Hitachi, Ltd.

Kunihiro Yagi

Chusuke Munakata

Toshiyuki Mine

Yoshitaka Tadaki

Masaru Miyazaki

Yuzuru Ohji

Osamu Kasahara

Hiroko Kaneko

Teruaki Motooka

Shiyouzou Yoneda

A solid state device includes a transistor (A) and a capacitor (B). The capacitor is defined by a lower polycrystalline silicon layer or electrode (20), multiple dielectric layers (22), and an upper polycrystalline silicon layer or electrode (30). The dielectric layers are formed by vapor depositing a 3.6-18.6 nm thick layer of silicon nitride on the lower polycrystalline layer. Thicker silicon nitride layers increase the failure rate and decrease the capacitance (FIG. 8). More specifically, the silicon nitride layer is deposited on a thin, about 1 nm, oxidized film or surface (24) of the polycrystalline silicon layer. The silicon nitride layer is oxidized forming a silicon dioxide layer (28) until the silicon nitride layer is only about 3 nm thick. This forms on oxide layer that is 1-8.4 nm thick. If the silicon nitride layer is reduced below 3 nm, the polycrystalline silicon tends to oxidize rapidly reducing capacitance and increasing failure (FIG. 8).

Semiconductor device with multilayer silicon oxide silicon nitride

An information recording method is provided, in which a p- or n-type semiconductor wafer is irradiated with an energetic particle beam such as an electron beam thereby to control, e.g., decreased or increased generation of the surface photovoltage at the irradiated area so that information may be recorded on the wafer.

Method of information recording on a semiconductor wafer

A device for measuring semiconductor characteristics, wherein electrodes are installed maintaining a gap on the front and back sides of a semiconductor specimen of which the characteristics are to be measured, at least one of the electrodes being transparent, the surface of the semiconductor specimen is scanned with a pulsed narrow photon beam via the transparent electrode, and a photovoltage generated between the front and back surfaces of the semiconductor specimen is taken out from the two electrodes via the capacitive coupling, in order to observe the distribution of characteristics in the surface of the semiconductor specimen.

Device for measuring semiconductor characteristics

Growing community of inventors

Nishitama, Japan

Kunihiro Yagi