Applied Materials, Inc.

Asm IP Holding B.v.

Kunal Bhatnagar

Mohith E Verghese

Jose Alexandro Romero

Dmitrii Leshchev

Srinivas Gandikota

Seshadri Ganguli

Wei Ey Li

Mandyam Sriram

Yixiong Yang

Jacqueline S Wrench

Yong Yang

Ashwin Agathya Boochakravathy

Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

Enhancing gapfill performance of dram word line

Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

Low temperature deposition of pure molybdenum films

Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.

Methods for filling a gap feature on a substrate surface and related semiconductor structures

Low temperature deposition of pure molybenum films

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Chandler, AZ, United States of America

Kunal Bhatnagar