Hitachi, Ltd.

Nitto-denko Corporation

Hitachi Chemical Company, Ltd.

Kunio Miyazaki

Osamu Miura

Ryuji Watanabe

Shunichi Numata

Jin Onuki

Yasushi Koubuchi

Tatsuo Itagaki

Akio Takahashi

Kazuji Yamada

Hisanori Okamura

Toshio Miyamoto

Masayasu Nihei

Yukio Ookoshi

Hideo Suzuki

Yuichi Satsu

Takao Miwa

Satoru Ogihara

Shinichi Fukada

Hitoshi Suzuki

Hirokazu Inoue

Takeshi Tsukamoto

Masato Koshiishi

Hirosi Akiyama

Mutuo Kamoshita

Yukio Okoshi

Amane Mochizuki

Akira Tanaka

Takashi Yokoyama

Yutaka Sugita

Akio Mukoh

Hiroshi Watanabe

Ken Takahashi

Shinichi Itoh

Tadahiko Miyoshi

Takahiko Kato

Motoyo Wajima

Kanji Otsuka

Tasao Soga

Fumiyuki Kobayashi

Masahisa Inagaki

Jun Sugiura

Hiroshi Yokoyama

Shigeru Takahashi

Koji Fujisaki

Shigeo Amagi

Yoshiyuki Tsuru

Kousuke Nakamura

Kazumasa Igarashi

Izumi Ochiai

Jiro Kuniya

Atsushi Morihara

Michio Ohue

Hideo Arakawa

Osamu Asai

Hiroichi Shinohara

Akio Chiba

Tomio Iizuka

Masayoshi Kanno

Satoshi Kokura

Yoshio Naganuma

Takeo Tamamura

Tomio Yasuda

Akira Kumagai

Katsuhiko Shiota

Katsunori Ouchi

Takayoshi Ikeda

Hisae Shimanoki

Takeshi Obana

Mikio Aizawa

Motoo Suwa

Tomomi Shiraki

Yukio Okosi

Katuhiko Shiota

Genji Taki

In a joining method for manufacturing a rotor blade by joining a plurality of members, the members are pressed so as to exert a predetermined pressure on the bonding interface. A pulse voltage is applied to the members to pass electric current therethrough, and the joint portion is heated by resistance heating generated at the bonding interface and in the bulk of the members to cause diffusion bonding and thereby to join the members to each other. With this method, good joining can be achieved without substantially changing the crystal structure and mechanical properties of the base metals.

Method for manufacturing turbine blade and manufactured turbine blade

Provided are an underwater processing apparatus which can effectively prevent water from entering a shield for a workpiece having a surface ruggedness, and in which variation in a gas flow for a processing part is reduced, a processing method and an application thereof to a nuclear reactor, and the under water processing device is composed of a shield means which locally cover the processing part with the gas in order to prevent water from entering the shield member, the shield means having a solid wall formed of a member which is slidable in a part where it make contact with the workpiece, and adapted to make contact with the workpiece and to be moved up and down by a pressing force, and a water jetting means for forming a water curtain around the outer periphery of the solid wall.

Underwater processing device and underwater processing method

A wear resistant material containing no cobalt is used for a sliding portion of a control rod driving mechanism of a nuclear plant for reducing the exposure dose due to elution of cobalt and ensuring smooth driving of a control rod under a high load for a long time. A control rod driving mechanism employs a roller and a pin, each of which is made of a wear resisting alloy comprising coarse particles of a hard phase, having a particle size of from 20 to 100 .mu.m, and dispersed in a soft matrix made of an iron-based or nickel-based alloy containing chromium and having a hardness of 300 Hv or less. A nuclear reactor employs this control rod driving mechanism.

Wear resisting sintered alloy and its production, and control rod

A multi-layer wiring structure for mounting electronic devices is provided to be used in an electronic computer, a work station or the like, and more particularly a multi-layer packaging board having microscopic wiring layers, which board has an excellent dimensional stability and a high reliability, and also a method of producing such a board are provided. The multi-layer wiring structure includes a complex of at least two sub-assemblies each having wiring layers formed respectively on opposite sides of a core material of a low thermal expansive metal through an insulation layer in such a manner that the wiring layers correspond in area ratio to each other. The sub-assemblies are connected to one another by conductors via through holes. In this structure, the wiring structure having the core material of a low thermal expansive metal is used as a base, and therefore a dimensional change of a board is small, and microscopic wiring layers can be formed, and the reliability of connection between the sub-assemblies is enhanced. Furthermore, the board can be produced at low costs.

Multi-layer wiring structure

A multi-layer wiring assembly including a stack of insulating layers, e.g. of polyimide, alternating with wiring patterns, typically of copper. To establish the circuit pattern, successive wiring patterns are connected to one another through the intervening insulating layers at predetermined locations, by metal stud connections. The studs are formed during assembly of the stack by wire-bonding a stud onto an underlying wiring pattern through a through-hole of the insulating layer above, and then stamping the exposed end of the wire-bonded stud to spread it into contact with the uppermost wiring pattern. The wire-bonded studs e.g. of Au, form strong bonds with the underlying conductor and are quick to apply in an automated process using a wire-bonding machine.

