Micron Technology Incorporated

Aptina Imaging Corporation

Other

Lodestar Licensing Group LLC

Micro Technology, Inc.

Kunal R Parekh

John K Zahurak

Kyle K Kirby

Li Li

Justin B Dorhout

Martin Ceredig Roberts

Mark Fischer

Zhiqiang (Jeff) Wu

Gurtej S Sandhu

Charles H Dennison

Chet E Carter

Phillip G Wald

David A Daycock

Jun Liu

Richard H Lane

H Montgomery Manning

Vinayak Shamanna

Ryan L Meyer

Thomas Arthur Figura

Paolo Tessariol

Mohd Kamran Akhtar

Mark E Jost

Suraj J Mathew

Matthew Park

David L Dickerson

Sarah A Niroumand

Glen Earl Hush

Alan R Reinberg

Sean Stephen Eilert

Jigish D Trivedi

Pai-Hung Pan

Kunal Shrotri

David K Hwang

Aliasger Tayeb Zaidy

Kin F Ma

Cem Basceri

Thomas M Graettinger

Yushi Hu

Joseph Neil Greeley

Chandra V Mouli

John David Hopkins

Akira Goda

Aaron S Yip

Fatma Arzum Simsek-Ege

William Arthur Stanton

Fei Wang

Jeffrey W Honeycutt

Byron Neville Burgess

Fawad Ahmed

Ian C Laboriante

Angela S Parekh

Sanh D Tang

Pierre C Fazan

Zhiping Yin

Philip J Ireland

Indra V Chary

Nancy M Lomeli

David S Becker

Paul J Schuele

Thomas R Glass

Jasper S Gibbons

Michael J Hermes

Young Pil Kim

Michael Willett

Fernando N Gonzalez

Werner Juengling

Haitao Liu

John A Smythe

Randhir P S Thakur

Nishant Sinha

Bret K Street

Chris M Carlson

Bhaskar Srinivasan

Hongbin Zhu

Anish A Khandekar

Steven M McDonald

Dimitrios Pavlopoulos

Beau D Barry

M Jared Barclay

Merri Lyn Carlson

Wei Zhou

Zhiqiang Xie

Saurabh Keshav

M Ceredig Roberts

Darren V Young

Kuo Chen Wang

Brent Keeth

Randhir P Thakur

Vishnu Kumar Agarwal

George Matamis

F Daniel Gealy

James Brian Johnson

Ceredig Roberts

Eiichi Nakano

Terrence B McDaniel

Steve V Cole

Amy R Griffin

Thy Tran

Surendranath C Eruvuru

A wafer-on-wafer bonded memory and logic device can enable high bandwidth transmission of data directly between a memory die and a logic die. Memory devices can be formed on a first wafer. First metal pads can be formed on the first wafer and coupled to the memory devices. The memory devices can be tested via the first metal pads. The first metal pads can be removed from the first wafer. Subsequently, second metal pads on the first wafer can be bonded, via a wafer-on-wafer bonding process, to third metal pads on a second wafer. Each memory device on the first wafer can be aligned with and coupled to a respective logic device on the second wafer.

Testing memory of wafer-on-wafer bonded memory and logic

Systems and methods for a semiconductor device having a front-end-of-line structure are provided. The semiconductor device may include a dielectric material having a backside formed on a front side of a semiconductor substrate material and a front side, and an interconnect structure extending through the dielectric material. The interconnect structure may be electrically connected to a semiconductor memory array proximate the front side of the dielectric material. The semiconductor device may further have an insulating material encasing at least a portion of the semiconductor memory array and an opening created during back-end-of-line processing through which the active contact surface at the backside of the interconnect structure is exposed for electrical connection.

Front end of line interconnect structures and associated systems and methods

Microelectronic devices with through-substrate interconnects and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate carrying first and second metallization layers. The second metallization layer is spaced apart from the semiconductor substrate with the first metallization layer therebetween. The semiconductor device also includes a conductive interconnect extending at least partially through the semiconductor substrate. The first metallization layer is in electrical contact with the conductive interconnect via the second metallization layer.

Microelectronic devices with through-substrate interconnects and associated methods of manufacturing

Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have the same majority carriers. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies.

Integrated assemblies and methods of forming integrated assemblies

A semiconductor device assembly includes a first semiconductor device having front and rear surfaces, a plurality of front-side pads disposed over the front surface at a first distance from the rear surface, and a plurality of additional device pads disposed over the front surface at a second distance from the rear surface greater than the first distance; a second semiconductor device in contact with a top side of each of the additional device pads; an encapsulant material at least partially surrounding the second semiconductor device and covering a top side of the front-side pads; a first plurality of TSVs, each extending from the rear surface through the first semiconductor device to a bottom side of one of the front-side pads; and a second plurality of TSVs, each extending from the rear surface through the first semiconductor device to a bottom side of corresponding one of the additional device pads.

Semiconductor device assemblies including TSVs of different lengths and methods of making the same

A memory device includes a memory die bonded to a logic die. A logic die that is bonded to a memory die via a wafer-on-wafer bonding process can receive signals indicative of input data from a global data bus of the memory die and through a bond of the logic die and memory die. The logic die can also receive signals indicative of kernel data from local input/output (LIO) lines of the memory die and through the bond. The logic die can perform a plurality of operations at a plurality of vector-vector (VV) units utilizing the signals indicative of input data and the signals indicative of kernel data.

