Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

The University of Tokyo

Stichting Imec Nederland

Dainichi Machine and Engineering Co., Ltd.

Kunihiko Nakamura

Yasuyuki Naito

Yoshito Nakanishi

Masaki Fujikane

Naoki Tambo

Kouhei Takahashi

Keiji Onishi

Takehiko Yamakawa

Norisato Shimizu

Tomohiro Iwasaki

Hideki Kawakatsu

Akinori Hashimura

Hiroshi Nakatsuka

Michiaki Matsuo

Takashi Kawasaki

Tomohide Kamiyama

Gijun Idei

Michael Renaud

Kosei Ohura

Robertus T F Van Schaijk

An infrared sensor is provided with an infrared light receiver, a signal pathway, and a first member. The infrared light receiver has a structure in which at least two materials having different coefficients of thermal expansion are layered. The signal pathway includes a first signal pathway allowing passage of a driving signal to be applied to the infrared light receiver. The driving signal has a current value equal to or greater than a prescribed magnitude, and the infrared light receiver deforms in response to the application of the driving signal to the infrared light receiver, thereby at least a portion of the infrared light receiver contacting the first member.

Infrared sensor and method of controlling infrared sensor

A temperature sensor is a temperature sensor using a MEMS resonator, and includes: a MEMS resonator; a sweeper that sweeps a frequency of an excitation signal for a vibrator of the MEMS resonator in a predetermined sweep direction, and outputs the excitation signal swept to the MEMS resonator; a discontinuity point detector that obtains a vibration state information signal, which is a characteristic quantity expressing a vibration state of the vibrator based on the excitation signal, from the MEMS resonator, and detects a detection value that is (i) a frequency of the excitation signal when the vibration state information signal obtained changes discontinuously or (ii) a time corresponding to the frequency; and a converter that determines a physical quantity acting on the MEMS resonator based on the detection value detected.

Resonant sensor using MEMS resonator, and detection method by resonant sensor

A thermoelectric conversion device includes: a first thermoelectric conversion module, a first insulating layer, and a second thermoelectric conversion module. The first (second) thermoelectric conversion module includes one or two or more thermoelectric conversion elements, a first (third) connection electrode, and a second (fourth) connection electrode. The thermoelectric conversion elements of the first (second) thermoelectric conversion module are electrically connected to the first (third) connection electrode and the second (fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes. A through direction of the plurality of through holes in this crystal structure is substantially parallel to a stacking direction of the first thermoelectric conversion module, the first insulating layer, and the second thermoelectric conversion module.

Thermoelectric conversion device, method for controlling thermoelectric conversion device, method for cooling and/or heating object by using thermoelectric conversion device, and electronic device

A thermoelectric conversion device includes: an insulating layer; and a thermoelectric conversion module disposed on the insulating layer. The thermoelectric conversion module has a first thermoelectric conversion region and a second thermoelectric conversion region. The first(second) thermoelectric conversion region includes one or two or more thermoelectric conversion elements, a first(third) connection electrode, and a second(fourth) connection electrode. The thermoelectric conversion elements of the first(second) thermoelectric conversion region are electrically connected to the first(third) connection electrode and the second(fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes. A through direction of the plurality of through holes in this crystal structure is substantially parallel to a direction perpendicular to a principal surface of the insulating layer.

The present disclosure provides a novel multilayer body. The multilayer body of the present disclosure includes a first phononic crystal layer and a second phononic crystal layer disposed on or above the first phononic crystal layer. The first phononic crystal layer has a first phononic crystal structure including a plurality of regularly arranged first through holes. The second phononic crystal layer has a second phononic crystal structure including a plurality of regularly arranged second through holes. The through direction of the plurality of first through holes in the first phononic crystal layer is substantially parallel to the through direction of the plurality of second through holes in the second phononic crystal layer.

Multilayer body and crystalline body

A gas constituent measuring apparatus includes a cell that draws in a first gas to be measured, gas sensors that respond to one or more types of constituent gases in the cell, a regulator that controls humidity in the cell, a pump, a humidity sensor that detects the humidity in the cell, and an integrated circuit. The integrated circuit controls the regulator and pump on the basis of a detection result of the humidity sensor so that the humidity is within a predetermined range before the first gas is drawn into the cell or after the first gas is discharged from the cell, acquires first response values from the gas sensors with humidity being controlled, acquires second response values from the gas sensors with the first gas being in the cell, and determines concentrations of the one or more types of constituent gases from the first and second response values.

