Fujitsu Corporation

Other

Kunihiro Tanikawa

Yuichiro Ito

Yoshihiro Miyamoto

Osamu Ohtsuki

Hisashi Yamaguchi

Keizo Kurahashi

Nobuyuki Kajihara

Isao Tofuku

Kazuya Kubo

Tomoyuki Unotoro

Mitsuo Ishii

A charge injection circuit for injecting a charge to a signal processing circuit has a photo-voltaic element for generating a photocurrent when an infrared light is received, a field effect transistor used for injecting the charge to the signal processing circuit, and an impedance conversion circuit for feeding back an output of the field effect transistor to a substrate potential of the photo-voltaic element. The impedance conversion circuit has a gain which is greater than zero and less than or equal to one.

Charge injection circuit having impedance conversion means

A charge coupled device transfers a charge via a meandering route in a channel having at least one bend. The selected channel bending angle has a maximum of two right angles, or 180.degree.. When the channel bending angle is less than 180.degree., the channel may be formed into a ring by being bent a plurality of times. The gate electrode is of simple rectangular form, and is bent at the same angle as the channel where the channel is bent. If the channel is bent at 180.degree., a signal injected from an input end is transferred to an area adjacent to the input end. The signal may be injected again at the input end for circulation, after amplification.

Charge coupled device having meandering channels

A matrix operation device performs matrix multiplication of an input electrical signal by utilizing a plurality of charge-coupled devices having split electrodes. The multiplication is carried out by the split electrodes of the charge-coupled devices. A signal to be transformed is sampled by a delay circuit in the input of the operation device. The sampled signal is supplied to the operation device in the form of a time series or sequence consisting of the sample signals. Each sample is multiplied by a corresponding coefficient. The split electrodes of the charge-coupled devices have weighting coefficients corresponding to coefficients in the matrix. The samples multiplied by the coefficients are added in the output of the operation device and provided as an output signal, corresponding to the development of the matrix multiplication.

Semiconductor matrix operation device

A new type flat panel display device has the structure combining a plurality of solid state display modules corresponding to character blocks. Each module is assembled using, as the basic element, a semiconductor substrate integrating circuit elements for driving and circuits for addressing, and moreover, it is provided with a memory element for a selection signal in view of making possible access to each module.

Display device

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Akashi, Japan

Kunihiro Tanikawa