Sharp Kabushiki Kaisha Corporation

Sharp Kabushiki Saisha

Kuniaki Okada

Yukio Kurata

Hiroyuki Yamamoto

Yoshio Yoshida

Seiichi Uchida

Yorishige Ishii

Hideaki Fujita

Hiroshi Nakanishi

Kohji Minami

Toshiyuki Matsushima

Kouji Minami

Naoki Ueda

Yoshihiro Sekimoto

Keiji Sakai

Kazuya Kitamura

Toshihiro Tamura

Keisuke Yoshida

Renzaburo Miki

Yukiko Nagasaka

Takahiro Sasaki

Tetsuya Inui

Hiromi Katoh

Hirotsugu Matoba

Susumu Hirata

Minoru Ueda

Shingo Abe

Sumio Katoh

Shinya Yoshida

Atsushi Hachiya

Noboru Fujita

Renzaburou Miki

A display device in the present disclosure includes the following: a substrate; a plurality of source bus lines extending in a first direction above the substrate; a plurality of semiconductor layers extending in the first direction above the plurality of source bus lines; and a first groove-shaped recess extending in a second direction crossing the first direction, the first groove-shaped recess constituting a first contact hole extending from above the plurality of source bus lines to the plurality of source bus lines. Each of the plurality of semiconductor layers is disposed along a surface of the first groove-shaped recess so as to cross the first groove-shaped recess, and each of the plurality of semiconductor layers is electrically connected to each of the plurality of source bus lines on the bottom surface of the first groove-shaped recess.

Semiconductor device and display device

A display device for a head-mounted display includes a first display panel and a second display panel that are arranged in parallel. The first display panel and second display panel each include a pair of substrates having a plane sectioned into a display region and a non-display region, and a columnar spacer interposed between the substrates. The substrate includes a spacer lightproof portion placed over the spacer. The first display panel and second display panel do not coincide with each other with regard to a location where the spacer lightproof portion in the display region is disposed.

Display device for head-mounted display, and head-mounted display

A display device includes: an active matrix substrate including a plurality of pixels arrayed in a matrix shape, wherein the active matrix substrate includes, in each of the plurality of pixels, a TFT, an insulating layer substantially covering the TFT, a pixel electrode formed of a transparent conductive material and electrically connected to the TFT, a color filter located between the TFT and the pixel electrode, and an intermediate layer electrode formed of a transparent conductive material, at least partially located between the insulating layer and the color filter, and electrically connecting a drain electrode of the TFT to the pixel electrode, the pixel electrode is connected to the intermediate layer electrode at a contact hole formed in the color filter, and when viewed in a normal direction of a display surface, the contact hole at least partially overlaps a gate electrode of the TFT.

Display device

An array boardincludes a gate line, a TFT, a pixel electrode, a display pixel PX, and a second interlayer insulation film. The TFTincludes a gate electrodeformed from a part of the gate line, a channel sectionformed from an oxide semiconductor film, a source sectionconnected to one end of the channel section, and a drain sectionconnected to another end of the channel sectionand formed from the oxide semiconductor filmhaving resistance lower than the channel section. The pixel electrodeis connected to the drain section. The display pixel PX includes the TFTand the pixel electrode. The second interlayer insulation filmhas a second hole in a position overlapping the pixel electrode and the drain sectionand not overlapping the gate electrode

Thin film transistor substrate and display panel

A liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer, and a plurality of columnar spacers. The pixel arrangement is a stripe arrangement including red, green and blue pixel columns. The first substrate includes TFTs, one for each pixel, wherein each TFT includes an oxide semiconductor layer. The second substrate includes a color filter layer and a light-blocking layer. The light-blocking layer includes a plurality of first shading portions extending along the column direction, and a plurality of second shading portions extending along the row direction. Each of the columnar spacers is aligned with one of the second shading portions. At least one of the red, green and blue pixel columns has first pixel boundaries, where one of the second shading portions is present, and second pixel boundaries, where none of the second shading portions present, alternating with each other in the column direction, and the second shading portions are arranged in a staggered arrangement.

Liquid crystal display device

A first substrate of a display device includes a TFT provided for each pixel and including an oxide semiconductor layer. A second substrate includes a color filter layer and a light blocking layer. At least one of a first, second and third color filter included in the color filter layer has an average transmittance of 0.2% or less for visible light having a wavelength of 450 nm or less. In pixels provided with color filters having an average transmittance of 0.2% or less for visible light having a wavelength of 450 nm or less, the light blocking layer (a) includes a TFT shading portion extending along a channel length direction and having a width that is less than or equal to a length of the oxide semiconductor layer along a channel width direction; (b) includes a TFT shading portion extending along the channel width direction and having a width that is less than or equal to the length of the oxide semiconductor layer along the channel length direction; or (c) includes no TFT shading portion.

A semiconductor device (A) includes a thin film transistor (), an inter-layer insulation layer () covering the thin film transistor, and a transparent conductive layer () formed on the inter-layer insulation layer. The metal oxide layer () of the thin film transistor includes a first portion () overlapping the gate electrode () via a gate insulation layer () and a second portion () not overlapping the gate electrode (). The second portion () crosses a different edge (e) different from an edge (e) of the drain electrode () on a side of the first portion when viewed in the normal direction of the substrate (). The inter-layer insulation layer has a contact hole () disposed to overlap a part of the drain electrode () and at least a part of the second portion () of the metal oxide layer when viewed in the normal direction of the substrate. The transparent conductive layer () comes into contact with the drain electrode (), the second portion (), and the gate insulation layer () in the contact hole ().

