active layer having an AlGaInP layer formed on the n-type cladding layer, a p-type cladding layer of AlGaInP formed on the active layer and a light confinement layer formed to partially cover the p-type cladding layer, and a vertical beam divergence angle is at least 12.5&deg; and not more than 20.0&deg;. Thus, a higher kink light output and a higher maximum light output can be obtained as compared with a conventional semiconductor laser device having a vertical beam divergence angle exceeding 20.0&deg;.

AlGaInP-based high-output red semiconductor laser device

A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer.

A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.

Semiconductor laser device

An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.

Semiconductor laser device and manufacturing method thereof

A nitride-based semiconductor light-emitting device capable of attaining homogeneous emission with a low driving voltage is obtained. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an emission layer, consisting of a nitride-based semiconductor, formed on the first nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the emission layer, a second conductivity type intermediate layer, consisting of a nitride-based semiconductor, formed on the second nitride-based semiconductor layer, a second conductivity type contact layer, including a nitride-based semiconductor layer having a smaller band gap than gallium nitride, formed on the intermediate layer, and a light-transmitting electrode formed on the contact layer. Thus, a carrier concentration and electric conductivity higher than those of a contact layer (nitride-based semiconductor layer) consisting of gallium nitride is obtained.

Nitride-based semiconductor light-emitting device

The present invention provides an electrode making good ohmic contact with an n-type nitride semiconductor without requiring heat treatment at high temperature, wherein an aluminum layer, a silicon layer, a nickel layer and a gold layer are laminated in this order on an n-type gallium nitride based semiconductor, to form an n-type electrode.

Growing community of inventors

Joyo, Japan

Kunio Takeuchi