Toyota Jidosha Kabushiki Kaisha

Kunihito Kato

Takahiro Ito

Toru Onishi

Shuhei Oki

A method for manufacturing a semiconductor device is provided. The method includes a process of applying liquid to one surface of a support substrate; a process of warping the support substrate by a volume change due to a phase transition of the liquid by solidifying the liquid; a process of attaching a semiconductor substrate having a linear expansion coefficient different from that of the support substrate to the support substrate in a heated state; and a process of warping the support substrate due to a linear expansion coefficient difference between the semiconductor substrate and the support substrate by cooling the support substrate to which the semiconductor substrate is attached. A warping direction due to the phase transition is opposite to a warping direction due to the linear expansion coefficient difference.

Method for manufacturing semiconductor device

A method includes: forming a front surface structure of a semiconductor element on a front surface side of a semiconductor substrate; forming crystal defects in the semiconductor substrate by implanting charged particles into the semiconductor substrate; subjecting the semiconductor substrate to a heat treatment after having formed the crystal defects; attaching a supporting plate on the front surface side of the semiconductor substrate after the heat treatment; thinning the semiconductor substrate by grinding a back surface side of the semiconductor substrate to which the supporting plate has been attached; and forming a back surface structure of the semiconductor element on a back surface of the thinned semiconductor substrate.

A semiconductor wafer, includes: a plurality of element regions; a surface electrode that is disposed in each of the plurality of element regions; an insulating layer that is disposed in each of the plurality of element regions and of which height from a front side surface of the semiconductor wafer is higher than that of the surface electrode in a periphery of the surface electrode; and a dicing line groove that is formed in a front side surface of the semiconductor wafer, that surrounds the surface electrode with the insulating layer therebetween, of which height from the front side surface of the semiconductor wafer is lower than that of the insulating layer, and that extends to a perimeter of the semiconductor wafer; in which the insulating layer is formed with a communication passage that extends from a side of the surface electrode to the dicing line groove.

Growing community of inventors

Nisshin, Japan

Kunihito Kato