Fujitsu Corporation

Kunihiko Nagase

Satoru Mihara

Naoki Nishida

Soichiro Ozawa

Masaaki Aoyama

A method of fabricating a semiconductor device includes the steps of forming a resist pattern on a conductor layer, exposing the resist pattern to any of a plasma of a rare gas, a plasma of a mixture of a rare gas and a fluorine-containing gas, and a plasma of N.sub.2, and applying a dry etching process to the conductor layer while using the resist pattern as a mask.

Dry etching process and a fabrication process of a semiconductor device

Ashing process of a resist pattern used in a semiconductor device manufacturing method is conducted by exposing the resist, the wirings, and their peripheral regions to a first atmosphere which includes a first product obtained by plasmanizing a gas containing water at a rate of more than 30 flow rate %, and placing the resist in a second atmosphere which includes a second product obtained by plasmanizing an oxygen mixed gas which contains an oxygen gas as a principal component before or after or before and after the exposing step.

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Kawasaki, Japan

Kunihiko Nagase