Kabushiki Kaisha Toshiba

Shibaura Mechatronics Corporation

Seiko Epson Corporation

Ebara Corporation

Other

Rigaku Industrial Corporation

Purex Co., Ltd.

Kunihiro Miyazaki

Ayako Shimazaki

Fumio Komatsu

Konosuke Hayashi

Manabu Tsujimura

Minoru Harada

Rempei Nakata

Yuji Nagashima

Naruhiko Kaji

Ryoichi Shinjo

Tsuyoshi Matsumura

Hiroyuki Matsuo

Toshiki Nakajima

Hiroshi Tomita

Takayuki Ito

Kiyotaka Miyano

Kouji Matsuo

Toshihiko Iinuma

Soichi Nadahara

Yoshihiro Uozumi

Yusuke Oshiki

Takuo Ohashi

Takaharu Itani

Kenichi Yoshino

Yutaka Nakano

Hiroaki Yamada

Takashi Shimizu

Yasuhiro Ito

Hisashi Muraoka

Yuji Fukazawa

Takashi Ootagaki

Masaki Kamimura

Masaji Akahori

Ken Nakajima

Mami Saito

Takashi Shoji

Tadashi Utaka

Sota Nakagawa

Hajime Onoda

Jun Matsushita

Tuyoshi Matumura

Kenji Minami

Kenji Takakura

Kinya Usuda

According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided. A processing liquid generator that generates processing liquid having undergone concentration adjustment includes a processing liquid adjuster (), which adjusts the concentration of the processing liquid, a first processing liquid path P, through which the processing liquid flows to the processing liquid adjuster (), a second processing liquid path P, through which the processing liquid flows to the processing liquid adjuster, a first concentration meter, which measures the concentration of the processing liquid flowing through the first processing liquid path P, the measured concentration being the concentration of a component involved in the concentration adjustment in the processing liquid adjuster (), a second concentration meter, which measures the concentration of the processing liquid flowing through the second processing liquid path P, the measured concentration being the concentration of a component that is involved in the concentration adjustment and should be measured with the first concentration meterin terms of concentration, a first valve mechanism, which opens and closes the first processing liquid path P, and a second valve mechanism, which opens and closes the second processing liquid path P

Processing liquid generator and substrate processing apparatus using the same

A substrate processing devicehas a water removing unitand, when a solvent supply unitsupplies a volatile solvent to a surface of a substrate W, the water removing unitsupplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

Substrate processing device and substrate processing method

According to one embodiment, a substrate processing apparatus () includes a table () configured to support a substrate W, a solvent supply unit () configured to supply a volatile solvent to a surface of the substrate W on the table (), and an irradiator () configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.

Substrate processing apparatus and substrate processing method

According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.

A manufacturing method for a semiconductor device, comprising: performing first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a processed amount with respect to each of the plurality of wafers in the first processing; obtaining a processed amount with respect to each of the plurality of wafers by second processing in a second processing apparatus after the first processing; deciding a second processing order, which is different from the first processing order, from the processed amount with respect to each of the plurality of wafers by the first processing and the processed amount with respect to each of the plurality of wafers by the second processing; and performing the second processing on the plurality of wafers in the second processing order in the second processing apparatus.

Manufacturing method and apparatus for semiconductor device

A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150&#xb0; C. and satisfies a relationship of y&#x2266;1E-5exp (21541/T).

Manufacturing method for semiconductor device and semiconductor device

A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.

Substrate cleaning apparatus and substrate cleaning method

A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150&#xb0; C. and satisfies a relationship of y&#x2266;1E-5exp(21541/T).

A trench is formed on a semiconductor substrate with a first insulation film patterned on the semiconductor substrate as a mask; a second insulation film is embedded in the trench and flattened; an upper portion of the first insulation film is selectively removed, and a part of a side face of the second insulation film is exposed; a part of the second insulation film is isotropically removed; a lower portion of the remaining first insulation film is selectively removed; and then a part of the remaining second insulation film is further isotropically removed so that an upper face of the second insulation film is at a predetermined height from a surface of the semiconductor substrate, a taper having a minimum taper angle of 90&#xb0; or more is formed on the side face of the second insulation film, and a STI is formed.

A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NHOH and HF wherein the relationships 0.30&#x2266;X/Y&#x2266;0.78 and 0.03&#x2266;Y&#x2266;6.0 are satisfied, where X represents a concentration [mol/L] of NHOH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from HO. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.

Semiconductor substrate treating method, semiconductor component and electronic appliance

The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

Method of manufacturing semiconductor device and cleaning apparatus

A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.

Method of manufacturing a semiconductor device, and a semiconductor substrate

An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiOas a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiOby the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.

Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus

In a small scaled plant intended for flexible manufacturing, a pure water supply system is provided at a low cost without reducing a production efficiency. A pure water system produces a plurality of grades of pure water which are supplied through pipes connected to points of use for cleaning, CMP, lithography, and the like. Upon receipt of a request signal from each point of use for starting to use a certain grade of pure water, a controller determines whether or not a required amount exceeds the capacity of the grade of pure water which can be supplied by the pure water system. If not, the controller sends a use permission signal to the point of use for permitting the same to use the pure water. When a certain use point is using the requested grade of pure water, the controller may not permit the requesting point of use to use the pure water until a use end signal is sent from the use point which is using the pure water.

Material supply system in semiconductor device manufacturing plant

Growing community of inventors

Yokohama, Japan

Kunihiro Miyazaki