Hitachi Displays, Ltd.

Hitachi, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Ips Alpha Technology, Ltd.

Kunihiko Watanabe

Junichi Uehara

Mitsuo Nakatani

Miyo Ishii

Shigeru Ohno

Keiichiro Ashizawa

Masahiro Tanaka

Shigeru Kobayashi

Eiji Matsuzaki

Masahiko Suzuki

Toshiyuki Koshita

Tsuyoshi Uchida

Yasuko Gotoh

Shinzo Matsumoto

Akihiro Kenmotsu

Hideki Kuriyama

Yoshifumi Yoritomi

Satoru Todoroki

Hiroki Takahashi

Takao Takano

Toshikazu Horii

Masahiro Ukisu

Tomoyuki Ariyoshi

Yuuki Kamata

Yuuichi Nishimura

Yoshiyuki Kiya

In a portion of a gate signal line and a portion of a common signal line, cutouts which are arranged perpendicular to the extending direction of these lines and open to face each other in an opposed manner are formed. A cruciform shape in appearance is formed by combining a gap defined between the gate signal line and the common signal line extending parallel to each other and the cutouts to each other. The cruciform portion formed in this manner is used as an alignment mark in the exposure of a photolithography step of a layer formed later. Due to such a constitution, in manufacturing a thin film transistor substrate, it is possible to realize the highly accurate alignment without forming a pattern only used for alignment.

Thin film transistor substrate and method of manufacturing the same

A display device includes a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer on a substrate. The conductive layer forms a drain electrode and a source electrode of a thin film transistor which are arranged with a channel region of the semiconductor layer therebetween, and one of the drain and source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side so that the one electrode surrounds a distal end portion of another electrode as viewed in a plan view, and a projecting portion is formed on a side of the connecting portion opposite to the another electrode.

Display device and manufacturing method of the same

Conventionally, when a protective/insulation film is present above a film to be corrected, only a defect of the film to be corrected below such an upper-layer film is corrected without damaging the upper-layer film. A display region of a display device has an insulation film, a semiconductor film and a conductive film formed in a given pattern and stacked on a substrate. When at least one of a correction portion out of a correction portion which separates a short-circuit defect, a correction portion which connects an opening defect, a correction portion which removes a standard deviation defect, and a correction portion which separates a standard deviation defect of the pattern is corrected, at least one upper-layer film is present above a film to be corrected at the correction portion and the correction is applied to the film to be corrected while leaving the upper-layer film intact.

An object of the present invention is to provide a display device where a semiconductor layer pattern formed between a pair of electrodes can be formed to a predetermined size, even in the case where the distance between the electrodes on top of a semiconductor layer pattern is relatively large in elements formed in accordance with a photoresist reflow technology. The present invention provides a display device where elements are formed on an insulating substrate, characterized in that the above described elements comprise: a semiconductor layer pattern formed on a main surface of the above described insulating substrate or an insulating film layer formed on the main surface; and a number of electrodes provided in parallel at a distance from each other on the above described semiconductor layer pattern, the above described number of electrodes are a first electrode, a second electrode and dummy electrodes located between the first electrode and the second electrode, and the above described number of electrodes are patterned so that a protrusion is formed, in which the above described electrodes are aligned at on least one end side of at least one of the facing sides.

Display device

The present invention provides a method for manufacturing a display device which can reliably form electrodes in a thin film transistor. A method for manufacturing a display device includes the steps of: preparing a substrate having a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer; forming a drain electrode and a source electrode of a thin film transistor at least in a region where the thin film transistor is formed in a pattern in which one of the drain electrode and the source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side such that one electrode surrounds a distal end portion of another electrode as viewed in a plan view and a projecting portion is formed on a side of the connecting portion opposite to another electrode, wherein the respective electrodes are formed by selectively etching the conductor layer using a photoresist film as a mask; and etching the semiconductor layer using a deformed photoresist film which is formed by directly reflowing the photoresist film as a mask.

The present invention provides a display device which can obviate the occurrence of a leak current in a thin film transistor. In a display device including a substrate, and gate signal lines, an insulation film, semiconductor layers and conductor layers which are sequentially stacked on the substrate, the conductor layer forms at least a drain electrode which is connected to a drain signal line and a source electrode which is connected to a pixel electrode, and the semiconductor layer is formed in a pattern in which the semiconductor layer has a protruding portion which protrudes outwardly from the conductor layer at a portion thereof except for a distal end of the drain electrode as viewed in a plan view.

An active matrix type display device includes inter-pad short-circuiting lines which are connected with signal lines, terminal portions which transmit signals from an IC chip to the signal lines, and a plurality of short-circuiting lines which are arranged outside the terminal portions and inside an end surface of a substrate and are connected with a plurality of inter-pad short-circuiting lines, wherein cut regions of the inter-pad short-circuiting lines are arranged outside the terminal portions and inside the short-circuiting lines. Since repair lines and signal-line lead line do not cross each other, it is possible to perform the highly reliable repair in respective manufacturing steps.

Active matrix type display device having antistatic lines used as repair lines

A liquid crystal display device is provided with a pair of substrates which are arranged to face each other in an opposed manner and a liquid crystal layer which is sandwiched between main surfaces of a pair of substrates. On the main surface of one of the pair of substrates which faces the liquid crystal layer, pixel regions including switching elements, pixel electrodes which are connected to the switching elements and a protective film which is disposed at liquid crystal layer side of the switching elements are formed. In such a liquid crystal device, the protective film is formed by laminating the plurality of material layers which include at least a first material layer and a second material layer which is arranged closer to the liquid crystal layer side than the first material layer. Further, the second material layer exhibits resistivity which is lower than resistivity of the first material layer and higher than resistivity of silicon or semiconductor layers which constitute channels of the switching elements. Due to such a constitution, the image retention which is generated on a display screen of the liquid crystal display device can be reduced.

Liquid crystal display device and manufacturing method thereof

A microwave plasma enhanced CVD method and apparatus wherein a microwave is applied, after expanded, over a greater area than the area in which a desired thin film is to be formed. With this arrangement, uniform microwave application is assured to produce uniform plasma over a wide area. This enables realization of a large size liquid crystal display.

Thin film transistor having enhance stability in electrical

A sputtering method and apparatus for use in forming thin films on a substrate. The power output of a sputtering power source is periodically changed to a high level power and a low level power, and each film is deposited to a thickness corresponding to the integrated value of the high level power, whereby a desired thickness can be obtained in any of multilayer films having mutually different film thickness ratios.

Growing community of inventors

Mobara, Japan

Kunihiko Watanabe