Kyocera Corporation

Sony Corporation

Kunihide Shikata

Yoshio Ohashi

Kiyotaka Nakamura

Yucong Wang

Takeshi Kubota

Shugo Onitsuka

Toshihiko Maeda

Kazuo Watada

Tsuneo Muchi

Keiichi Sekiguchi

Shunji Mikaki

Kenichi Nagae

Hiroaki Seno

Yuuichi Abe

Masamichi Shingu

Takehisa Higa

Kazuhide Kusano

Akira Furuzawa

Akifumi Sata

Masaki Hayashi

Takefumi Nakanishi

Toshihiko Uemura

Wang Yucong

Teruaki Katagiri

Akira Furusawa

Eisuke Hirano

Satoshi Kiyota

The light shielding member of the present disclosure includes an aluminum oxide ceramics including an oxide of titanium whose composition formula is shown as TiO(1≤x<2), and a total content of Fe, Ni, Co, Mn and Cr is 260 mass ppm or less.

Light shielding member

The circuit board includes a ceramic sintered body and a metal wiring layer provided on at least one primary surface thereof with a glass layer interposed therebetween, and when the cross section of the circuit board perpendicular to the primary surface of the ceramic sintered body is viewed, the ratio of the length of an interface between the glass layer and the metal wiring layer to a length of the glass layer in a direction along the primary surface is 1.25 to 1.80.

Circuit board and electronic apparatus including the same

A circuit board and an electronic device having the circuit board that includes a ceramic sintered body, a through conductor and a metal wiring layer. The ceramic sintered body includes a through hole penetrating from a first main surface to a second main surface thereof. The through conductor is in the through hole and has first and second ends. The metal wiring layer covering the first end and electrically connected to the through conductor. The through conductor includes: a first portion having a hollow cylinder shape, in contact with an inner wall of the through hole and extending from the first end to the second end; and a second portion having a columnar shape and disposed inside the first portion. The second portion has an average grain size of the metal larger than that in the first portion.

Circuit board and electronic device including same

A circuit board is provided with a metal wiring layeron at least one principal surface of a ceramic sintered body, wherein the above-described metal wiring layer includes a first regionwhich is in contact with the principal surface and which contains a glass component and a second regionwhich is located on the first regionand which does not contain a glass component, the thickness of the first regionis 35% or more and 70% or less of the thickness of the metal wiring layer, and the average grain size in the first regionis smaller than the average grain size in the second region

Circuit board and electronic apparatus provided with the same

A ceramics substrate for mounting a light-emitting element includes a ceramic sintered body, the ceramic sintered body having a mounting section on which a light-emitting element is mounted, in a surface portion on a mounting section side of the ceramic sintered body, a ratio of crystal grains having a crystal grain size of 0.2 &#x3bc;m to 1.0 &#x3bc;m in equivalent circle diameter being in a range of 45% to 80%, a ratio of crystal gains having a crystal grain size of 2.0 &#x3bc;m to 6.0 &#x3bc;m in equivalent circle diameter being in a range of 5% to 15%, and a ratio of crystal grains having a crystal grain size of more than 6.0 &#x3bc;m in equivalent circle diameter being 2.7% or less.

Ceramics substrate for mounting light-emitting element and light-emitting device

Provided are a zirconia sintered body that has excellent mechanical characteristics, as well as semiconductivity that can allow static electricity to escape at an appropriate rate, and a manufacturing method that can manufacture the same at lower cost than in the past. The zirconia sintered body is made of 66-90 parts by weight of zirconia that contains a stabilizer, and a total of 10-34 parts by weight of iron, chromium and titanium oxides. Of the iron, chromium and titanium oxides, the proportion of iron oxide is 70-99.5 wt %, the proportion of chromium oxide is 0.4-20 wt % and the proportion of titanium oxide is 0.1-10 wt %. The combined proportion of tetragonal and cubic crystals in the zirconia crystal phase is 90% or more and the mean crystal grain size of the zirconia is 0.3-0.5 &#x3bc;m. The mean crystal grain size of the iron, chromium and titanium oxides is 0.5-2.0 &#x3bc;m. It has excellent mechanical characteristics, as well as semiconductivity.

Zirconia sintered body and production method the same

The present invention provides a dense, abrasion resistant ceramic. The ceramic of the invention includes alumina crystal particles and a grain boundary phase. The invention also includes an abrasion resistant sliding member and a pump comprising the same.

Abrasion-resistant sintered body, sliding member, and pump

A biomedical member having high strength, high toughness and high hardness and an artificial joint that uses the same are provided. In addition, a biomedical member that exhibits high wear resistance even in in vivo environment and an artificial joint are provided. Such a composite ceramic is used that contains 65% by weight or more AlO, 4 to 34% by weight of ZrOand 0.1 to 4% by weight of SrO, while Sr forms a solid solution with part of the ZrOgrains. The composite ceramics further contains TiO, MgO and SiOas sintering additives, while controlling the amounts to 0.20% by weight or more SiO, 0.22% by weight or more TiOand 0.12% by weight or more MgO, and the total amount of SiO, TiOand MgO within a range from 0.6 to 4.5% by weight.

