Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Kunihiko Hikichi

Atsushi Yamamoto

Junji Yamane

Hiroyuki Itou

Minoru Ishida

Nobutoshi Fujii

Takashi Sakairi

Suguru Saito

Hiroshi Tazawa

Hiroyasu Matsugai

Masahiko Shimizu

Yusuke Moriya

Koichi Amari

Koichi Takeuchi

Tsuyoshi Okazaki

Toshiaki Shiraiwa

Keiji Ohshima

Keiichi Maeda

Tadayuki Dofuku

Tomotaka Nishikawa

Tsutomu Shimayama

Yoshihiko Nagahama

Tomoaki Honda

Kazuhiro Tamura

Toshihiro Kurobe

Takuma Matsuno

Yosuke Takita

Yuu Kawaguchi

Yuuji Adachi

Hideki Kawaguchi

Seiya Haraguchi

Takayoshi Masaki

Takuya Fujino

Atsushi Tanaka

Toshiaki Okada

Kouta Fukumoto

Yuuki Sakai

Chiho Araki

Katsunori Dai

Shunsuke Narui

A light-emitting element and a display device capable of improving the light emission property are provided. Each of a plurality of anode electrodes () is provided for a corresponding pixel. The pixel-isolating insulation film () has an opening () exposing corresponding one of the plurality of anode electrodes () to outside, and has an eave (B) in the middle of a thickness direction of an inner wall of the opening (). An organic layer () includes a CGL () cut by the eave (B) of the pixel-isolating insulation film (), and covers the opening (). A cathode electrode () is disposed on a surface of the organic layer (), the surface being a surface on the opposite side of the anode electrode ().

Light-emitting element and display device with insulating layer that includes eaves

An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Electrode structure, liquid crystal display device, projective display device, and method of manufacturing electrode structure

An imaging device includes a light shield that has light shielding walls and a plurality of light transmissive parts in a plurality of apertures between the light shielding walls and a light-receiving element layer in which a large number of light-receiving elements that perform photoelectric conversion corresponding to incident light inputted through the light transmissive parts of the light shield are arranged to acquire image information that has passed through optical elements that are different between the adjacent light transmissive parts. Further, the image information that passed through optical elements being different for every one of the light transmissive parts adjacent is acquired, and therefore, the sensor areas of the light receiving element is utilized effectively.

Imaging device utilizing sensor area of photoelectric conversion elements corresponding to incident light passed through optical elements including a layer of polarizers of horizontal and vertical directions and quarter wave plates

The present disclosure relates to a solid-state image pickup device and a method for manufacturing the same, and an electronic apparatus, capable of suppressing color mixture, stray light, reduction in contour resolution, and the like. A solid-state image pickup device includes: a light shielding body having light shielding walls and a light transmitting portion formed in an opening portion between the light shielding walls; a first light shielding layer which is formed on an incident surface side of light of the light shielding body, and has an opening portion narrower than the opening portion of the light shielding body for each of the opening portions of the light shielding body; a microlens provided on the incident surface side of light of the light shielding body and for each of the opening portions of the first light shielding layer; a light receiving element layer in which a large number of light receiving elements which perform photoelectric conversion in accordance with incident light condensed by the microlens and input via the light transmitting portion of the light shielding body are arranged; and a second light shielding layer which is formed on the light receiving element layer side of the light shielding body, and has an opening portion narrower than the opening portion of the light shielding body and wider than the first light shielding layer for each of the opening portions of the light shielding body. The present disclosure can be used for a compound eye optical system, for example.

Solid-state image pickup device and method for manufacturing the same, and electronic apparatus

A positional shift of a lens of a stacked lens structure is reduced. A plurality of through-holes is formed at a position shifted from a first target position on a substrate according to a first shift. A lens is formed on an inner side of each of the through-holes using a first mold in which a plurality of first transfer surfaces is disposed at a position shifted from a predetermined second target position according to a second shift and a second mold in which a plurality of second transfer surfaces is disposed at a position shifted from a predetermined third target position according to a third shift. The plurality of substrates having the lenses formed therein is formed according to direct bonding, and the plurality of stacked substrates is divided. The present technique can be applied to a stacked lens structure or the like, for example.

Stacked lens structure, method of manufacturing the same, electronic apparatus, mold, method of manufacturing the same, and substrate

An electronic device has a mounted image sensor including a light shielding body having light shielding walls and light transmitting portions each formed in an opening between the light shielding walls, a first light-shielding layer formed on a light incident surface side of the light shielding body and having an opening narrower than the opening of the light shielding body for each of the openings of the light shielding body, a microlens provided for each of the openings of the first light-shielding layer on the light incident surface side of the light shielding body, and a light receiving element layer with an array of a large number of light receiving elements. The present disclosure can be used for, for example, a compound-eye optical system.

Image sensor and electronic device

A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical transfer register is provided for each of columns of the light receiving portions. The first and third transfer electrodes of the first layer are alternately arranged in a charge transfer direction, and the adjacent two of the first and third transfer electrodes extend in parallel to each other between the light receiving portions. With this solid-state image pickup device, the accumulated charge capacity of each transfer region composed of the adjacent transfer electrodes for two-phases is equalized and the area of the light receiving portion is increased irrespective of variations in processed dimension between the transfer electrodes.

Solid-state image pickup device and fabrication method thereof

A method of fabricating a solid-state image pickup device comprising forming mask patterns corresponding to patterns of first and third transfer electrodes, which are to be alternately arranged in each vertical transfer register formation region and which are to extend in parallel to each other between light receiving portions adjacent to each other in the vertical direction, on a first electrode material layer. The method also includes forming side walls on each of the mask patterns. The method further includes patterning the first electrode material layer via the mask patterns having the side walls, to form first and third transfer electrodes formed by the first layer. The method yet further includes forming second transfer electrodes by a second electrode material layer via an insulating film in such a manner that each of said second transfer electrodes is disposed between the first and third transfer electrodes of the first layer in said vertical transfer register formation region and between the light receiving portions. The method still further includes forming fourth transfer electrodes by a third electrode material layer via an insulating film in such a manner that each of the fourth transfer electrodes is between the third and first transfer electrodes of the first layer in the vertical transfer register formation region and between the light receiving portions.

A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical transfer register is provided for each of columns of said light receiving portions. The first and third transfer electrodes of the first layer are alternately arranged in a charge transfer direction, and the adjacent two of the first and third transfer electrodes extend in parallel to each other between the light receiving portions. With this solid-state image pickup device, the accumulated charge capacity of each transfer region composed of the adjacent transfer electrodes for two-phases is equalized and the area of the light receiving portion is increased irrespective of variations in processed dimension between the transfer electrodes.

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Kanagawa, Japan

Kunihiko Hikichi