Sony Corporation

Director-general of Agency of Industrial Science and Technology

Chiyoda Corporation

Kunio Kaneko

Hiroji Kawai

Ichiro Hase

Yoshifumi Mori

Chiaki Kojima

Munekazu Nakamura

Noriyuki Yoneda

Shunji Imanaga

Hidehiko Kudoh

Hiroyuki Nagasawa

Norio Iwamoto

Hideto Ishikawa

Syunji Imanaga

Naozo Watanabe

A method for vapor deposition includes monitoring of growth of a semiconductor layer by way of in-situ monitoring. According to the invention, in-situ monitoring is performed by irradiating a light beam onto the surface of the growing layer in a direction nearly perpendicular to the surface. Growth parameters of the layer are detected by monitoring variation of the light reflected by the surface of the layer. A growth condition in a vapor deposition chamber is feedback controlled based on the detected growth parameter.

Method and apparatus for vapor deposition

A method and apparatus for the combustion treatment of a toxic gas which forms microparticles by combustion are disclosed wherein the toxic gas is subjected to a combustion treatment in a specific combustion furnace where the combustion gas formed is brought into contact with an aqueous film flowing downwards on the inner wall of the furnace from the upper end portion thereof to the lower end portion thereof or with a cooled surface, and then optionally with aqueous droplets dispersed in the interior space of the furnace. The water captures the microparticles formed by combustion of the toxic gas and is discharged out of the furnace as a mixed flow with the combustion gas thus treated, and optionally the mixed flow is successively treated in a gas-liquid separator.

Method for the combustion treatment of toxic gas-containing waste gas

A III-V semiconductor device is disclosed, which includes an emitter region, an emitter barrier region having such a barrier height as to substantially restrict a thermionic emission current as compared with a tunneling current and such a barrier width as to permit the tunneling current, a base region containing indium and having higher electron affinity than said emitter region and a collector barrier region having such a barrier height as to substantially prohibit a thermally distributed electron from overflowing and such a barrier width as to substantially prohibit the tunneling current.

Semiconductor device

A green light emitting diode of gallium phosphide having an epitaxial layer consisting of P and N type layer portions. A donor concentration in the N type layer, an acceptor concentration gradient in the P type layer and nitrogen concentration near the pn junction are selected respectively at predetermined values.

Green light emitting diode

Growing community of inventors

Yokohama, Japan

Kunio Kaneko