Amp LLC

Nec Corporation

Fuji Photo Film Company, Limited

Kunio Nakamura

Minoru Abe

Izumi Hasegawa

Kazuto Kunita

Ippei Nakamura

Takashi Kamono

Tatsuo Nakamura

Yukinori Kuroki

The present invention is an image recording material characterized in that it contains (a) a compound that is decomposed by light or heat and produces an acid, (b) a crosslinking agent that crosslinks in the presence of an acid, (c) a high-polymer compound insoluble in water but soluble in an alkali aqueous solution, and (d) the anionic infrared absorbing agent expressed by general formula (I) or general formula (II) below. In the formulas, M represents a conjugated chain, G represents an anionic substituent, G represents a neutral substituent, X represents a hydrogen ion or a cation of m valence, and m represents an integer from 1 to 6.

Image recording material and planographic printing plate using same

A semiconductor memory includes at least one memory cell composed of an insulated gate field effect transistor and an associated stacked capacitor which are formed close to each other on a single substrate of a first conduction type. The insulated gate field effect transistor has a source and a drain which are located separately from each other in the single substrate and formed of impurity regions of a second conduction type opposite to the first conduction type. The insulated gate field effect transistor also has a gate formed through a gate insulator on a region between the source and the drain. The gate and the source of the insulated gate field effect transistor are connected to a word line and a bit line, respectively, and the drain of the insulated gate field effect transistor is connected to a first electrode of the stacked capacitor. The memory cell also comprises a first impurity region of the first conduction type formed in the substrate below the stacked capacitor, and a second impurity region of the second conduction type which is formed above the first impurity region in the substrate below the stacked capacitor and which has a junction depth shallower than the depth of the first impurity region, so that a pn junction is formed between the first impurity region and the second impurity region. The second impurity region is connected to the first electrode of the stacked capacitor. With this arrangement, the memory cell has a cell capacitance of based on a sum of a capacitance of the stacked capacitor and a junction capacitance of the pn junction.

Method of manufacturing a semiconductor memory having an increased cell

A plug connector assembly (1) includes a housing (2) adapted to receive multiple connectors (9) inserted therein carrying cables (8) with a cover (3) having mating halves (3a, 3b) which latch together onto the housing, locking the connectors in place. The housing includes a resilient arm (4) operable to latch the assembly to a mating connector. The cover (3) includes a further resilient arm (3b) operable to depress the housing resilient arm to disengage the assembly from the mated connector.

Plug connector assembly

A cable connector (10,10') for holding a cable (2) against axial movement is disclosed. The connector 10,10') includes a housing (4) and a clamping member (6,7,8,9). The cable (2) passes through the housing (4) in an opening (40) which is intersected normally by slots (41) into which the clamping member (6,7,8,9) is inserted to receive the cable (2) in recesses (62,72,82,92) defined by pairs of legs (61,71,81,91) of the clamping member (6,7,8,9).

Cable connector

An end-processing device for an optical fiber (42) comprises a housing (3, 4) having a receiving recess (10) extending from a front wall (23) to the other end, an aperture (14) located in the front wall (23), a heat conductive plate member (15) mounted on a front surface of the housing (3), pushing means (17, 22) mounted on the optical fiber (42) and in the receiving recess (10) for pushing the optical fiber end toward the heat conductive plate member (15), a reference surface (16) at the front wall (23) to regulate the final movement of the optical fiber (42), the plate member (15) being selectively coupled to a heating means (30) for processing the end of the optical fiber.

Holder for optical fiber end-processing device

A machine for connecting an end of an optical fiber cable (1) to an optical fiber connector (2) comprises a stripping mechanism (10) that strips an end of a jacket (1b) from an end of the optical fiber cable (1) to expose an end of a fiber core (1a), a connector-connecting mechanism (30) which inserts the stripped end of the optical fiber cable (1) into a hole (2a) in the optical fiber connector (2) and connects the cable (1) with the connector (2), a core-cutting mechanism (60) which cuts the length of the fiber core (1a) protruding from the front end of the connector (2) leaving a tiny length of protruding fiber core (1a), and a core-finishing mechanism (70) which finishes the end surface of the protruding tiny length of fiber core (1a).

Machine for connecting an end of an optical fiber cable to an optical

A dynamic memory device of one-transistor memory cell type is disclosed. A thick insulating layer is formed on the transistor and an aperture is provided in the thick insulating layer to reach the source or drain region of the transistor. A MOS type storage capacitor is formed within the aperture and above the upper surface of the insulating layer such that the capacitance of the capacitor within the aperture becomes larger than the capacitance of the capacitor above the upper surface of the insulating layer.

Semiconductor memory device

An apparatus for processing the end portion of a shielded cable comprises at least one cable-holding means for holding the shielded cable, a transport means for moving the cable-holding means through various stations, the shielded cable being removed of a predetermined length of its outer insulation jacket beforehand and being clamped in the cable-holding means at a first station such that the exposed portion thereof projects forward compressed air means provided opposite the position at which the exposed portion of the shielded cable stops at the second station for blowing air onto exposed shielding wires so as to separate them into upper and lower rows, a wire-bending means provided opposite the position at which the exposed portion of the shielded cable stops at the third station for straightening and aligning the shielding wires separated by the compressed means and bending the same back over the cable-holding means, and a wire-cutting means provided opposite the position at which the exposed portion of the shielded cable stops at the fourth station for cutting the shielding wires bent back over the cable-holding means.

Shielded cable, an apparatus for and method of preparing an end thereof

A semiconductor memory cell of a single field effect transistor and a single capacitor is surrounded or delimited at its three sides in the plan view by grooves formed in a semiconductor substrate. The capacitor in each memory cell is formed on one side wall surface or both side wall surfaces of this groove. With such construction, an increase in a capacitance can be achieved and a degree of circuit integration can be enhanced in distinction from the case where a groove is provided within an active region, that is, within a plan region of a capacitor section.

Growing community of inventors

Tokyo, Japan

Kunio Nakamura