Method of making electrical connections in the manufacture of wiring

An LSI mounting substrate having a multilayered thin film wiring portion, with the thin film wiring portion being divided into wiring units each composed of a plurality of wiring layers, with the wirings between the units being electrically connected through connecting pads defined in the same surface as that of a surface conductive layer of the unit.

Mounting substrate

A composite of metal and an organic film having a high adhesiveness without deterioration of film quality is provided by exposing the surface of organic film to at least one of chemically reactive gas phase molecules and gas phase ions thereby forming functional groups on the surface of organic film, and forming a metallic film thereon through the functional groups.

Metal-organic macromolecular synthetic resin composite and process for

A thin film forming method and apparatus, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make Ar ions flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to maintain a stable discharge and perform reverse sputter in a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. An aluminum wiring film whose peak value of x-ray diffraction strength at a (111) plane is 150 Kcps or more is possible. Also, a barrier layer having a layered structure of granular and columnar crystals or a mixed structure thereof providing an efficient barrier effect and a large specific resistance is possible.

Method of and apparatus for sputtering, and integrated circuit device

The present invention provides a process for producing a metal-polyimide composite material such as a wiring board. In production thereof, deterioration of polyamide film due to oxidation during imidization of a polyimide precursor in contact with metal such as copper or silver can be prevented. The present invention is characterized by using a polyimide precursor having an acidic functional group which is masked. Examples of the polyamide precursor are polyamic acid epoxy adducts, amido polyamic acids, silylated polyamic acids, etc.

Process for producing metal-polyimide composite article

The present invention provides a process for producing a metal/polyimide composite article such as high-density wiring boards. This metal/polyimide composite article is produced by a method which comprises coating a polyamic acid alkyl ester represented by the following formula on a metallic film and curing it: ##STR1## wherein R.sub.1 and R.sub.2 which may be identical or different each represents an organic group of 1 or more carbon atoms.

Process for producing metal/polyimide composite article

A semiconductor package for use in computers includes a insulating substrate onto which a semiconductor device is mounted, an insulating cap which shuts out outside air and seals said semiconductor device, power-source lines which provide power to the semiconductor device, and signal lines which transmit output signals from the semiconductor device to external circuits. The signal lines are arranged perpendicularly to the insulating substrate so that they are prevented from the dielectric constant of the insulating substrate, while the power-source lines are formed within the insulating substrate and connected through conductive layers parallel to the surface onto which the semiconductor is mounted to external leads.

Semiconductor package and computer using the package

A semiconductor device having a high reliability wiring conductor structure applicable to DRAMs and SRAMs. The semiconductor device of the present invention is characterized by comprising a first wiring conductor film wherein a specific resistance is 5.about.15.mu..OMEGA.cm and an allowable current density is 1.times.10.sup.6 .about.1.times.10.sup.8 A/cm.sup.2 ; a second wiring conductor film having a laminated layer structure formed of a layer of high fusing point and low resistance material and a layer of an Al based alloy; and a plug composed of a high fusing point and low resistance material, electrically connecting to the first wiring conductor film and the second wiring conductor film. Thus, a semiconductor device showing almost no increase in electrical resistance in a wiring conductor film due to electromigration even after subjecting to a large current is provided.

Semiconductor device and method for manufacturing the same

A semiconductor device and the method of fabricating the semiconductor device include a semiconductor substrate and a plurality of conductor films formed on the substrate. Each of the conductor films is made of aluminum alloy including at least one element selected from palladium and platinum and, more preferably, further including at least one element selected from lithium, beryllium, magnesium, manganese, iron, cobalt, nickel, copper, lanthanum, cerium, chromium hafnium, zirconium, cadmium, titanium, tungsten, vanadium, tantalum, and niobium, with a protective film which includes oxide of the selected one of palladium and platinum being formed on the side wall of the conductor film.

Semiconductor device and method of fabricating the same

A thin film forming method and apparatus is provided, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make a fraction of Ar ions to flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to hold stable discharge and reverse sputter at a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. A film whose peak value of x-ray diffraction strength in the (111) plane is 150 Xcps or more is possible. Also, a barrier layer with a layered structure of granular and columnar crystals or a mixed structure thereof and hence with an efficient barrier effect and a large specific resistance is possible.

Method of and apparatus for sputtering

A semiconductor chip module includes semiconductor chips each of which has contacts on its entire front face. A multi-layered organic circuit board having a small dielectric constant is provided for mounting the semiconductor chips. Intermediate ceramic substrates having the same thermal expansion coefficient as that of the semiconductor chip, are also provided. Each such intermediate ceramic substrate has contacts on its front and back faces corresponding to those of the semiconductor chip. These contacts are electrically connected directly in a one-to-one relationship. The contacts on the semiconductor chip and the corresponding ones on the front face of the intermediate ceramic substrates are connected by solder. The contacts on the back face of the intermediate ceramic substrate and the corresponding contacts on the front face of the multi-layered ceramic circuit board are connected by respective conductive pins having a predetermined flexibility and rigidity through a predetermined gap therebetween. With this arrangement, the relative displacement due to a thermal expansion difference between the intermediate ceramic substrate and the multi-layered organic circuit board is permitted without causing substantial stress thereon.

Semiconductor chip module

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Hitachi, Japan

Kunio Miyazaki