Tdk Corporation

Kunihiro Ueda

Masatoshi Nakayama

Hiraku Hirabayashi

Kenji Yokoyama

Tsuyoshi Umehara

Yoshimitsu Wada

Kazuma Yamawaki

Fumio Maruta

Hiroshi Yamazaki

Koji Kobayashi

Mitsuru Takai

Suguru Watanabe

Masanori Shibahara

Yasufumi Takasugi

Yoshiyuki Mizoguchi

Toru Shimozawa

Hiromichi Kanazawa

Masatoshi Okamura

Shigeo Kurose

Kentaro Nagai

Hiroshi Tanabe

Masaru Ikebe

Yuichi Kubota

Takeo Kagami

Takahiro Hayashi

Shunji Saruki

Morimasa Sasaki

Toshihiko Ishida

Koichi Yajima

Kazuya Maekawa

Kenji Nakaya

Satoshi Abe

Koichi Otani

Shuhei Miyazaki

Shinji Miyazaki

Yohei Hirota

Tsunehiko Ikarashi

Takayoshi Kobuke

Homare Tokida

Hiroshi Naganuma

Masahide Kohno

Hiroki Nakazawa

Katsuaki Yanagiuchi

Kenji Shirasuna

Takatoshi Ooyama

Michihiro Nemoto

Masashi Higo

Kiyoshi Yazu

This sensor unit includes a base having a substantially-rectangular planar shape including a first side and a second side that are substantially orthogonal to each other, and a plurality of first sensors provided on the base and arranged on a first axis. The first axis is substantially parallel to the first side and passes through a center position of the base.

Sensor unit

A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

Magnetic sensor and magnetic encoder

A magnetic sensor device comprises a magnetic sensor chip that has a substantially rectangular shape and that contains a magnetic sensor element; and a sealing body, which is composed of a resin material containing magnetic particles and that integrally seals the chip. The chip includes a first and second side surfaces which are mutually opposite to each other, and a third and fourth side surfaces which are mutually opposite to each other and orthogonal to the first and second side surfaces. The sealing body contains first to forth sealing parts. The thicknesses of the first and second sealing parts are smaller than the particle diameter of the particles, and the thickness of at least the third sealing part is larger than the particle diameter of the particles. The particles exist in at least the third sealing part and substantially do not exist in the first and second sealing parts.

Magnetic sensor device

A magnetic field detection apparatus has a first magnetic sensor and a bias magnet positioned to face the first magnetic sensor. The bias magnet has a magnetic pole surface that faces the first magnetic sensor and that applies a bias magnetic field to the first magnetic sensor. The first magnetic sensor detects magnetic field in a first direction that is parallel to the magnetic pole surface. The magnetic pole surface of the bias magnet has a plurality of grooves arranged in the first direction.

Magnetic field detection apparatus and rotation detection apparatus

A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements include at least magnetization direction change layers where a direction of magnetization is changed according to an external magnetic field. The width Wof a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the first magnetoresistive effect element, and the width Wof a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the second magnetoresistive effect element have a relationship shown by formula (1) below. Sensitivity of the first magnetoresistive effect element to the external magnetic field is higher than that of the second magnetoresistive effect element.&#x2003;&#x2003;(1)

Semiconductors of different types are formed by a crystal growth technique and joined at the interface at which rapid atomic-layer-level compositional changes occur while maintaining high crystallinity of the semiconductor layers so as to form a heterogeneous PN junction. A layered film that includes a PN junction oxide thin film is formed on a single crystal substrate. The PN junction oxide thin film is constituted by an N-type semiconductor oxide thin film and a P-type semiconductor oxide thin film that are epitaxially grown to have c-axis orientation represented by (00k).

Layered film including heteroepitaxial PN junction oxide thin film

A magnetic sensor system includes a scale and a magnetic sensor arranged in a relative positional relationship variable in a first direction, and a computing unit. The magnetic sensor includes a first detection circuit, a second detection circuit and a third detection circuit that are disposed at a first position, a second position and a third position, respectively. Each of the first to third detection circuits includes a spin-valve MR element. A difference between two of the first to third positions that are the most distant from each other in a first direction falls within a one-pitch amount of change in the relative positional relationship between the scale and the magnetic sensor. The computing unit generates first and second post-computation signals having mutually different phases by computation using detection signals from the first to third detection circuits.

Magnetic sensor system including three detection circuits

As a protective film of an element and a slider in a magnetic head, a film is provided which is excellent in adhesiveness to a film forming surface and which shows sufficient corrosion-resistance property with a thinner thickness. To provided this film, according to the present invention, a DLC film as a protective film is formed onto an element portion end surface and a surface of a slider of a magnetic head core. A film deposition step is conducted plural times to obtain the DLC film with a predetermined thickness when the DLC film is formed using an electric discharge.

Method of manufacturing a magnetic head

A method of manufacturing a magnetic head manufactures a magnetic head having a base, and a laminate stacked on the base and including a magneto-resistive device. The method mechanically polishes a surface of a structure including the base and the laminate close to a magnetic recording medium, wherein the surface of the structure includes an end face of the laminate including an end face of the magneto-resistive device and a surface of the base. Next, the method selectively etches a first region on the surface of the structure close to the magnetic recording medium, wherein the first region includes the surface of the base but does not include the end face of the magneto-resistive device. Subsequently, the method entirely etches the surface of the structure close to the magnetic recording medium.

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Tokyo, Japan

Kunihiro Ueda