Lintec Corporation

Kyushu Institute of Technology

Kyushu University

Kunihisa Kato

Wataru Morita

Tsuyoshi Mutou

Tsuyoshi Muto

Yuma Katsuta

Yuta Seki

Koji Miyazaki

Takeshi Kondo

Mutsumi Masumoto

Chihaya Adachi

Kazue Uemura

Masaya Todaka

Emi Nakajima

Teruaki Hayakawa

Katsuhiko Horigome

Taku Nemoto

Toshiya Yamasaki

Yoshika Hatasako

Aiko Harada

Provided is a thin thermoelectric conversion module provided with no support base material and including: an integrated body including an insulator configured to fill a gap defined by a chip of a P-type thermoelectric conversion material and a chip of an N-type thermoelectric conversion material, the chips being alternately arranged and spaced apart from each other; a common first electrode provided on one surface of the integrated body and joining one surface of the chip of the P-type thermoelectric conversion material and one surface of the chip of the N-type thermoelectric conversion material; and a common second electrode provided on another surface of the integrated body, facing the first electrode, and joining another surface of the chip of the N-type thermoelectric conversion material and another surface of the chip of the P-type thermoelectric conversion material, in which the first electrode and the second electrode provide electrically serial connection between the chip of the P-type thermoelectric conversion material and the chip of the N-type thermoelectric conversion material, and both surfaces of the thermoelectric conversion module are provided with no base material.

Thermoelectric conversion module

Provided is a thermoelectric conversion module including a thermoelectric conversion material layer that has high thermoelectric performance, the thermoelectric conversion material layer containing a thermoelectric conversion material with its electrical resistivity reduced. The thermoelectric conversion module includes the thermoelectric conversion material layer including the thermoelectric conversion material containing at least thermoelectric semiconductor particles. The thermoelectric conversion material layer has voids, and when a proportion of the area occupied by the thermoelectric conversion material within the area of a longitudinal cross-section that includes the center portion of the thermoelectric conversion material layer is defined as a filling ratio, the filling ratio is greater than 0.900 and less than 1.000.

Provided is a method for manufacturing a thermoelectric conversion module that eliminates the need for supports and solder materials, allows collective and efficient production of a plurality of thin thermoelectric conversion modules, and includes the following steps (A) to (D): (A) disposing a chip of a P-type thermoelectric conversion material and a chip of an N-type thermoelectric conversion material on a support so as to be spaced apart from each other; (B) filling an insulator between the chip of the P-type thermoelectric conversion material and the chip of the N-type thermoelectric conversion material to obtain an integrated body including the chip of the P-type thermoelectric conversion material, the chip of the N-type thermoelectric conversion material, and the insulator; (C) peeling the integrated body obtained in step (B) from the support; and (D) connecting the chip of the P-type thermoelectric conversion material and the chip of the N-type thermoelectric conversion material via an electrode in the integrated body after step (C).

Method for manufacturing thermoelectric conversion module

Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.

Thermoelectric conversion body, thermoelectric conversion module, and method for manufacturing thermoelectric conversion body

Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (). Also provided are: a method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including (A) a step of forming a sacrificial layer () on a substrate (), (B) a step of forming a chip of a thermoelectric conversion material on the sacrificial layer formed in the step (A), (C) a step of annealing the chip of a thermoelectric conversion material formed in the step (B), and (D) a step of peeling the chip of a thermoelectric conversion material annealed in the step (C); and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

Production method for chip made of thermoelectric conversion material and method for manufacturing thermoelectric conversion module using chip obtained by said production method

A thermoelectric conversion module having a further improved thermoelectric performance is provided. The thermoelectric conversion module includes: a base material; and a thermoelectric element layer including a thermoelectric semiconductor composition, wherein the thermoelectric semiconductor composition includes a thermoelectric semiconductor material, a heat resistant resin A, and an ionic liquid and/or inorganic ionic compound, and wherein the base material has a thermal resistance of 0.35 K/W or less.

A chip of thermoelectric conversion material may have a concave portion and may be capable of realizing high joining properties to an electrode. Such a chip of thermoelectric conversion material may have a concave on at least one surface of the chip of thermoelectric conversion material. The shape of such chips of may be rectangular parallelepiped, cubic, and/or columnar shape.

Chip of thermoelectric conversion material

The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

Manufacturing method of thermoelectric conversion element

A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

Thermoelectric conversion material chip manufacturing method, and method for manufacturing thermoelectric conversion module using chip obtained by said manufacturing method

The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.

Thermoelectric conversion material and method for producing same

Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material. The electrode material for thermoelectric conversion modules includes a first substrate and a second substrate facing each other, a thermoelectric element formed between the first substrate and the second substrate, and an electrode formed on at least one substrate of the first substrate and the second substrate, wherein the substrate is a plastic film, the thermoelectric element contains a bismuth-tellurium-based thermoelectric semiconductor material, a telluride-based thermoelectric semiconductor material, an antimony-tellurium-based thermoelectric semiconductor material, or a bismuth-selenide-based thermoelectric semiconductor material, the electrode that is in contact with the thermoelectric element is formed of a metal material, and the metal material is gold, nickel, aluminum, rhodium, platinum, chromium, palladium, stainless steel, molybdenum or an alloy containing any of these metals.

Electrode material for thermoelectric conversion modules and thermoelectric conversion module using same

To provide a Peltier cooling element that is excellent in thermoelectric performance and flexibility and can be manufactured easily at low cost. A Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, and a method for manufacturing a Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, the method containing: coating a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, on a support, and drying, so as to form a thin film; and subjecting the thin film to an annealing treatment.

Peltier cooling element and method for manufacturing same

The present invention provides a thermoelectric conversion material having a reduced thermal conductivity and having an improved figure of merit, and a method for producing the material. The thermoelectric conversion material has, as formed on a resin substrate having recesses, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the resin substrate comprises one formed by curing a resin layer of a curable resin composition. The production method for the thermoelectric conversion material comprises a resin substrate formation step of transcribing a protruding structure from an original plate having the protruding structure onto a resin layer of a curable resin composition and curing the layer, and a film formation step of forming a thermoelectric semiconductor layer of a thermoelectric semiconductor material on the resin substrate.

Thermoelectric conversion material and method for manufacturing same

The present invention provides a thermally conductive adhesive sheet that can be easily laminated on an electronic device without an adhesive layer therebetween and can further selectively dissipate heat in a particular direction to provide a sufficient temperature difference to the inside of the electronic device, a method for producing the same, and an electronic device using the same. The present invention includes a thermally conductive adhesive sheet comprising a high thermally conductive portion and a low thermally conductive portion, wherein the high thermally conductive portion and the low thermally conductive portion have adhesiveness, and the high thermally conductive portion and the low thermally conductive portion each independently constitute an entire thickness of the thermally conductive adhesive sheet, or at least either the high thermally conductive portion or the low thermally conductive portion constitutes a portion of a thickness of the thermally conductive adhesive sheet, and a method for producing the thermally conductive adhesive sheet, and an electronic device using the thermally conductive adhesive sheet.

Heat-conductive adhesive sheet, manufacturing method for same, and electronic device using same

The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.

Growing community of inventors

Warabi, Japan

Kunihisa Kato