Epileds Technologies, Inc.

Kung-Hsieh Hsu

Ming-Sen Hsu

Chun-Hung Chen

Chun-Yi Lee

Cheng-Yu Chiu

A growth method of aluminum gallium nitride is disclosed. The method includes the steps of: providing a substrate; forming a first aluminum gallium nitride layer on the substrate at a first temperature; and forming a second aluminum gallium nitride layer, on the first aluminum gallium nitride layer, at a second temperature. The first temperature is higher than the second temperature.

Growth method of aluminum gallium nitride

An UV light-emitting diode includes a patterned substrate, a template layer, a growth layer, a first n-type semiconductor layer, an intrinsic semiconductor layer, a second n-type semiconductor layer, a plurality of layers of multiple quantum wells, a barrier layer, a first electron blocking layer, a second electron blocking layer, a first p-type semiconductor layer and a second p-type semiconductor layer in sequence from a bottom layer to a top layer. Whereas the aforementioned layers all include Group III nitride materials and the number of layers for the plurality of layers of multiple quantum wells is at least five layers. Because the first n-type semiconductor layer, the first p-type semiconductor layer, and the plurality of layers of multiple quantum wells all contain aluminum, short-wavelength UV light is emitted when a current is applied.

UV light-emitting diode

A sapphire substrate with patterned structure includes a sapphire base; a plurality of the cavities formed on a surface of the sapphire base; and a template layer. The plurality of the cavities are periodically arranged at a predetermined distance from each other, and each of the plurality of the cavities has a bottom surface and a top opening. Each of the plurality of the cavities comprises at least a first and a second inclined surfaces, and the first and the second inclined surfaces are inclined by a first and a second angles respectively with respect to the bottom surface of the plurality of the cavities.

Sapphire substrate with patterned structure

A method for growing Group III nitride is provided, which includes the following steps. A plurality of notches separated from each other are formed at the epitaxial substrate surface via the pattering process. The plurality of notches each has at least one stepping structure with a predetermined inclination angle, wherein the stepping structure in each notch gradually descends towards the center of the corresponding notch. The Group III nitride is grown on the epitaxial substrate via epitaxy process. Wherein, the Group III nitride growing at an upper portion of the epitaxial substrate restricts the vertical growth of the Group III nitride growing at the lower portion of the epitaxial substrate, and the Group III nitride growing at the lower portion of the epitaxial substrate promotes the lateral growth of the Group III nitride growing at the upper portion of the epitaxial substrate.

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Tainan, Taiwan

Kung-Hsieh Hsu