Samsung Electronics Co., Ltd.

Kunal Girotra

Byoung-June Kim

Sung-Hoon Yang

Jong-Moo Huh

Kyu-Sik Cho

Joo-Hoo Choi

The present invention relates to a thin film transistor, a method thereof and an organic light emitting device including the thin film transistor. According to an embodiment of the present invention, the thin film transistor includes a substrate, a control electrode, an insulating layer, a first electrode and a second electrode, a first ohmic contact layer and a second ohmic contact layer, and a semiconductor layer. The control electrode is formed on the substrate, and the insulating layer is formed on the control electrode. The first and the second electrodes are formed on the insulating layer. The first ohmic contact layer and the second ohmic contact layer are formed on the first electrode and the second electrode. The semiconductor layer is formed on the first ohmic contact layer and the second ohmic contact layer to fill between the first and the second electrodes.

Thin film transistor, organic light emitting device including thin film transistor, and manufacturing method thereof

A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF) gas, a nitrogen trifluoride (NF) gas, SiF&#x2014;Hgas and a mixture thereof. Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrafluoride (SiF), hydrogen (H) and argon (Ar).

Growing community of inventors

Suwon-si, South Korea

Kunal Girotra