Sharp Kabushiki Kaisha Corporation

Other

Sumitomo Electric Industries, Limited

Kunihiro Takatani

Mototaka Taneya

Shigetoshi Ito

Susumu Ohmi

Kensaku Motoki

Takayuki Yuasa

Daisuke Hanaoka

Toshiyuki Okumura

Masafumi Kondo

Masaya Ishida

Susumu Omi

Yoshika Kaneko

Fumio Yamashita

A III-V-group compound semiconductor device includes a substrate, a channel layer provided over the substrate, a barrier layer provided on the channel layer so as to form a hetero-interface, a plurality of electrodes provided on the barrier layer, an insulator layer provided to cover an entire upper surface of the barrier layer except for at least partial regions of the electrodes, and a hydrogen-absorbing layer stacked on the insulator layer or an integrated layer in which an hydrogen-absorbing layer is integrated with the insulator layer.

III-V-group compound semiconductor device

The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer includes, as a main component, at least one oxide of a metal selected from a group of metals consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.

Nitride semiconductor devices including a separation preventing layer

On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.

Nitride semiconductor laser element and fabrication method thereof

In one embodiment of the present invention, a long-life nitride semiconductor laser element is disclosed wherein voltage characteristics do not deteriorate even when the element is driven at high current density. Specifically disclosed is a nitride semiconductor laser element which includes a p-type nitride semiconductor and a p-side electrode formed on the p-type nitride semiconductor. In at least one embodiment, the p-side electrode has a first layer which is in direct contact with the p-type nitride semiconductor and a conductive second layer formed on the first layer, and the second layer contains a metal element selected from the group consisting of Ti, Zr, Hf, W, Mo and Nb, and an oxygen element.

Nitride semiconductor laser device and nitride semiconductor laser apparatus

A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.

Semiconductor light emitting device and method for fabricating same

A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layerof a first conduction type formed on a substrate, an active layerformed on the first cladding layer, a second cladding layerof a second conduction type formed on the active layer, and a buried layerformed on the second cladding layer, the buried layer having an opening portion for constricting a current in a selected region of the active layer, wherein an upper portion of the second cladding layerhas a ridge portion, the ridge portion residing in the opening portion of the buried layer, and the buried layerdoes not substantially absorb light output from the active layer, and the buried layer has a refractive index which is approximately identical with that of the second cladding layer

Compound semiconductor laser

A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.

Method for fabricating a group III nitride semiconductor laser device

An electrode structure on a p-type III group nitride semiconductor layer includes first, second and third electrode layers successively stacked on the semiconductor layer. The first electrode layer includes at least one selected from a first metal group of Ti, Hf, Zr, V, Nb, Ta, Cr, W and Sc. The second electrode layer includes at least one selected from a second metal group of Ni, Pd and Co. The third electrode layer includes Au.

Electrode structure on P-type III group nitride semiconductor layer and formation method thereof

Group III nitride semiconductor laser device

An InGaAlN-based semiconductor laser device, comprising a first layer of a first conductivity type, an active layer having a smaller forbidden band than that of the first layer, and a second layer of a second conductivity type having a larger forbidden band than that of the active layer. The second layer includes a flat region and a stripe-shaped projecting structure. A stripe-shaped optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripe-shaped projecting structure. A current-constricting layer of the first conductivity type or of a high resistance is formed for covering a top surface of the flat region of the second layer, a side surface of the projecting structure of the second layer, and a side surface of the optical waveguide forming layer. A difference between a thermal expansion coefficient of the current-constricting layer and a thermal expansion coefficient of the second layer is in the range of &minus;4&times;10 /&deg; C. to &plus;4&times;10 /&deg; C.

Semiconductor laser

A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer of a first conduction type formed on a substrate , an active layer formed on the first cladding layer, a second cladding layer of a second conduction type formed on the active layer , and a buried layer formed on the second cladding layer , the buried layer having an opening portion for constricting a current in a selected region of the active layer, wherein an upper portion of the second cladding layer has a ridge portion, the ridge portion residing in the opening portion of the buried layer , and the buried layer does not substantially absorb light output from the active layer , and the buried layer has a refractive index which is approximately identical with that of the second cladding layer

A GaN group compound semiconductor device includes an electrode structure provided on a p-GaN group compound semiconductor layer, the electrode structure including: a first layer formed on the p-GaN group compound semiconductor layer, the first layer including a compound including a first metal element and Ga; and a second layer formed on the first layer, the second layer including the first metal element. The first layer contains substantially no nitrogen.

GaN group compound semiconductor device and method for producing the same

The dielectric multilayered reflector of the invention is formed on at least one of two emitting surfaces of a semiconductor laser device. The dielectric multilayered reflector includes: a multilayered structure formed by stacking a plurality of layers; and a layer made of magnesium difluoride. In this dielectric multilayered reflector, the multilayered structure includes at least one layer made of an oxide dielectric material and the layer made of magnesium difluoride is formed on a surface of an outermost layer of the multilayered structure.

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Nara, Japan

Kunihiro Takatani