Gas constituent measuring apparatus

A gas sensor includes a substrate, a support layer, a base layer, a heater layer disposed on or above the base layer, a gas sensing layer that is disposed on or above one of the heater layer and the base layer and that has a gas concentration dependent electrical impedance, and a detection electrode that is electrically connected to the gas sensing layer and that detects the impedance of the gas sensing layer. The substrate has a cavity and an opening formed by the cavity. The support layer is disposed on the substrate so as to cover at least an entire periphery of the opening. The base layer is supported by the support layer above the cavity so as to be separated from the substrate. A portion of the support layer in contact with the cavity has a first phononic crystal structure structured by a plurality of regularly arranged through-holes.

Gas sensor

Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.

Infrared sensor and infrared sensor array

A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.

Thermoelectric conversion element and thermoelectric conversion device

An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.

Infrared sensor, infrared sensor array, and method of manufacturing infrared sensor

An infrared sensor according to the present disclosure includes base substrate, infrared receiver, and beam. The beam includes connective portion connecting with the base substrate and/or a member on the base substrate, and separated portion separated from the base substrate. The infrared receiver and the beam are joined with each other at the separated portion. The infrared receiver is supported by the beam in a state where the infrared receiver is separated from the base substrate. The beam includes junction part joined to the infrared receiver, and section positioned between junction part and the connective portion, and section includes a phononic crystal structure defined by a plurality of through holes orderly arranged. The crystal structure includes a first domain and a second domain that are phononic crystal domains. The first domain includes, in a plan view, a plurality of through holes arranged orderly in a first direction, while the second domain includes, in a plan view, a plurality of through holes arranged orderly in a second direction that is different from the first direction. The infrared sensor according to the present disclosure has enhanced responsivity.

Infrared sensor and phononic crystal

In conventional non-destructive inspection devices using magnetism, the subject of inspection was limited to the surface layer of the test object as a result of the skin effect, and it was not possible to perform flaw detection inspection at the interior or reverse surface of thick-structured test objects. The effect of the surface effect was eliminated by imparting an external signal canceling the detection output of the test object surface layer from the detection output of a magnetic field resulting from eddy currents induced in the test object. As a result, it has become possible to extract the detection output of the test object interior that had been masked by the detection output of the test object surface layer, and it has become possible to perform thickness inspection and flaw detection of the reverse surface and interior or a test object.

Nondestructive inspection device using alternating magnetic field, and nondestructive inspection method

A vibration power generator comprises: a fixed substrate; a vibrating body having a surface opposed to the fixed substrate, the vibrating body being vibratable to the fixed substrate; electret electrodes aligned in a vibration direction on one of the surface of the fixed substrate and the surface of the vibrating body; and first fixed electrodes and second fixed electrodes alternately aligned in the vibration direction on the other thereof, wherein when the vibrating body is at a resting position, each of the electret electrodes overlaps with both electrodes of a corresponding fixed electrode pair, the corresponding fixed electrode pair being one of the first fixed electrodes and one of the second fixed electrodes that are opposed to the electret electrode, and when the vibrating body is not at a resting position, each of the electret electrodes always overlaps with at least one electrode of the corresponding fixed electrode pair.

Vibration power generator

A pressure sensor including: a MEMS resonator; a sweeping unit which sweeps a frequency of an excitation signal in a predetermined direction of sweeping, over a predetermined frequency range including a resonance frequency fof a vibrator in the MEMS resonator, while outputting the excitation signal to the MEMS resonator; an integrating unit which inputs a vibrating-state information signal as a characteristic amount indicative of a vibrating state of the vibrator from the MEMS resonator while the sweeping unit sweeps the frequency, integrates a plurality of the vibrating-state information signals at different frequencies of the excitation signal, and outputs the integrated value; and a conversion unit adapted to determine a pressure acting on the MEMS resonator, based on the integrated value.

Pressure sensor using MEMS resonator

In a MEMS device having a substrate, a sealing membrane, and a movable portionof beam and an electrodewhich have a region wherein they overlap with a gap in perpendicular to a substratesurface, a first cavityis on the side of the movable portionin the direction perpendicular to the surface of the substrate, and a second cavity is the other cavity, and an inner surface a of a side wall A in contact with the electrode, of the first cavity, is positioned more inside than an inner surface b of a side wall B in contact with the electrode, of the second cavity, in the direction parallel to the substrate surface, such that the movable portiondoes not collide with the electrodewhen mechanical stress is applied from outside to the sealing membrane

Growing community of inventors

Osaka, Japan

Kunihiko Nakamura