Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Panasonic Corporation

Kunihiko Kanazawa

Noriyuki Yoshikawa

Kazuki Tateoka

Akihisa Sugimura

Hideki Takehara

Seiichi Nakatani

Toshio Ishizaki

Hiroaki Kosugi

Haruhiko Koizumi

Hikaru Ikeda

Masaru Kazumura

Yoshishige Yoshikawa

Masahiro Hagio

Shiro Tohmori

Satoshi Makioka

Shutaro Nanbu

Shunji Ogata

A high-frequency circuit device is provided that achieves cost reduction and reduction in power consumption and does not require an additional high-frequency amplifier even when a transmission frequency band is newly added. The high-frequency circuit device has a configuration including a transmission amplifier circuit for transmitting high-frequency power from an antenna, which includes at least one high-frequency amplifier for a wide frequency band that amplifies signals in a plurality of transmission frequency bands differing by not less than 200 MHz from each other, a duplexer that is provided for performing simultaneous transmission/reception, upstream and downstream switch circuits in the direction of transmission that are provided so as to sandwich the duplexer between the high-frequency amplifier for a wide frequency band and the antenna and are switched on when the simultaneous transmission/reception is performed, and a power supply amplitude modulator that supplies an amplitude modulation voltage to a power supply terminal of the transmission amplifier circuit.

High-frequency circuit device

A high-frequency circuit device is provided that is conformable to both of the TDMA system and the CDMA system as well as a plurality of frequency bands and achieves low cost and low power consumption. The high-frequency circuit device has a configuration including a transmission amplifier circuit for transmitting high-frequency power from an antenna that is composed of a high-frequency amplifier that is shared in the TDMA system and the CDMA system, a duplexer that is provided for performing simultaneous transmission/reception according to the CDMA system, upstream and downstream switch circuits in the direction of transmission that are provided so as to sandwich the duplexer between the transmission amplifier circuit and the antenna and are switched on when the simultaneous transmission/reception is performed according to the CDMA system, and a bypass switch circuit that bypasses the upstream and downstream switch circuits and the duplexer.

In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.

High-frequency module and method for manufacturing the same

A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.

High-frequency semiconductor device

The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate having circuit patterns on opposed surfaces. The high thermo conductive ceramic substrate has on one surface a first circuit board of at least one layer having a first cavity structure, and on the other surface a second circuit board of at least one layer having a second cavity structure. A first active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode is integrated with the surface of the second circuit board, and the first circuit board surface is equipped with a cap or sealed with resin. A heat dissipation via is formed on the second circuit board, the high thermo conductive ceramic substrate and the external electrode on the surface of the second circuit board are connected thermally to each other, and heat of at least one active element selected from the first active element and the second active element is dissipated outward through the high thermo conductive ceramic substrate, the heat dissipation via and the external electrode on the surface of the second circuit board. The semiconductor device is downsized while securing transverse strength and heat dissipation characteristics of a heat-generating semiconductor element.

Semiconductor device

The present invention provides a high-frequency signal amplification device, in which insufficient isolation is compensated and which is made smaller, as well as a method for manufacturing the same. A substrate, in which a plurality of metal conductors arranged between the plurality of dielectric layers and/or at a surface of the dielectric multilayer substrate are exposed at a first region of the surface, and a metal surface that is arranged at a position lower than the plurality of metal conductors is exposed from a remaining portion of the first region not including the region on which the plurality of metal conductors are arranged, is used as a dielectric multilayer substrate. The semiconductor element is mounted in the first region such that a high-frequency signal is input into the semiconductor element via at least one of the plurality of metal conductors, and an amplified high-frequency signal is output from the semiconductor element via at least another one of the plurality of metal conductors.

Method of fabricating a high frequency signal amplification device

High-frequency signal amplification device

A transistor includes a source region; a drain region; a channel region interposed between the source region and the drain region; and at least a first gate electrode and a second gate electrode provided on the channel region. At least one of the first and second gate electrodes traverses substantially an entire width of the channel region. At least another one of the first and second gate electrodes traverses a part of the width of the channel region.

Field effect transistor and power amplifier including the same

Field effect transistor

A transistor includes: a source region; at least two drain regions; channels respectively disposed between the source region and each of the at least two drain regions; and a gate electrode provided on each of the channels. The at least two drain regions are electrically isolated from one another; and a drain electrode is provided on each of the drain regions.

Transistor and power amplifier

A multilayer structure composed of a plurality of substrates stacked in layers is provided with a cavity formed by partially removing some of the substrates. A semiconductor chip internally provided with an active component such as an FET is mounted on the bottom face of the cavity. Passive components including a high-frequency matching circuit and a bias circuit are distributed in the uppermost layer, lowermost layer, and middle layer lying between the substrates of the multilayer structure. For example, a chip component partially composing the high-frequency matching circuit is disposed in the uppermost layer, while the bias circuit is disposed in the middle layer. Since only a reduced number of substrates underlie the semiconductor chip internally provided with the active component primarily serving as a heating element, an excellent heat dissipating ability is retained even when each of the substrates of the multilayer structure is composed of a versatile material such as alumina. By utilizing the characteristic, there can be implemented a high-frequency integrated circuit device exhibiting a high degree of integration and usable in mobile communication such as a portable telephone.

High-frequency integrated circuit device having a multilayer structure

A plurality of ceramic substrates are stacked in layers to form a multilayer structure. A semiconductor chip having an FET or the like is mounted on the uppermost first ceramic substrate to form an RF matching circuit. A ground layer is formed on the second ceramic substrate, i.e., in a middle layer, thereby preventing the interference of electric signals between circuit components mounted in the respective layers upper and lower than the ground layer. A bias circuit is formed on the top face of the third ceramic substrate, while a back-face ground electrode is formed on the back face of the third ceramic substrate. A leadless electrode is formed over the side faces of the respective ceramic substrates and the back face of the lowermost third ceramic substrate. By utilizing the high heat conductivity and proper dielectric constant of aluminum nitride, the overall RF power amplifying circuit device can be miniaturized at lower cost.

RF power amplifying circuit device

In a dual-mode radio telephone transmitter operative in both an analog modulation mode based on the FDMA system and a digital modulation mode based on the TDMA system, a DC bias voltage Vdd to be applied to a power amplification circuit is varied in accordance with the type of modulation, so that the input/output characteristics of the power amplification circuit can be optimized. To this end, a micro processor controls a switch interposed between the power amplification circuit and a positive DC power unit in such a manner that the DC bias voltage Vdd is 4.8 V for the FDMA mode, while the DC bias voltage Vdd is 6.0 V for the TDMA mode. The value of another DC bias voltage Vgg in the power amplification circuit is fixed. The value of the DC bias voltage Vdd is set higher in the TDMA mode than in the FDMA mode; thus, it becomes possible to increase the power added efficiency in the FDMA mode, without adversely affecting high linearity and high efficiency in the TDMA mode.

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Mukou, Japan

Kunihiko Kanazawa