Sichuan Sunfor Light Co., Ltd

Nuctech Company Limited

Boe Technology Group Co., Ltd.

Chinese Academy of Sciences

Beijing Boe Technology Development Co., Ltd.

Zhuhai Juntian Electronic Technology Co., Ltd.

Google Inc.

Huawei Technologies Co., Limited

Tsinghua University

Motorola Mobility LLC

Northeastern University

Electricite De France

Shenyang Beiye Metallurgical Technology Co., Ltd.

Shenyang Beiye Metallurgigal Technology Co., Ltd

State Nuclear Security Technology Center

Kun Zhao

Ming Zhang

Zhengliang Li

Ce Ning

Hehe Hu

Ming Ruan

Jie Huang

Nianqi Yao

Jiayu He

Hongjie Zhang

Chengyu Li

Feifei Li

Dong-ming Li

Qi Qi

Hao Kai Zhang

Hua Peng

Yu He

Sen Wang

Fengjuan Liu

Liping Lei

Tianmin Zhou

Qiang Wang

Jin Ping Lin

Dongming Li

Xiaobing Wang

Yingrong Jian

Wei Liu

Yuanjing Li

Zhanfeng Cao

Qi Liu

Qingjun Zhang

Jianmin Li

Hao Zhang

Song Liu

Feng Guan

Jiaxiang Zhang

Li Zhang

Ming Gao Yao

Junli Li

Ke Wang

Nan Jiang

Xue Ping Liu

Jiushi Wang

Yangtian Zhang

Qitian Miao

Chun Li

Zhi Wang

James Ferrans

Yanli Deng

Wentao Long

Zhengyong Feng

Mian Yang

Craig J Detter

Yali Xie

Hong Jiang

Guoping Zhu

Mark T Ahlenius

Jianhua Li

Zhongpeng Tian

Jilong Zhang

Niangi Yao

Pei Huang

Zhenbei Yu

Huiling Liu

Jun Lv

Zhe Xin

Gaofeng Miao

Jiaqing Zhu

Shaobo Fang

Zhiyi Wei

Yitan Gao

Jicai Xu

Zhaohui Wu

Yeliang Han

Wanqiang Wang

Fanglei Chen

Wenzhu Tian

Xuemei Gao

Jingqiu Sun

Lidan Chen

Changjie Yang

Chunxuan Hu

Zengxue Jin

Li-Feng Liang

Zhidan Ma

Gaowa Tuya

Hanping Li

Wei Luo

Yuecheng Hu

Xueguang Lu

Beidou Liu

Zhi-Hua Fan

Naixiang Feng

Zhongqi Pu

Yuezhong Di

Jianping Peng

Yaowu Wang

Ming Yao

Xavier Yang

The present disclosure provides a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a circuit layer disposed on a base substrate, an emitting structure layer and a photoelectric structure layer disposed on a side of the circuit layer away from the base substrate, the circuit layer includes at least one impurity absorption layer and at least one transistor, the transistor includes an active layer, and at least one insulation layer is provided between the impurity absorption layer and the active layer; an atomic ratio of a silicon element to a nitrogen element in the impurity absorption layer is 1:5 to 1:35.

Display substrate and preparation method thereof, and display apparatus

Provided is a display substrate including a substrate and a plurality of light emitting units and a plurality of light detection units located on the substrate, At least one light emitting unit includes a light emitting element and a pixel circuit connected to the light emitting element, and at least one light detection unit includes an optical sensing element and a light emitting detecting circuit connected to the optical sensing element. At least one inorganic hydrogen barrier layer is arranged on one side of the optical sensing element close to the substrate. The light emitting element has a first light emitting region and a second light emitting region, the first light emitting region of the light emitting element emits light from a side away from the substrate, and the second light emitting region of the light emitting element emits light from a side close to the substrate.

Display substrate, manufacturing method thereof, and display apparatus

Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.

Thin film transistor, display substrate and display device

A circuit board includes a substrate, a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer includes a plurality of first conductive portions. The second conductive layer includes a plurality of second conductive portions. A second conductive portion passes through a first via hole in the first insulating layer to be in electrical contact with a first conductive portion. The first conductive layer and the second conductive layer each include at least one main conductive layer, which is capable of creating a first intermetallic compound with solder. At least one of the first conductive layer and the second conductive layer further includes a stop layer capable of creating a second intermetallic compound with the solder. A rate of a reaction between the stop layer and the solder is lower than a rate of a reaction between the main conductive layer and the solder.

