Nippon Telegraph and Telephone Corporation

Nippon Telephone and Telegraph Corporation

Kunio Saito

Katsuyuki Machida

Tadao Nagatsuma

Hakaru Kyuragi

Hiromu Ishii

Yoshinobu Arita

Takao Amazawa

Shouji Yagi

In a pattern forming method, a trench is formed on a flat base. A pattern material is arranged only in and around the trench so as to project upward from the surface of the base and to be larger than the opening of the trench. The pattern material projecting from the surface of the base is removed by chemical mechanical polishing (CMP) so as to be flush with the upper surface of the base.

Pattern forming method

A selected chemical vapor deposition method includes the steps of arranging a substrate having a silicon surface and an insulator surface in a reaction chamber, supplying a gas consisting of a silicon hydride in said reaction chamber to reduce and remove a native oxide film on said silicon surface by said gas, and supplying a source gas in said reaction chamber to selectively form a film on only said silicon surface.

Selective chemical vapor deposition of a metallic film on the silicon

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Kanagawa, Japan

Kunio Saito