Kabushiki Kaisha Toshiba

Kuniaki Kumamaru

Hiroshi Naruse

Shin-ichi Taka

Kouji Kimura

Hitoshi Tsuji

Hiroshi Haraguchi

Yasuto Otani

The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.

Method of manufacturing a hetero bipolar transistor

Hetero bipolar transistor and method of manufacturing the same

The present invention provides a method of forming a thin film pattern with a trapezoidal cross section. In this method, a resist pattern with an inverted-trapezoidal cross section is formed on a thin film. Using the resist pattern with the inverted-trapezoidal cross section as a mask, the thin film is dry-etched. A resist pattern is left with the resist pattern used as a mask. The resist pattern has a trapezoidal cross section.

Method of forming a thin film pattern with a trapezoidal cross section

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Yokohama, Japan

Kuniaki Kumamaru