Fuji Photo Film Company, Limited

Semitex Co., Ltd.

Kunio Iba

Tadashi Miyakawa

Tateo Kusama

Masahiro Inoda

According to the present invention, the image input apparatus is adapted to sample the image signal read by the linear image sensor by means of the sampling means in order to output image data. The object of the present invention is accomplished by a provision of image input apparatus comprising a memory provided with positional data previously stored therein of defective elements of the image sensor corresponding to respective picture elements of a linear image sensor and a sampling control means for preventing, when the difference value between the adjacent pictures of an image signal is less than the predetermined one, a sampling means from carrying out sampling at the present picture element corresponding to said defective element of the image sensor in accordance with said memory and outputting image data of the sampling signal of the adjacent previous picture element, and for allowing sampling, when said difference value is more than the predetermined value, at the present picture element according to said defective element of the image sensor in compliance with said memory and outputting the image data of the sampling signal of the adjacent present picture elements as they are.

Defect-collecting image input apparatus with image sensor

A method and apparatus measure the lifetime of a semiconductor material by directing microwave energy into the semiconductor material and by producing carriers within the semiconductor material by impinging light thereon. A non-metal material is interposed between the semiconductor material and a metallic surface, such that a portion of the microwave energy travels through the semiconductor material and the non-metal material and reflects off of the metallic surface and back through the non-metal material and the semiconductor material. Additionally, a heating member is provided for heating the semiconductor material, whereby the lifetime of the semiconductor material is determined according to characteristics of the reflected microwave energy and the temperature of the semiconductor material.

Method for measuring lifetime of semiconductor material and apparatus

According to this invention, since black regions are provided along the advancing direction on an original plate, the dark-time output levels of the linear sensor would not be affected by dust adhered on the original plate or the presence of trimming lines. Since a calibration region is provided, the circuit system can be calibrated with the maximum and minimum values of the signals from the linear sensor to thereby achieve more precise reading of images.

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Tokyo, Japan

Kunio Iba