Shindengen Electric Manufacturing Company Limited

Kunihito Ohshima

Toshiyuki Takemori

Yuji Watanabe

Masato Itoi

Fuminori Sasaoka

Kazushige Matsuyama

Toshikazu Tezuka

Masaya Shirota

MOS FETs are formed by a drain layer, a drift layer, P-type body areas, N-type source areas, gate electrodes, a source electrode film, and a drain electrode film. In parallel to the MOS FETs, the drain layer, the drift layer, the P-type diffusion area, and the source electrode filmform a diode. The source electrode filmand the P-type diffusion areaform an Ohmic contact. The total amount of impurities, which function as P-type impurities in each P-type body area, is larger than the total amount of impurities, which function as P-type impurities in the P-type diffusion area

Semiconductor device for reducing forward voltage by using OHMIC contact

A semiconductor overcurrent limiter having input and output terminals includes a depletion type vertical MOSFET, a depletion type lateral MOSFET, and a zener diode. A back gate of the lateral MOSFET is formed in common with a drain electrode of the vertical MOSFET to provide the input terminal, and a gate of the vertical MOSFET is connected to an anode of the zener diode to provide the output terminal. Further, a source electrode of the vertical MOSFET is connected to source and gate electrodes of the lateral MOSFET and a cathode electrode of the zener diode.

Two-terminal semiconductor overcurrent limiter

Growing community of inventors

Kawagoe, Japan

Kunihito Ohshima