Casio Computer Co., Ltd.

Kunihiro Matsuda

Hisatoshi Mori

Hiromitsu Ishii

Naohiro Konya

Hiroshi Matsumoto

Syunichi Sato

Ichiro Ohno

Junji Shiota

Yukikazu Tanaka

Norihisa Yamada

A light emitting device includes: a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a light emitting layer provided between the first electrode and the second electrode; a capacitor having a third electrode formed in a position overlapping the light emitting element and an insulating layer provided between the first and third electrodes; a first drive transistor disposed on a first side of the first electrode and having a gate electrode; and a second drive transistor disposed on a second side of the first electrode and having a gate electrode connected to the gate electrode of the first drive transistor via the third electrode.

Light emitting device and electronic device

Disclosed in a semiconductor device including a substrate, a first transistor, a second transistor, and a first source electrode and a first drain electrode of the first transistor are arranged along a first direction and a second source electrode and a second drain electrode of the second transistor are arranged in a reverse order of the first source electrode and the first drain electrode along the first direction, the first source electrode and the second source electrode are connected by a source connecting wiring, the first drain electrode and the second drain electrode are connected by a drain connecting wiring, a first gate electrode and a second gate electrode are connected by a gate connecting wiring and the source connecting wiring and the drain connecting wiring are provided at positions except a region overlapped with the first gate electrode, the second gate electrode and the gate connecting wiring.

Semiconductor device, light emitting apparatus and electronic device

A liquid crystal display device includes a first substrate having a common electrode thereon; a second substrate coupled to the first substrate, the second substrate having a connection electrode facing a portion of the common electrode on the first substrate, the connection electrode including a lower electrode made of metal, an insulating layer formed over the lower electrode and having a plurality of contact holes, and an upper electrode made of oxide conductor over the insulating layer, the upper electrode being electrically connected to the lower electrode via the plurality of contact holes; and a plurality of conductive gap members disposed between said portion of the common electrode and the upper electrode of the connection electrode to electrically connect said portion of the common electrode to the upper electrode of the connection electrode.

Liquid crsytal display device

Arranged in a series are an electrolyte tank capable of holding one of a number of substrates, each substrate having a conducting film thereon, and a cathode so that the cathode and substrate face each other in an electrolyte, an anodizing chamber for anodizing the substrate, a pretreatment chamber for calcining a photoresist mask put on part of the conducting film, and a post-treatment chamber for washing and drying the anodized substrate. A substrate transportation mechanism is provided for serially transporting the substrates one by one from the pretreatment chamber to the post-treatment chamber via the anodizing chamber. In the anodizing chamber described above, a formation voltage is increased to a value such that an oxide film with a desired thickness is formed so that the value of a current flowing through an aluminum alloy film as the conducting film is kept constant with the current density ranging from 3.0 mA/cm.sup.2 to 15.0 mA/cm.sup.2.

Anodizing apparatus and an anodizing method

A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.

Thin-film transistor having electrodes made of aluminum, and an active

A thin-film transistor includes a gate electrode and a semiconductor film consisting of amorphous silicon, formed on an insulating substrate to oppose each other through a gate insulating film, ohmic contact layers composed of n-type amorphous silicon doped with an impurity, electrically insulated from each other on the semiconductor film, and electrically connected to the semiconductor film, and source and drain electrodes arranged on the semiconductor film with a predetermined gap to form a channel portion, and electrically connected to the semiconductor film through the ohmic contact layers. The gate electrode and a portion surrounding the gate electrode are entirely formed into a continuous metal oxide film by a chemical reaction.

Thin-film transistor

A thin-film transistor panel comprises an insulative substrate, a plurality of thin-film transistor elements arranged at predetermined intervals on said substrate, and wirings electrically connecting the thin-film transistor elements characterized in that the thin-film transistor element comprises a gate electrode, a gate-insulating film, an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween, an n-type semiconductor layer, source and drain electrodes electrically connected the portions of the i-type semiconductor layer through the n-type semiconductor layer, and an anodically oxidized film located between the source and drain electrodes to electrically isolate, said source and drain electrodes.

Thin-film transistor having source and drain electrodes insulated by an

A thin-film transistor comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film placed on the gate insulating film to cover the gate electrode; and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate electrode is made of titanium-containing aluminum.

Growing community of inventors

Sagamihara, Japan

Kunihiro Matsuda