Shindengen Electric Manufacturing Company Limited

Kunihito Oshima

Toshiyuki Takemori

Yuji Watanabe

Masato Itoi

Fuminori Sasaoka

Kazushige Matsuyama

A trench gate power MOSFET () includes: an n-type epitaxial layer (); a p-type body region () formed in the vicinity of an upper surface of the n-type epitaxial layer (); a plurality of trenches () formed so as to reach the n-type epitaxial layer () from an upper surface of the p-type body region (); and gates () formed in the trenches (). In some regions facing the p-type body region () in the n-type epitaxial layer (), p-type carrier extracting regions () are formed. According to the trench gate power MOSFET (), holes generated in a cell region can be effectively collected through the p-type carrier extracting regions () so as to further increase a speed of the switching operation.

Growing community of inventors

Hanno, Japan

Kunihito Oshima