Epistar Corporation

Yenrich Technology Corporation

Kunal Kashyap

Min-Hsun Hsieh

Hsin-Mao Liu

Yih-Hua Renn

Jui-Hung Yeh

Hung-Chi Wang

Zong-Xi Chen

Meng-Lun Tsai

Kun-Wei Kao

A light-emitting device includes a semiconductor stack, a first electrode, a second electrode, and a supporting layer. The semiconductor stack includes a first semiconductor layer including a first top surface and a bottom surface, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer and including a second top surface. The first electrode is located on the first top surface. The second electrode is located on the second top surface. The supporting layer includes a first thickness, and directly covers at least 80% of the bottom surface. In a top view, the semiconductor stack includes a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1. The supporting layer has a first thermal expansion coefficient smaller than 80 ppm/° C., and the supporting layer has a Young's modulus between 2˜10 GPa.

Light-emitting device

A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.

Sensing device, sensing apparatus and sensing system

Growing community of inventors

Hsinchu, Taiwan

Kunal Kashyap