Signal routing between memory die and logic die for performing operations

Systems and methods for a semiconductor device having a front-end-of-line interconnect structure are provided. The semiconductor device may include a dielectric material having a backside formed on a front side of a semiconductor or silicon substrate material and a front side, and a conducting material on the front side of the dielectric material. The conducting material may have a line portion and an interconnect structure electrically coupled to the line portion and separated from the front side of the substrate material by the dielectric material. The interconnect structure has a backside defining a contact surface. The semiconductor device may further include a semiconductor die proximate the front side of the dielectric material, an insulating material encasing at least a portion of the semiconductor die, and an opening through which the active contact surface at the backside of the interconnect structure is exposed for electrical connection.

A method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive material overlying the base structure, a stack structure overlying the doped semiconductive material, cell pillar structures vertically extending through the stack structure and the doped semiconductive material and into the base structure, and digit line structures vertically overlying the stack structure. An additional microelectronic device structure comprising control logic devices is formed. The microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. The base structure and portions of the cell pillar structures vertically extending into the base structure are removed to expose the doped semiconductive material. The doped semiconductive material is then patterned to form at least one source structure over the stack structure and coupled to the cell pillar structures. Microelectronic devices and electronic systems are also described.

Memory devices and related methods of forming a memory device

Methods, systems, and devices for memory with parallel main and test interfaces are described. A memory die may be configured with parallel interfaces that may individually (e.g., separately) support evaluation operations (e.g., before or as part of assembly in a multiple-die stack) or access operations (e.g., after assembly in a multiple die stack). For example, a memory die may include a first set of one or more contacts that support communicating signaling with or via another memory die in a multiple-die stack. The memory die may also include a second set of one or more contacts that support probing for pre-assembly evaluations, which may be electrically isolated from the first set of contacts. By implementing such parallel interfaces, evaluation operations may be performed using the second set of contacts without damaging the first set of contacts, which may improve capabilities for supporting a multiple-die stack in a memory device.

Memory with parallel main and test interfaces

A method of forming a microelectronic device comprises forming line structures comprising conductive material and insulative material overlying the conductive material, the line structures separated from one another by trenches. An isolation material is formed on surfaces of the line structures inside and outside of the trenches, the isolation material only partially filling the trenches to form air gaps interposed between the line structures. Openings are formed to extend through the isolation material and expose portions of the insulative material of the line structures. The exposed portions of the insulative material of the line structures are removed to form extended openings extending to the conductive material of the line structures. Conductive contact structures are formed within the extended openings. Conductive pad structures are formed on the conductive contact structures. Additional methods, microelectronic devices, memory devices, and electronic systems are also described.

Methods of forming microelectronic devices, and related electronic systems

A semiconductor device assembly is provided. The assembly includes a first semiconductor device including a plurality of electrical contacts on an upper surface thereof; a monolithic silicon structure having a lower surface in contact with the upper surface of the first semiconductor device, the monolithic silicon structure including a cavity extending from the lower surface completely through a body of the monolithic silicon structure to a top surface of the monolithic silicon structure; and a second semiconductor device disposed in the cavity, the second semiconductor device including a plurality of interconnects, each operatively coupled to a corresponding one of the plurality of electrical contacts.

Semiconductor device assemblies including monolithic silicon structures for thermal dissipation and methods of making the same

A microelectronic device comprises a memory array region, a control logic region, and an additional control logic region. The memory array region comprises a stack structure comprising vertically alternating conductive structures and insulating structures, and vertically extending strings of memory cells within the stack structure. The control logic region underlies the stack structure and comprises control logic devices configured to effectuate a portion of control operations for the vertically extending strings of memory cells. The additional control logic region overlies the stack structure and comprises additional control logic devices configured to effectuate an additional portion of the control operations for the vertically extending strings of memory cells. Methods of forming a microelectronic device, and additional microelectronic devices and electronic systems are also described.

3D NAND memory device devices and related electronic systems

Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. Vertically-extending monolithic channel material is adjacent the select device gate material and the conductive levels. The monolithic channel material contains a lower segment adjacent the select device gate material and an upper segment adjacent the conductive levels. A first vertically-extending region is between the lower segment of the monolithic channel material and the select device gate material. The first vertically-extending region contains a first material. A second vertically-extending region is between the upper segment of the monolithic channel material and the conductive levels. The second vertically-extending region contains a material which is different in composition from the first material.

Integrated structures

A semiconductor device having monolithic conductive columns, and associated systems and methods, are disclosed herein. The semiconductor device can include a semiconductor die and a molding material. The semiconductor die may have a semiconductor substrate, a conductive pad, an opening, a non-conductive liner, and a plug of non-conductive material. The conductive pad may be at a surface of the semiconductor substrate. The opening may extend through the semiconductor substrate from the conductive pad to a second surface and define a side wall. The liner may coat the side wall and the plug may fill the opening. A second opening may be formed through the semiconductor device and the opening and a conductive material plated therein. The molding material may be laterally adjacent to the semiconductor die.

Monolithic conductive columns in a semiconductor device and associated methods

Some embodiments include an integrated assembly having a conductive structure which includes a semiconductor material over a metal-containing material. A stack of alternating conductive levels and insulative levels is over the conductive structure. A partition extends through the stack. The partition has wall regions, and has corner regions where two or more wall regions meet. The conductive structure includes a first portion which extends directly under the corner regions, and includes a second portion which is directly under the wall regions and is not directly under the corner regions. The first portion has a first thickness of the semiconductor material and the second portion has a second thickness of the semiconductor material. The first thickness is greater than the second thickness. Some embodiments include methods of forming integrated assemblies.

Integrated assemblies having thicker semiconductor material along one region of a conductive structure than along another region, and methods of forming integrated assemblies

Growing community of inventors

Boise, ID, United States of America

Kunal R Parekh