Circuit board, light-emitting substrate, backlight module, and display apparatus

Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer; where a material of the oxidization protective layer includes tungsten.

Array substrate and display apparatus comprising oxidization protective layer on copper conductive layer

A thin film transistor includes a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer. The active layer includes a channel layer and at least one channel protection layer; a material of each of the channel layer and the at least one channel protection layer is a metal oxide semiconductor material. The at least one channel protection layer is a crystallizing layer, and metal elements of the at least one channel protection layer include non-rare earth metal elements including In, Ga, Zn and Sn.

Thin film transistor, semiconductor substrate and X-ray flat panel detector

The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

Thin-film transistor, manufacturing method thereof, array substrate and display panel

Provided is a device of detecting a ray dose adaptable for coupling with a terminal, including: a housing, a scintillator and a light shielding layer. The housing has an accommodating space and a window, the accommodating space is in communication with the window; the scintillator is configured to receive a ray and convert a received ray into a visible light, the scintillator is located in the accommodating space, the scintillator covers the window, an outer surface of the scintillator includes a first outer surface and a second outer surface, and the first outer surface is adapted to a camera of the terminal; and the light shielding layer is configured to shield a visible light in an external environment from illuminating on the scintillator, the light shielding layer is arranged on the second outer surface of the scintillator.

Device of detecting ray dose adaptable for coupling with terminal and method of detecting ray dose

The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

Thin film transistor and method for manufacturing the same, array substrate and display device

The present disclosure provides a gamma camera imaging method and a gamma camera imaging device. The method includes: selecting, from energy spectrums captured by a gamma camera on one or more radioactive materials, one or more energy ranges of each radioactive material among the one or more radioactive materials as one or more monitored energy regions of the radioactive material; performing image reconstruction on the monitored energy regions of each radioactive material among the one or more radioactive materials; performing normalization on images obtained through the image reconstruction; and performing superimposing on the normalized images to form a composite image.

Gamma camera imaging method and gamma camera imaging device

Disclosed are a light-emitting substrate and a display device. In the light-emitting substrate, a first pad of a light-emitting area includes a first metal layer located above a base substrate and a second metal layer located on a side, facing away from the base substrate, of the first metal layer. A material of the second metal layer includes copper-nickel-titanium alloy, and a quantity of nickel atoms and/or titanium atoms contained per unit area in a cross section, farther from the base substrate, of the second metal layer is greater than a quantity of nickel atoms and/or titanium atoms contained per unit area in another cross section, closer to the base substrate, of the second metal layer.

Light-emitting substrate and display device

An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

Array substrate, flat panel detector, and method for manufacturing array substrate

A first network device sends a border gateway protocol (BGP) message to a second network device. The BGP message includes Ethernet virtual private network network layer reachability information (EVPN NLRI) and first information. The first information indicates a first maximum rate at which the second network device sends traffic to the first network device based on the EVPN NLRI. When the second network device sends the traffic to the first network device based on the EVPN NLRI, a first-type rate is less than or equal to the first maximum rate. According to the method in this application, less public network bandwidth is occupied, and overheads of the network device can be reduced.

Message sending and receiving method, apparatus, and system

The present disclosure relates to an intelligent prevention passage control system for an electronic device, which comprises a detection device for an electronic device, a traffic control device integrated with the detection device for the electronic device, an industrial control host, a server, an access controller and a management terminal inside the traffic control device. The present disclosure can more accurately judge violations by scoring violations, and can make the system more intelligent by accurately judging violations, thus realizing no manual attendance, solving the problems of personnel recruitment, shift attendance and personnel management, and saving a lot of labor cost. At the same time, the system can avoid the hidden dangers caused by human feelings, sense of responsibility and inertia brought by manual prevention, and ensure the consistent, accurate and reliable standards of detection work.

Intelligent prevention passage control system for electronic device

Methods and devices are described for performing an all-phase measurement of an ultra-fast laser pulse having a spectral range of greater than one octave. The ultra-fast laser pulse may be split into a first beam comprising a fundamental light with a wavelength &#x3bb;and a second beam comprising a light with a wavelength 2&#x3bb;. The light with the wavelength 2&#x3bb;may be frequency doubled to a light with a wavelength &#x3bb;to generate an interference with the fundamental light. Fourier transform may be performed on an interference spectrum of the interference, and a relative envelope delay (RED) between the fundamental light and the frequency doubled light and a carrier envelope phase (CEP) may be acquired based on a result of the Fourier transform.

Methods and apparatus for measuring and locking ultra-fast laser pulses

Growing community of inventors

Beijing, China

Kun Zhao