Ebara Corporation

International Business Machines Corporation

Kunihito Ide

Hiroyuki Kanda

Koji Mishima

Junji Kunisawa

Hidenao Suzuki

Satoru Yamamoto

Natsuki Makino

Keiichi Kurashina

Kazufumi Nomura

Hariklia Deligianni

Emanuel Israel Cooper

Takashi Kawakami

Keisuke Namiki

Seiji Katsuoka

Mizuki Nagai

Tsutomu Nakada

Philippe M Vereecken

Shinya Morisawa

Brett Caroline Baker-O'Neal

Katsuyuki Musaka

Naoki Mihara

An electroplating apparatus can form a plated film having a more uniform thickness and good film quality over an entire surface of a substrate having a conductive layer (seed layer) whose resistivity is equal to or higher than that of copper. The electroplating apparatus includes: a substrate holder for holding a substrate; a sealing member for contact with a peripheral portion of a surface of a substrate, held by the substrate holder, to seal the peripheral portion; a cathode contact for contact with a conductive layer formed in the surface of the substrate, held by the substrate holder, to feed electricity to the conductive layer; and a housing having therein an anode to be immersed in a plating solution, and a porous structure disposed at an open end facing the substrate held by the substrate holder, said porous structure defining a plating chamber in the housing; wherein the plating chamber is divided into rooms by a partition plate and the porous structure, and the anode is comprised of a plurality of divided anodes, each divided anode being disposed in each room of the plating chamber so that each divided anode can pass an independent plating current.

Electroplating apparatus and electroplating method

A plating apparatus can form a plated film having a uniform thickness over the entire surface of a substrate without a change of members. The plating apparatus includes a substrate holder, a cathode contact for contacting a conductive film formed on the substrate so that the conductive film serves as a cathode, a ring-shaped seal member for covering the cathode contact and bringing its inner circumferential portion into contact with the peripheral portion of the substrate to seal the peripheral portion of the substrate, an anode disposed so as to face the conductive film formed on the substrate, and an auxiliary cathode disposed with respect to the seal member such that at least part of the auxiliary cathode is exposed on a surface of the seal member. Plating is carried out by bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution.

Plating apparatus

A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

Plating apparatus and plating method

The present invention provides an electrolytic processing apparatus which is capable of increasing an in-plane uniformity of a film thickness of a plated film by making more uniform an electric field distribution over an entire surface to be processed of a substrate even if the substrate has a large area, and controlling more uniformly a speed, over the entire surface to be processed of the substrate. The electrolytic processing apparatus of this invention includes: a substrate holder for holding a substrate, a first electrode for being brought into contact with the substrate to supply current to a surface, to be processed, of the substrate; a second electrode disposed substantially parallel to the surface, to be processed, of the substrate in a position facing the surface, to be processed, of the substrate held by the substrate holder; a high resistance structure disposed between the substrate held by the substrate holder and the second electrode; an electrolytic solution introducing portion for introducing an electrolytic solution into a region across which the substrate held by the substrate holder and the high resistance structure face each other, from laterally of the high resistance structure; and a power source for applying a voltage between the first electrode and the second electrode.

Electrolytic processing apparatus and substrate processing method

A plating method is capable of depositing a plated film having excellent in-plane uniformity with respect to a thin seed layer and excellent embeddability with respect to fine damascene structures. The plating method includes: positioning an electric resistor between a conductive layer formed on at least a portion of a surface of a substrate and an anode; introducing respectively a plating solution into a space between the conductive layer and the anode on a conductive layer side, and an anode solution into a space between the conductive layer and the anode on an anode side, thereby filling the space with a plating bath composed of the plating solution and the anode solution, with the plating solution containing 25 to 75 g/L of copper ions and at least 0.4 mole/L of an organic acid or an inorganic acid, and the anode solution being of the same composition as the plating solution, or containing 0 to 75 g/L of copper ions and at most 0.6 mole/L of an organic acid or an inorganic acid; and applying a voltage between the conductive layer and the anode to plate a surface of the conductive layer.

Plating method and plating apparatus

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Tokyo, Japan

Kunihito Ide