Sony Corporation

Sumitomo Electric Industries, Limited

Hitachi, Ltd.

Sophia School Corporation

Other

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Kunihiko Tasai

Hiroshi Nakajima

Katsunori Yanashima

Takashi Kyono

Yohei Enya

Masaki Ueno

Ichiro Nomura

Yusuke Yoshizumi

Takamichi Sumitomo

Katsumi Kishino

Noriyuki Futagawa

Tsunenori Asatsuma

Koshi Tamamura

Sumiko Fujisaki

Takeshi Kikawa

Tetsuya Kumano

Hitoshi Nakamura

Shigetaka Tomiya

Hidekazu Kawanishi

Kota Tokuda

Takashi Tange

Eiji Nakayama

Yuusuke Nakayama

A nitride semiconductor laser device of one embodiment of the present disclosure includes a single-crystal substrate, a base layer, a sheet-shaped structure, a light emitting layer, and a resonator mirror. The single-crystal substrate extends in one direction. The base layer is provided on the single-crystal substrate and includes a nitride semiconductor. The sheet-shaped structure is provided on the base layer to stand in a direction perpendicular to the base layer. The sheet-shaped structure has an area of a side surface that is greater than an area of an upper surface. The side surface extends in a longitudinal direction of the single-crystal substrate. The sheet-shaped structure includes a nitride semiconductor. The light emitting layer is provided at least on the side surface of the sheet-shaped structure. The light emitting layer includes a nitride semiconductor. The resonator mirror is provided by a pair of end surfaces of the sheet-shaped structure that oppose each other in the longitudinal direction.

Nitride semiconductor laser device and method of manufacturing nitride semiconductor laser device

A light emitting device according to an embodiment of the present disclosure includes: a first layer including AlInGaN (0<x1<1, 0≤x2<1); a second layer that is provided on the first layer and includes AlInGaN (0<y1<1, 0≤y2<1) that is lattice relaxed with respect to the first layer; and a third layer that is provided on the second layer, includes AlInGaN (0<z1<1, 0≤z2<1) that is lattice relaxed with respect to the second layer, and includes an active layer. A lattice constant aGAN of GaN in an in-plane direction, a lattice constant al of the first layer in an in-plane direction, a lattice constant a2 of the second layer in an in-plane direction, and a lattice constant a3 of the third layer in an in-plane direction have a relationship of aGAN<a2<a1, a3.

Light emitting device using a gallium nitride (GaN) based material

A semiconductor optical device includes a laminated structure constituted of a first compound semiconductor layer of an n type, an active layer, and a second compound semiconductor layer of a p type, the active layer including at least 3 barrier layers and well layers interposed among the barrier layers, and the semiconductor optical device satisfying Eg&#x3e;Eg&#x3e;Egwhen a bandgap energy of the barrier layer adjacent to the second compound semiconductor layer is represented by Eg, a bandgap energy of the barrier layer between the well layers is represented by Eg, and a bandgap energy of the barrier layer adjacent to the first compound semiconductor layer is represented by Eg.

Semiconductor optical device

There is provided a light-emitting element including a laminated structure including a first compound semiconductor layer having a first conductivity type, a second compound semiconductor layer having a second conductivity type different than the first conductivity type, and a third compound semiconductor layer formed between the first and second compound semiconductor layers and including an active layer. A second end surface of the second compound semiconductor layer and a third end surface of the third compound semiconductor layer are formed at respective second and third angles theta2 and theta3 relative to a virtual vertical direction of the laminated structure and satisfy the following relationship: 'absolute value of thetais equal to or greater than 0 degree and smaller than absolute value of theta'.

Light-emitting element

A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of InAlGaN, where x&#x3e;0 and y&#x3e;0, the second cladding layer being made of InAlGaN, where0&#x2266;x&#x2266;about 0.02 and about 0.03&#x2266;y&#x2266;about 0.07.

Semiconductor device

A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer.

Nitride semiconductor laser, epitaxial substrate

A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding.

Nitride semiconductor light emitting device

A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.

Nitride semiconductor laser and epitaxial substrate

A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer.

Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device

A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including BeMgZnTe (0&#x3c;x1&#x3c;1, 0&#x2266;x2&#x3c;1, 0&#x3c;x3&#x3c;1, x1+x2+x3=1) and a second semiconductor layer mainly including BeMgZnTe (0&#x3c;x4&#x3c;1, 0&#x3c;x5&#x3c;1, 0&#x2266;x6&#x3c;1, x4+x5+x6=1).

An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

Growing community of inventors

Tokyo, Japan

Kunihiko Tasai