Sumitomo Metal Industries, Inc.

Sumitomo Sitix Corporation

Sumco Corporation

Kuniharu Inoue

Shuichi Inami

Manabu Moroishi

Jiro Inoue

Hisao Yamamoto

Katsunori Aikawa

Hazimu Ohnishi

Tsuguya Fukagawa

Nobuhiro Kusaba

The production efficiency of silicon single crystal produced by additional charge or recharge method is improved by avoiding loss due to undissolved portion of poly-silicon rod supplied in the additional charge or recharge. A poly-silicon rod as an additional charge is brought down in a silicon melt in a crucible , while being directly supported by a seed crystal . The poly-silicon rod is brought down to be totally supplied to the silicon melt , and then silicon single crystal is pulled using the seed crystal

Method of supplying silicon raw material, method of producing silicon single crystal, and poly-silicon

A method of loading a crucible, comprises loading at least one polycrystalline silicon rod into the crucible. Lump and/or granular polycrystalline silicon may also be loaded into the crucible. Especially when loaded into the crucible in a close-packed pyramidal configuration, a high loading density is achieved.

Method for producing silicon single crystal

Growing community of inventors

Amagasaki, Japan

Kuniharu Inoue