Nec Corporation

Other

Kunihiko Ishihara

Kazuhiko Hayashi

Masafumi Nakada

Nobuyuki Ishiwata

Keishi Ohashi

Junichi Fujikata

Tsutomu Ishi

Jun-Ichi Fujikata

Hidefumi Yamamoto

Kiyokazu Nagahara

Shigeru Mori

Atsushi Kamijo

Hisanao Tsuge

Hiroaki Honjou

Hisao Matsutera

Masatoshi Iji

Kiyohiko Toyama

Eizo Fukami

Minoru Yoshikawa

Junichi Miyamoto

Yoshinori Miyamoto

Masaki Chiba

Tamaki Toba

Hiroaki Honjo

Yutaro Shimode

Kivokazu Nagahara

An air conditioner includes: a turbo compressor that compresses a heat medium; a heat exchanger that exchanges heat of the heat medium supplied from the turbo compressor with an atmosphere; and a supply flow path and a discharge flow path that connect the turbo compressor and the heat exchanger. At least one of the supply flow path and the discharge flow path includes piping, and the piping includes a gas barrier layer that covers a surface of a synthetic resin.

Air conditioner and method of manufacturing piping

A cellulose resin composition containing a cellulose resin (A) and a high refractive-index organic material (B), in which the cellulose resin (A) is a cellulose derivative obtained by substituting at least part of hydrogen atoms of hydroxy groups of a cellulose with an acyl group having 2 to 4 carbon atoms and a long-chain organic group having 7 or more carbon atoms, and the mass fraction (B/A) of the high refractive-index organic material (B) to the cellulose resin (A) falls within the range of 10/90 to 70/30.

Cellulose resin composition, molded body and product using same

A cellulose resin composition comprising a cellulose resin, a high refractive-index organic material and a carbon black, in which the cellulose resin is an acylated cellulose obtained by substituting at least part of hydrogen atoms of hydroxy groups of a cellulose with an acyl group having 2 to 4 carbon atoms, the carbon black is an acidic carbon black, the mass fraction (B/A) of the high refractive-index organic material (B) to the cellulose resin (A) falls within the range of 10/90 to 70/30, and the content of the carbon black (C) relative to the total of the cellulose resin composition falls within the range of 0.05 to 10% by mass.

In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.

Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer

A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A first magnetic layer is provided on the lower conductive layer. On the first magnetic layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

Magneto-resistance effect element and magneto-resistance effect head

A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. Furthermore, an upper conductive layer is provided on the upper layer and an insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

A magneto-resistance effect element is adapted that a non-magnetic layer (9, 18), a free layer (3, 19), another non-magnetic layer (4, 25), a fixed layer (5, 26), and a fixing layer (6, 27) are formed vertically symmetric with respect to a first magnetic layer (8), to which a vertical bias magnetic field is applied from an underlying layer (2) for a vertical bias layer (2). The magneto-resistance effect element operates in CPP mode. Generally, the free layer is unavoidably subjected to the influence of a circular electric magnetic field caused by a current flowing perpendicularly to the film surface. However, in the magneto-resistance effect element, the influence of the electric magnetic field to which the free layer (3) is subjected is opposite to that of the electric magnetic field to which the second free layer (19) is subjected, thereby canceling out the influences as a hole.

A magneto-resistance effect element is provided and includes a lower conductive layer, a pattern provided thereon and made up of a fixed layer having a pinned orientation of magnetization, a first non-magnetic layer provided on the fixed layer, a free layer provided on the non-magnetic layer and having an orientation of magnetization varied by a magnetic field applied thereto, a first magnetic layer provided on the free layer; and a vertical bias layer, provided on the first magnetic layer, for applying a magnetic field to the first magnetic layer, and a sense current for detecting a change in electrical resistance of the non-magnetic layer flows substantially in perpendicular relation to the non-magnetic layer. The pattern is buried in an insulation layer with the vertical bias layer of the pattern being exposed on an upper surface of the insulation layer.

Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer

A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed inmediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

A magnetoresistive effect sensor uses a shielded-type magnetoresistive effect element using a magnetoresistive effect film formed by a basic configuration of a combination of a free layer, a barrier layer formed on the free layer, and a fixed layer formed on the barrier layer, wherein a sensing current flows substantially perpendicular to the magnetoresistive effect film, and wherein an amorphous material or a microcrystalline material is used in a lower shield.

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Tokyo, Japan

Kunihiko Ishihara