Seiko Instruments Inc

Kabushiki Kaisha Daini Seikosha

Seiko Instruments & Electronics Ltd.

Woojin Corporation

Sonic Corporation

Agency Industrial Science

Kunihiro Takahashi

Hiroaki Takasu

Yoshikazu Kojima

Tsuneo Yamazaki

Nobuyoshi Matsuyama

Hitoshi Niwa

Tadao Iwaki

Tomoyuki Yoshino

Atsushi Sakurai

Masaaki Kamiya

Kenichi Kondo

Shiro Yamashita

Shunichi Motte

Naoyuki Echigo

Tsuneo Kuwabara

Kenji Aoki

Noriaki Saito

Yutaka Hayashi

Kunio Nakajima

Naoto Saito

Mizuaki Suzuki

Tadao Akamine

Toru Akiyama

Kazuo Takemura

Masahiko Kinbara

Hee June Park

Hyun Myoung Shin

Yomoyuki Yoshino

Kye Hyeon Ryu

The present invention relates to flow measurement, and more particularly, to a system for measuring a flow rate by three-dimensionally crossing a plurality of sidings each other within a conduit. An ultrasonic flow measurement system according to the present invention determines a flow central part of fluid by three-dimensionally crossing the plurality of sidings each other within the conduit in three dimensions and calculates a flow rate flowing in the conduit, meeting the flow central part, thereby more accurately measuring the flow rate than the existing method.

Ultrasonic flow measurement system

Light valve device

A highly integrated light valve is formed with a composite substrate formed of a quartz substrate and a monocrystalline silicon thin film layer bonded to the quartz substrate, in which an X driving circuit and a Y driving circuit are integrated utilizing very large scale integration processing. Driving electrodes are arranged in a matrix format on the composite substrate for providing signals output from the X driving circuit and the Y driving circuit to respective transistors and display pixel electrodes arranged at each intersection of the driving electrodes in the matrix. A control circuit for supplying timing signals to the X driving circuit and the Y driving circuit and a display data generating circuit for generating display data in order to display an image are also integrated on the composite substrate. A light source element driving circuit for driving a light source element is provided thereon for projecting a displayed image. A liquid crystal layer is sealed in a gap between the composite substrate and a second, opposed substrate with a sealing agent. The sealing agent is, for example, a resin which is stiffened by ultraviolet radiation and is supplied along a predetermined seal region. The present invention provides an improved structure for a light valve device having a high reliability, compact size, high pixel density and high resolution.

A dense display may be provided with an internal defect detection circuit to enhance production yield. A plurality of pixels, each including thin film transistors and liquid crystal cells driven by driving electrodes, are arranged in a matrix form and scanned by a plurality of control signal lines and a plurality of image signal lines. A control signal line driving circuit is formed of shift registers having one bit per signal line, and sample-and-hold circuits. An inspection circuit is provided with plural switching elements, each having a first terminal connected to a respective image signal line, a second terminal connected to an inspection output line and a third terminal receptive of an inspection control input signal for controlling an electrical connection between the first and second terminals. In accordance with this configuration, inspection of individual signal lines may be achieved and the inspection control input signal may be internally or externally generated. Moreover, similar detection circuitry may be used to detect defects in the control signal lines and, in this manner, defects may be located to the individual pixel level.

Display device having defect inspection circuit

To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer,formed above an insulating substrate,through an adhesive layer,and an insulating layer,formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers,and,made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.

Semiconductor device

A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed of a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.

Method of forming a semiconductor device for a light valve

A miniaturized light valve with a surface area on the order of several centimeters may be successfully formed using a composite substrate and an opposing substrate which has thereon an electrode and which is bonded to the composite substrate at a predetermined gap therefrom. An electro-optical material, such as a liquid crystal compound, is confined within the gap. The composite substrate includes a single crystal layer of a semiconductor material provided on a lower level insulation layer. The single crystal layer is formed with a source region, a drain region, and a channel region of a MOS transistor, and a gate insulation film is provided on the single crystal layer in alignment with the channel region. Further, a gate electrode is provided on the gate insulation film. The composite substrate further includes a pixel electrode on the upper major surface of an insulation layer deposited over the MOS transistor and in contact with the drain region. The single crystal semiconductor thin film is limited to 0.3 microns in thickness resulting in a light valve characterized in that a parasitic channel and a bipolar action in the MOS transistor are eliminated for the purpose of suppressing an increase in the OFF current, or leakage current caused by incident light radiation onto the transistors.