Semiconductor device, display apparatus, and method of manufacturing semiconductor device

A semiconductor device () includes: a thin film transistor () including an oxide semiconductor layer () including a channel region, and a source contact region and a drain contact region arranged on opposite sides of the channel region; an insulating layer arranged so as to cover the oxide semiconductor layer (), the insulating layer having a contact hole (CH) through which the drain contact region is exposed; and a transparent electrode () to be in contact with the drain contact region in the contact hole (CH), wherein: as seen from a direction normal to the substrate, at least a part R of the drain contact region overlaps a gate electrode (); and on an arbitrary cross section that extends in a channel width direction across the at least part (R) of the drain contact region, a width of the oxide semiconductor layer () is greater than a width of the gate electrode (), and the gate electrode () is covered by the oxide semiconductor layer () with the gate insulating layer therebetween.

Semiconductor device and method for manufacturing semiconductor device

A first substrate () of a liquid crystal display device () includes a TFT () that includes an oxide semiconductor layer (a). A second substrate () includes a color filter layer () and a light-shielding layer (). The light-shielding layer has a first TFT light-shielding portion () for each row in at least a blue pixel column, and a second TFT light-shielding portion () every n rows (n represents an integer of 2 or more) in a pixel column in which at least one type of color filter other than blue color filters is provided, the second TFT light-shielding portion having a larger area than the first TFT light-shielding portion. A columnar spacer () is arranged so as not to overlap the first TFT light-shielding portion but to overlap the second TFT light-shielding portion.

A conductive element includes: a first conductive film; a second conductive film connected to the first conductive film; a first insulating film covering the first conductive film and disposed in a layer below the second conductive film, the first insulating film having a contact hole exposing at least an edge face of the first conductive film and thereby connecting the second conductive film to the first conductive film; a second insulating film disposed in a layer above the second insulating film so as to straddle the contact hole; and a third conductive film disposed in a layer above the second conductive film with the second insulating film between the second and third conductive films, the third conductive film having a conductive film opening that contains a location overlapping the edge face of the first conductive film in a plan view.

Conductive element and liquid crystal display element

Each pixel region of an active matrix substrate includes a thin-film transistor, an interlayer insulating layer that includes an organic insulating layer, a transparent connection layer formed on the interlayer insulating layer, an inorganic insulating layer formed on the transparent connection layer, and a pixel electrode formed on the inorganic insulating layer. The transparent connection layer contacts a drain electrode inside of a first contact hole formed in the interlayer insulating layer. The pixel electrode contacts the transparent connection layer inside of a second contact hole formed in the inorganic insulating layer. The first contact hole and the second contact hole do not overlap with one another when a substrate is viewed from a normal direction. Inside the first contact hole, a bottom surface and sidewalls of the first contact hole are covered by the transparent connection layer, the inorganic insulating layer, and the pixel electrode.

Active matrix substrate and method for producing same

A production method for a display panel according to the present invention is production method for a display panelincluding a display paneland a plurality of microlensesprovided on a light-incident side of the display panel, including: (a) a step of providing a display panel having a plurality of pixels in a matrix arrangement, wherein each of the plurality of pixels has a plurality of picture elements, including a first picture elementB transmitting first color light and a second picture elementR (G) transmitting second color light which is different from the first color light; (b) a step of forming a photocurable material layeron one of a pair of principal faces, being opposite to each other, of the display panel; (c) a step of exposing the photocurable material layer to light via the display panel, wherein the photocurable material layer is at least partially cured with light which has been transmitted through at least the first picture element; and (d) a step of removing an uncured portion of the photocurable material layer' having been exposed to light, thereby forming a plurality of microlenses

Method of producing micro-lens-carrying display panel and display unit and exposure system

In a micro-lens array substrate () that includes first and second micro-lens arrays () respectively having a plurality of lenses, the first micro-lens array () is sandwiched between two inorganic dielectric substrates (), and the second micro-lens array () is formed on one of the two inorganic dielectric substrates ().

Micro-lens array substrate and production method therefor, and projection type liquid crystal display unit using those

An optical component according to the present invention comprises a substrate, and at least one optical element obtained by processing at least one thick optical film provided on the substrate. The optical component has a plurality of surfaces substantially not parallel to a surface of the substrate.

Optical component and method for producing thick polyimide film

Provided is a method of manufacturing a microlens substrate capable of facilitating optical axis alignment and simplifying manufacturing processes by patterning a lens shape of a second microlens array using a first microlens array. The lens shape of the cylindrical second microlens array is patterned by irradiating the first microlens array with ultraviolet rays. Light emitted from a linear light source which is variable in its position is imaged on a focal surface of the first microlens array by a collimator lens and the first microlens array, and a resist layer formed by being coated on the focal surface is exposed. By performing exposure while changing the position of the linear light source, a resist pattern of a desired cylindrical shape can be obtained. Thereafter, etching is performed to transfer the shape of the resist pattern onto an intermediate glass layer, and recesses are buried with a high refractive index UV curable resin.

Growing community of inventors

Sakai, Japan

Kuniaki Okada