Semiconductor Energy Laboratory Co., Ltd.

Toyota Jidosha Kabushiki Kaisha

Toyo Hakko Co., Ltd.

Kunio Suzuki

Mikio Kinka

Masayoshi Abe

Takeshi Fukada

Masato Susukida

Katsuhiko Shibata

Shunpei Yamazaki

Susumu Nagayama

Ippei Kobayashi

Kaoru Koyanagi

Takashi Inujima

Akemi Satake

Yasuyuki Arai

Kazuo Nishi

Noriya Ishida

Shuichi Kugawa

Shumpei Yamazaki

Hisato Shinohara

Hideaki Bunazawa

Keisuke Ninomiya

Tadashi Nagashima

Yoshitaka Tomiyama

Shinya Nagahashi

A first relative frequency distribution in original data is calculated for each of feature amounts. Data segments are cut out from the original data using time windows. A second relative frequency in extracted data is calculated for each of the feature amounts. An error between the first relative frequency distribution and the second relative frequency distribution is calculated. A trial from determination of a setting of time windows to calculation of the error is repeatedly executed while changing the setting of the time windows. One or more settings of the time windows in which the error is less than a threshold value are selected and output.

Information processing method

An object of the present invention is to provide a process according to which 5-ene-3-one or 3,6-dione derivatives of sterols can be synthesized with a better yield, as well as a process for production of lipid metabolism improvers, foods, drinks, and animal feeds containing the 5-ene-3-one or 3,6-dione derivatives of sterols. The process for production of 5-ene-3-one or 3,6-dione derivatives of sterols of the present invention involves preparing a culturing solution containing anbacterium, which is a microorganism exhibiting a cholesterol oxidase activity, and then, adding to the culturing solution an equivalent amount of hexane so as to prepare a bilayer solution consisting of an aqueous layer and a hydrocarbon-based solvent layer. Thereafter, sterol, or a derivative thereof, is made as a substrate contained therein, a reaction performed with cholesterol oxidase at 30&#xb0; C. for 2 days, and, ethanol then added to separate a hydrocarbon-based solvent layer. Thereafter, the layer is dried to a state of dryness by means of a vacuum dryer so as to obtain 5-ene-3-one or 3,6-dione derivatives.

Process for production of 5-ene-3-one or 3,6-dione derivatives of sterols, processes for production of lipid metabolism improvers, foods, drinks, and animal feeds, and analytical method

An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.

Method for photo annealing non-single crystalline semiconductor films

An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for provessing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result even if transparent electrode is provided on the semiconductor layer.

Method for manufacturing a semiconductor device free from electrical

A portable electric appliance is provided with a solar energy accumulator. The accumulator is integrally mounted on the electric appliance when the appliance is desired to operate or be transported. When the portable electric appliance is not used, the accumulator is removed from the appliance and moved to a bright place.

Accumulator for portable computers

A solar cell comprises a plurality of series connected photoelectric conversion structures formed on a substrate. The conversion structure consists of a first semiconductor film on a P-type, an intrinsic semiconductor film formed on the first semiconductor film such that one end thereof extends beyond an end of the first semiconductor film and a second semiconductor film of a second, opposite conductivity type formed on the intrinsic semiconductor film such that one end thereof extends beyond the extended end of the intrinsic semiconductor film and makes direct electrical contact with an end of the first semiconductor film of the adjacent structure.

Photoelectric conversion device

An improved method for manufacturing uniform films or etching uniformly on a plurality of substrates is shown. The substrates are vertically placed in a reaction chamber so as to be treated at once. A chemical vapor reaction takes place by virtue of a high frequency electric power which is modulated in its amplitude. By this modulation, the deposition or etching can be carried out over the surface of a susbtrate.

Chemical vapor processing method for deposition or etching on a

An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

Semiconductor manufacturing device

An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.

Semiconductor device free from the current leakage through a

An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

An improved tandem photoelectric conversion device is shown. The device comprises at least two photoelectric conversion semiconductor assemblies. The assembly located behind the other has higher crystallinity then the other, so that light with a long wavelength passing through the front assembly be converted into electricity at the back assembly. In the device, an intrinsic semiconductor layer is formed by an ECR CVD system.

Tandem photoelectric conversion device

An improved sputtering system for depositing film on a substrate is disclosed. The system comprises a vacuum chamber, a pair of electrodes with a target inbetween, a cart on which a plurality of substrates are mounted and a transportation mechanism for transporting the cart passing through the deposition space between the electrodes. The substrates are mounted perpendicular to the electric field induced by the pair of electrodes.

Sputtering system for deposition on parallel substrates

An improved semiconductor processing is disclosed. In the manufacturing process, fluorine gas is introduced just after formation of semiconductor layer in a reaction. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

Semiconductor manufacturing method and device

An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.

Growing community of inventors

Tokyo, Japan

Kunio Suzuki