Light valve having a semiconductor film and a fabrication process thereof

A process for manufacturing a light valve device comprises forming a transparent insulating thin film layer on a surface of a semiconductor substrate, and forming a single crystal semiconductor thin film on a surface of the transparent insulating thin film layer. A portion of the single crystal semiconductor thin film is then removed and at least one pixel electrode is formed on the transparent insulating thin film layer at a region where the single crystal semiconductor thin film has been removed. A driving unit is then formed in the single crystal semiconductor thin film. Thereafter, a carrier substrate is laminated using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit. The semiconductor substrate is then removed to expose a surface of the transparent insulating thin film layer and through-holes and a metal film are formed on the exposed surface thereof. Thereafter, the metal film is removed to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes. A substrate is then arranged opposite to the transparent insulating thin film to define a gap therebetween, and an electrooptical material is disposed in the gap.

Process for manufacturing light valve device using semiconductive

A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve comprising a pixel array region and a drive circuit region on a major face of the semiconductor substrate. A stopper film is formed on the major face of the semiconductor substrate at the pixel array region, and a pixel array is formed over the silicon oxide stopper film. A drive circuit is formed on the drive circuit region, and silicon oxide posts are embedded in the major face of the semiconductor substrate at the drive circuit region. A thickness of the semiconductor substrate is then selectively removed from a back face opposite to the major face thereof to reach the stopper film. After the selective removing step, the portion of the semiconductor substrate under the pixel region is completely removed while a portion of the semiconductor substrate under the drive circuit region remains.

Method of producing a semiconductor device for a light valve

A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.

Method of making light valve device using semiconductive composite

A semiconductor wafer is comprised of a transparent layer interposed between a thin silicon layer and a thick silicon layer. Silicon islands are formed from the thin silicon layer on the transparent layer. Device elements are formed in the silicon islands. Thereafter, the thick silicon layer which is a support layer is etched away to form a transparent region on the wafer. The wafer is constructed to avoid elimination or destruction of the transparent layer during the course of formation of the silicon islands and during the course of etching of the rear thick silicon plate. The transparent layer is comprised of a silicon nitride film or a silicon carbide film. Alternatively, the transparent layer is comprised of a silicon oxide film covered by a silicon nitride film or a silicon carbide film on one or both of the upper and lower faces of the silicon oxide film.

Method of making semiconductor device with multiple transparent layers

A semiconductor device has an integrated circuit formed in a monosilicon layer provided on an electrically insulative material. The monosilicon layer has an integrated circuit formed thereon, and a passivation film covers the integrated circuit. A support member is fixed to the electrically insulative material through an adhesive layer to support the monosilicon layer. The integrated circuit comprises an MIS transistor having a source region, drain region, and channel region formed in the monosilicon layer. The semiconductor device is suitable for use in a high speed, high capacity liquid crystal light valve having a structure where a pixel switching element group and a peripheral driver circuit are formed integrally on a common substrate.

Semiconductor device with monosilicon layer

Herein disclosed are a semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film formed integrally with transistor elements is laminated on an insulating thin film and is formed with through holes and in which the insulating thin film is formed on its back with electrodes and a shielding film, and a light valve device using the semiconductor device. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate, which is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film, and a transparent opposite substrate, so that the optical transparency of the electrooptical substance is controlled by the switching elements.

Light valve device using semiconductive composite substrate

A semiconductor on insulator substrate has improved electrostatic performance without sacrificing the performance of commonly integrated high-speed integrated circuitry. The semiconductor on insulator substrate includes a single crystal semiconductor thin film having an integrated circuit region and an electrostatic protection region. The thickness of the single crystal semiconductor thin film is greater in the electrostatic protection region than in the integrated circuit region to thereby allow high-speed operation of devices formed in the integrated circuit region. Such a substrate has particular application as a driving substrate for a light valve. In such a device, the integrated circuit region includes thin film switching transistors for selectively applying a voltage to the liquid crystal layer and thin film driving transistors for driving the thin film switching transistors. The electrostatic protection region includes an electrostatic protection device electrically connected to the integrated circuit region, and the electrostatic protection device is effective to protect the driving transistors from exposure to an excess of electrostatic charge.

Insulator substrate for a light valve device having an electrostatic

A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

Growing community of inventors

Tokyo, Japan

Kunihiro Takahashi