Biomedical member and method for producing the same

Composite ceramics having a high strength, a high toughness and an excellent abrasion resistance, and a method of producing the same. The composite ceramics comprises 10 to 30 mass % of a zirconia crystal phase including Ce-stabilized zirconia crystal particles which contain CeOin an amount of 9 to 12 mol % and Y-stabilized zirconia crystal particles which contain YOin an amount of 2.8 to 4.5 mol %; and 70 to 90 mass % of an alumina crystal phase, the zirconia crystal phase having an average crystal particle size of not larger than 1 &#x3bc;m.

Alumina/zirconia ceramics and method of producing the same

Alumina/zirconia ceramics containing AlOin an amount of not less than 65 mass % and ZrOin an amount of 4 to 34 mass %, and further containing TiO, MgO and SiO. The ceramics effectively suppresses the growth of shape isotropic particles of alumina, suppresses the growth of zirconia particles, and has a high strength and a high hardness. Besides, the ceramics containing SrO features a high fracture toughness.

A thermally conductive compound which comprises 15 to 60 volume % of thermoplastic carrier resin consisting of a copolymer of a plasticizer with ethylene or of a polymer of the plasticizer, polyethylene and the copolymer, 40 to 85 volume % of thermally conductive filler particles dispersed in the carrier resin, and 0.5 to 5 weight % (for the filler particles) of a dispersing agent having (a) hydrophilic group(s) and (a) hydrophobic group(s). The thermally conductive compound has a high thermal conductivity and a plasticity in the range of temperatures of &minus;40 to 50&deg; C., and when it is interposed between an insulator body and a semiconductor element mounted thereon or between the semiconductor element and a cap, the heat generated by an operation of the semiconductor element is rapidly transferred and the thermal stress caused by the difference of coefficients of thermal expansion between the semiconductor element and the insulator body or cap is absorbed and relieved to cause no phase separation between them. The semiconductor device using the thermal compound, accordingly, is highly reliable.

Thermally conductive compound and semiconductor device using the same

An aluminous sintered product comprising 70 to 96% by weight of an alumina component and 4 to 30% by weight of additives, said additives including at least the one selected from oxides of elements of the Group 5a of periodic table and at least the one selected from oxides of metals of the iron family and oxides of manganese, titanium, calcium, magnesium, chromium and silica, and said aluminous sintered product exhibiting a volume resistivity of from 1.times.10.sup.7 to 1.times.10.sup.13 .OMEGA.-cm over a temperature range of from 25.degree. to 75.degree. C. and an absolute value of the temperature coefficient of volume resistivity of not larger than 1.8%/.degree.C. under the application of high voltages. The sintered product is used as antistatic part such as conveyer arm, handling jig, tweezers for holding wafers and the like that must not be electrostatically charged in an apparatus for producing semiconductors, and as resistance substrate, electrically conducting material, contact, heater, part in vacuum tubes, and part for electron guns in a CRT such as of TVs and the like.

Alumina sintered product

A dielectric ceramic composition having a high dielectric constant and a coefficient of thermal expansion nearly comparable with that of alumina, and a package for packaging semiconductor. The dielectric ceramic composition contains 0.1 to 0.6 parts by weight of manganese reckoned as an oxide per 100 parts by weight of chief components of the formula xTiO.sub.2 .cndot.yMgO.cndot.zSrO or of the formula xTiO.sub.2 .cndot.yMgO.cndot.zCaO wherein x, y and z are numerals that lie within given ranges. The package for packaging semiconductor comprises a package body composed of alumina and having a semiconductor-mounting portion, and a capacitor made up of a dielectric layer and an electrode layer provided on said semiconductor-mounting portion, wherein the dielectric layer is composed of the TiO.sub.2 --MgO--SrO--MnO.sub.2 -type dielectric ceramic or the TiO.sub.2 --MgO--CaO--MnO.sub.2 -type dielectric ceramic.

Dielectric ceramic composition and package made of the same composition

A package for a semiconductor device comprising (i) a high dielectric layer composed of an alumina particles, a high permittivity-imparting agent in particles selected from (a) W or Mo, (b) Re and (c) zirconia and a glass plase comprising alumina and at least one component selected from silica, alkaline earth metal components, and rare earth device components present in their grain boundaries, (ii) a pair of electrode layers comprising as a main component a metal selected from W and Mo provided on both sides of the high dielectric layer, and (iii) insulation layers composed of alumina particles and a glass phase composed of alumina and at least one component selected from silica, alkaline earth metal components and rare earth device components, the insulation layers being provided so as to sandwich the electrode layers and the dielectric layer.

Growing community of inventors

Kirishima, Japan

Kunihide Shikata