Sumitomo Electric Industries, Limited

Other

Kuniaki Ishihara

Hiromi Nakanishi

Takashi Kyono

Yohei Enya

Takao Nakamura

Takatoshi Ikegami

Hideyuki Ijiri

Tetsuya Kumano

Masaki Ueno

Hideki Yagi

Makoto Kiyama

Akihiro Hachigo

Katsumi Uesaka

Kenji Koyama

Hideki Matsubara

Hiroyuki Yoshinaga

Takahisa Yoshida

Yutaka Oonishi

An optical moduleaccording to an embodiment includes a plurality of laser diodes (LDs)to, a multiplexing optical systemcombining a plurality of laser beams from the respective plurality of LDs, and a packageaccommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.

Optical module and method for manufacturing the optical module

An optical module includes a light-forming part and a protective member. The light-forming part includes a base member, a semiconductor light-emitting device, a lens, and a light-receiving device mounted on the base member and disposed, in the emission direction of the semiconductor light-emitting device, between the semiconductor light-emitting device and the lens. The light-receiving surface of the light-receiving device inclines toward the emission portion of the semiconductor light-emitting device such that an inclination angle &#x3b8; is more than 0&#xb0; and 90&#xb0; or less, the inclination angle &#x3b8; being an angle formed between the optical axis of the semiconductor light-emitting device and a plane including the light-receiving surface of the light-receiving device.

Optical module that suppresses stray light

An optical moduleaccording to an embodiment includes a plurality of laser diodes (LDs)to, a multiplexing optical systemcombining a plurality of laser beams from the respective plurality of LDs, and a packageaccommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more thannm. The package has an internal moisture content of not more thanppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.

A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1&#xd7;10cm, and oxygen concentration of at most 5&#xd7;10cm. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.

Semiconductor device and method for manufacturing the same

A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.

Method of manufacturing GaN-based semiconductor device

A method for producing a semiconductor optical device, includes the steps of: forming a semiconductor region including a semiconductor layer on a substrate; preparing a mold including a pattern surface, the pattern surface including an arrangement of patterns each including first to n-th pattern portions; forming a first mask on the semiconductor region with the mold by a nano-imprint technique; forming first to n-th periodic structures in each of the device sections in the semiconductor region by using the first mask, the first to n-th periodic structures respectively corresponding to the first to n-th pattern portions; forming a second mask after the first mask is removed, the second mask including a first pattern on an i-th periodic structure (1&#x2266;i&#x2266;n) among the first to n-th periodic structures in a first section of the device sections and including a second pattern on a j-th periodic structure (1&#x2266;j&#x2266;n) among the first to n-th periodic structures in a second section of the device sections; and forming first and second stripe mesas in the first and second sections respectively by using the second mask.

Method for producing semiconductor optical device

A method to manufacture an optical device with enhanced high frequency performance is disclosed. The method includes steps of: (a) forming semiconductor layers on a semiconductor substrate, (b) etching the semiconductor layers by using a mask to form a plurality of diffraction gratings, where the mask provides a plurality of periodic patterns each corresponding to respective gratings and having a specific pitch different from others, (c) forming an active layer on the etched semiconductor layers, (d) measuring a maximum optical gain of the active layer, (e) selecting one of diffraction gratings based on the measured optical gain, and (f) forming a current confinement structure aligned with the selected diffraction grating.

Method to manufacture semiconductor device with optical grating

A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CFand O, where CFhas a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CFand O, where CFin this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CFand O, where CFin this step has the third partial pressure greater than the second partial pressure.

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Itami, Japan

Kuniaki Ishihara