Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Kunihiko Nishimura

Eiji Yagyu

Shuichi Hiza

Masahiro Fujikawa

Keisuke Nakamura

Shigeru Matsuno

Yuki Takiguchi

Tomohiro Shinagawa

Hidetada Tokioka

Naoki Yasuda

Shuhei Nakata

Hiroaki Morikawa

Tatsuki Okamoto

Tomotaka Katsura

Yosuke Suzuki

Masato Yonezawa

Mutsumi Tsuda

Akihiro Takami

Takayuki Morioka

Akira Yamashita

Satoru Kawamoto

Koji Yoshitsugu

Kenichiro Kurahashi

Akifumi Imai

Muneyoshi Suita

Yoshinobu Hirokado

Shinya Nishimura

Daisuke Niinobe

Kimikazu Hazumi

Narihito Ota

Takashi Matsuda

A semiconductor device includes a first substrate, a semiconductor layer consisting of a nitride-based compound semiconductor, and a bonding layer bonded to the first substrate and the semiconductor layer between the first substrate and the semiconductor layer, and containing at least one of constituent elements of the nitride-based compound semiconductor.

Semiconductor device and method of manufacturing semiconductor device

A split in a dicing street in a semiconductor film is prevented. A semiconductor device includes: a first dicing street passing between a plurality of element regions on which a plurality of protective films are formed one-to-one, the first dicing street extending along a first axis; a second dicing street passing between the plurality of element regions and extending along a second axis; and a stop island disposed on the upper surface of the semiconductor film at an intersection between the first dicing street and the second dicing street, the stop island being in non-contact with the plurality of element regions. X_si>X_ds and Y_si<Y_ds are satisfied.

Semiconductor device including stop islands and method for manufacturing semiconductor device

Removal of substrates in a composite substrate is facilitated, and flaking of the composite substrate in an unintended process is prevented. A method for manufacturing a composite substrate includes: forming a first bonding material in a first surface of a first substrate; forming, in the first surface, at least one groove located more inward than a periphery in a plan view of the first substrate; forming the first bonding material along an inner wall of the at least one groove, the first bonding material not filling into space enclosed by the inner wall of the at least one groove; forming a second bonding material on a second surface of a second substrate; and bonding the first bonding material and the second bonding material together in a region except the at least one groove.

Method for manufacturing composite substrate, and composite substrate

The present invention relates to a method for manufacturing a semiconductor substrate, including: (a) preparing an epitaxial substrate having a nitride semiconductor layer formed on a first main surface of a growth substrate and preparing a first support substrate, forming a resin adhesive layer between the first main surface of the growth substrate and a first main surface of the first support substrate, and bonding the epitaxial substrate to the first support substrate; (b) thinning a second main surface of the growth substrate; (c) forming a first protective thin film layer on the thinned growth substrate; (d) forming a second protective thin film layer on the first support substrate; (e) removing the thinned growth substrate; (f) bonding a second support substrate onto the nitride semiconductor layer; and (g) removing the first support substrate and the resin adhesive layer.

Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate

An object is to provide a technique capable of suppressing defectives in semiconductor elements. A manufacturing method of a semiconductor device includes a step of forming a laminated body in which an adhesive protective layer, an adhesive layer, a peeling layer, and a support substrate are disposed in this order on a first main surface of the semiconductor substrate, a step of removing the semiconductor substrate other than a portion where a plurality of circuit elements are formed, a step of bonding the portion where the circuit elements are formed to a transfer substrate, a step of removing the peeling layer, the support substrate and the adhesive layer, a step of removing the adhesive protective layer by chemical treatment, and a step of dividing the plurality of circuit elements.

Method of manufacturing semiconductor element

The semiconductor manufacturing device includes: a lower substrate support base configured to support a diamond substrate; an upper substrate support base configured to support a semiconductor substrate; a support base drive unit configured to move the lower substrate support base and the upper substrate support base to bring the diamond substrate and the semiconductor substrate into close contact with each other under a state in which a pressure is applied to the diamond substrate and the semiconductor substrate in a thickness direction; and a second mechanism configured to deform a surface of the upper substrate support base opposed to the lower substrate support base so that a surface of the semiconductor substrate opposed to the diamond substrate forms a parallel surface or a parallel plane with respect to a surface of the diamond substrate opposed to the semiconductor substrate.

Semiconductor manufacturing method and semiconductor manufacturing device

A thermoelectric conversion module includes a plurality of thermoelectric conversion elements formed on a first main surface of an inner tube, and a plurality of projections formed on a second main surface of an outer tube. The thermoelectric conversion element includes an interconnection, and an electrode formed at a first distance from the second main surface in a second direction. When the thermoelectric conversion module is seen from a first direction, the projections include a first projection and a second projection formed at a spacing therebetween in a third direction. A shortest distance between a first lateral surface and a top portion of the first projection and a shortest distance between a second lateral surface and a top portion of the second projection are smaller than the first distance.

Thermoelectric conversion module and method of manufacturing the same

A heat treatment method of the present invention includes mounting a plurality of semiconductor wafers upright on a treatment boat in parallel to each other, inserting the treatment boat in a space above an injector located in a tube to be oriented to plane surfaces of the semiconductor wafers in parallel to an extending direction of the tube, and heating the tube while continuously supplying source gas into the tube through openings of the injector.

Heat treatment method of semiconductor wafers, manufacturing method of solar battery, and heat treatment device

To provide a conveying unit that holds a workpiece and conveys the workpiece at a constant rate in one direction, a laser oscillator that emits a pulsed laser beam, a splitter that splits a pulsed laser beam into a pattern having a predetermined geometric pitch, a first deflector that scans the split pulsed laser beam in the other direction substantially orthogonal to the one direction, a second deflector that adjusts and deflects the split pulsed laser beam deflected by the first deflector on the surface to be processed in the one direction so as to scan the resultant pulsed laser beam onto the surface to be processed at a constant rate equal to a rate at which the workpiece is conveyed, and a condenser that condenses the split pulsed laser beam deflected by the second deflector onto the surface to be processed.

Laser processing apparatus, laser processing method, and manufacturing method of photovoltaic device

A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film.

Method for roughening substrate surface and method for manufacturing photovoltaic device

Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 &#x3bc;m or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film.

Method for manufacturing photovoltaic device

The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.

Photovoltaic device and manufacturing method thereof

The step of forming an opening in an insulating layer to expose a carbon nanotube layer is performed using two types of dry etching different from each other in conditions. In the first-stage dry etching step, a hole is formed in the insulating layer to such a depth as not exposing the carbon nanotube layer. Thereafter, in the second-stage dry etching step, a bottom surface portion of the hole is removed, thus exposing an upper surface of the carbon nanotube layer. A method of manufacturing an electron emission source capable of improving performance of an electron emission portion is thus obtained.

Method of manufacturing electron emission source

A cold cathode display device which has a small thickness and a large display area, in which an anode can be sufficiently distant from an extraction electrode to ensure a breakdown voltage and an electron beam diameter can be made sufficiently smaller than the size of a phosphor, and a method of manufacturing such a cold cathode display device. A focus electrode is added to a conventional cold cathode display device. The focus electrode is located such that extraction electrodes and cathodes are interposed between the focus electrode and a back substrate. The focus electrode includes electron passage windows located opposite the cathodes and electron passage windows. The focus electrode is attached to, and supported by, the extraction electrodes via an insulating material with a distance being maintained between the focus and extraction electrodes.

Growing community of inventors

Tokyo, Japan

Kunihiko Nishimura